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Large-scale photonic integrated circuits

IEEE journal of selected topics in quantum electronics, 2005-01, Vol.11 (1), p.50-65

2005

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Acceleration of gain recovery in semiconductor optical amplifiers by optical injection near transparency wavelength

IEEE photonics technology letters, 2002-01, Vol.14 (1), p.12-14

2002

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Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz

IEEE photonics technology letters, 2001-08, Vol.13 (8), p.842-844

2001

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Growth optimization for p-n junction placement in the integration of heterojunction bipolar transistors and quantum well modulators on InP

IEEE journal of selected topics in quantum electronics, 2000-01, Vol.6 (1), p.26-30

2000

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Temperature dependent loss and overflow effects in quantum well lasers

IEEE photonics technology letters, 1994-11, Vol.6 (11), p.1293-1296

1994

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Reduction of base-collector capacitance by undercutting the collector and subcollector in GaInAs/InP DHBTs

IEEE electron device letters, 1996-03, Vol.17 (3), p.97-99

1996

Volltextzugriff (PDF)

High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode

Electronics letters, 1991-11, Vol.27 (23), p.2125-2127

1991

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Polarization insensitive waveguide grating routers in InP

IEEE photonics technology letters, 1998-12, Vol.10 (12), p.1763-1765

1998

Volltextzugriff (PDF)

Nonequilibrium effects in quantum well lasers

Applied physics letters, 1992-11, Vol.61 (20), p.2383-2385

1992

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Frequency tuning characteristics and WDM channel access of the semiconductor three-branch Y3-lasers

IEEE photonics technology letters, 1994-02, Vol.6 (2), p.157-160

1994

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Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated waveguide lens for high-power applications

IEEE photonics technology letters, 1993-08, Vol.5 (8), p.916-919

1993

Volltextzugriff (PDF)

400 Gbit/s (10 channel × 40 Gbit/s) DWDM photonic integrated circuits

Electronics letters, 2005-03, Vol.41 (6), p.347-349

2005

Volltextzugriff (PDF)

GaInAs/GaInAsP strained quantum well monolithic electroabsorption modulator/amplifier by lateral bandgap control with nonplanar substrates

Electronics letters, 1993-11, Vol.29 (24), p.2104-2106

1993

Volltextzugriff (PDF)

Widely tunable (45 nm, 5.6 THz) multi-quantum-well three-branch Y3-lasers for WDM networks

IEEE photonics technology letters, 1993-08, Vol.5 (8), p.879-882

1993

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Carrier capture times in 1.5 μm multiple quantum well optical amplifiers

Applied physics letters, 1992-01, Vol.60 (1), p.9-11

1992

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Lasing transitions between self-localized barrier-state electrons and confined-state heavy holes in InGaAs-InGaAsP-InP multiple-quantum-well lasers

IEEE journal of quantum electronics, 1995-11, Vol.31 (11), p.1935-1940

1995

Volltextzugriff (PDF)

Asymmetric Y-branch tunable semiconductor laser with 1.0 THz tuning range

IEEE photonics technology letters, 1992-10, Vol.4 (10), p.1093-1095

1992

Volltextzugriff (PDF)

High-voltage (2.1 V) integrated InGaAs photogenerator

Electronics letters, 1997-04, Vol.33 (8), p.718-719

1997

Volltextzugriff (PDF)

Investigation of crosstalk performance of eight-channel p-i-n/HBT OEIC photoreceiver array modules

IEEE photonics technology letters, 1996-05, Vol.8 (5), p.682-684, Article 682

1996

Volltextzugriff (PDF)

Dynamics of frequency switching in tunable asymmetric Y-branch lasers

IEEE photonics technology letters, 1993-06, Vol.5 (6), p.625-627

1993

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High-performance avalanche photodiode with separate absorption grading and multiplication regions

Electronics letters, 1983-09, Vol.19 (20), p.818-820

1983

Volltextzugriff (PDF)

Measurement of chirp parameter in GaInAs/GaInAsP quantum well electroabsorption modulators by using intracavity modulation

IEEE photonics technology letters, 1993-12, Vol.5 (12), p.1389-1391

1993

Volltextzugriff (PDF)

InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region

Applied physics letters, 1990-12, Vol.57 (26), p.2841-2843

1990

Volltextzugriff (PDF)

Performance of an eight-channel p-i-n/HBT OEIC photoreceiver array module in an optically-preamplified WDM system experiment

IEEE photonics technology letters, 1996-12, Vol.8 (12), p.1689-1691

1996

Volltextzugriff (PDF)

GaInAs/InP pseudo-heterojunction bipolar transistors grown by MOVPE

Electronics letters, 1989-10, Vol.25 (22), p.1539-1540

1989

Volltextzugriff (PDF)

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Large-scale photonic integrated circuits

Acceleration of gain recovery in semiconductor optical amplifiers by optical injection near transparency wavelength

Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth product of 320 GHz

Growth optimization for p-n junction placement in the integration of heterojunction bipolar transistors and quantum well modulators on InP

Temperature dependent loss and overflow effects in quantum well lasers

Reduction of base-collector capacitance by undercutting the collector and subcollector in GaInAs/InP DHBTs

High quantum efficiency, long wavelength InP/InGaAs microcavity photodiode

Polarization insensitive waveguide grating routers in InP

Nonequilibrium effects in quantum well lasers

Frequency tuning characteristics and WDM channel access of the semiconductor three-branch Y3-lasers

Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated waveguide lens for high-power applications

400 Gbit/s (10 channel × 40 Gbit/s) DWDM photonic integrated circuits

GaInAs/GaInAsP strained quantum well monolithic electroabsorption modulator/amplifier by lateral bandgap control with nonplanar substrates

Widely tunable (45 nm, 5.6 THz) multi-quantum-well three-branch Y3-lasers for WDM networks

Carrier capture times in 1.5 μm multiple quantum well optical amplifiers

Lasing transitions between self-localized barrier-state electrons and confined-state heavy holes in InGaAs-InGaAsP-InP multiple-quantum-well lasers

Asymmetric Y-branch tunable semiconductor laser with 1.0 THz tuning range

High-voltage (2.1 V) integrated InGaAs photogenerator

Investigation of crosstalk performance of eight-channel p-i-n/HBT OEIC photoreceiver array modules

Dynamics of frequency switching in tunable asymmetric Y-branch lasers

High-performance avalanche photodiode with separate absorption grading and multiplication regions

Measurement of chirp parameter in GaInAs/GaInAsP quantum well electroabsorption modulators by using intracavity modulation

InP/InGaAs double heterojunction bipolar transistors grown by metalorganic vapor phase epitaxy with sulfur delta doping in the collector region

Performance of an eight-channel p-i-n/HBT OEIC photoreceiver array module in an optically-preamplified WDM system experiment

GaInAs/InP pseudo-heterojunction bipolar transistors grown by MOVPE

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