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Magnetic Memory Technology: Spin-transfer-Torque MRAM and Beyond

1st edition, 2020

Volltextzugriff (PDF)

Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6623-6628

2021

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Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process

IEEE electron device letters, 2022-10, Vol.43 (10), p.1661-1664

2022

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A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

IEEE transactions on magnetics, 2010-06, Vol.46 (6), p.2322-2327

2010

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A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1073-1079

2006

Volltextzugriff (PDF)

RF power characteristics of SiGe HBTs at cryogenic temperatures

IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1452-1458

2006

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CMOS technology for MS/RF SoC

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.557-566

2003

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Isolation on Si wafers by MeV proton bombardment for RF integrated circuits

IEEE transactions on electron devices, 2001-05, Vol.48 (5), p.928-934

2001

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Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETs

IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1340-1346

2006

Volltextzugriff (PDF)

A 6-F/sup 2/ bit cell design based on one transistor and two uneven magnetic tunnel junctions structure and low power design for MRAM

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1530-1538

2006

Volltextzugriff (PDF)

Wide operation margin of toggle mode switching for magnetic random access memory with preceding negative pulse writing scheme

Applied physics letters, 2006-03, Vol.88 (11), p.112501-112501-3

2006

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Low-frequency noise properties of dynamic-threshold (DT) MOSFET's

IEEE electron device letters, 1999-10, Vol.20 (10), p.532-534

1999

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Spin dynamics of unit cells in magnetic random access memory

IEEE transactions on magnetics, 2005-02, Vol.41 (2), p.879-882

2005

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Can Magnetic Memory (MRAM) Displace DRAM?

2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2019, p.1-1

Tang, Denny

2019

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Method of creating local semi-insulating regions on silicon wafers for device isolation and realization of high-Q inductors

IEEE electron device letters, 1998-12, Vol.19 (12), p.461-462

1998

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An 8kb spin-orbit-torque magnetic random-access memory

2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2021, p.1-2

2021

Volltextzugriff (PDF)

First Demonstration of Interface-Enhanced SAF Enabling 400°C-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels

2021 Symposium on VLSI Technology, 2021, p.1-2

2021

Volltextzugriff (PDF)

An Experimental Study on High-Frequency Substrate Noise Isolation in BiCMOS Technology

IEEE electron device letters, 2008-03, Vol.29 (3), p.255-258

2008

Volltextzugriff (PDF)

High power density, high efficiency 1W SiGe power HBT for 2.4GHz power amplifier applications

Solid-state electronics, 2008-05, Vol.52 (5), p.745-748

2008

Volltextzugriff (PDF)

CMOS technology for MS/RF SoC

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.557-566

2003

Volltextzugriff (PDF)

High power density, high efficiency 1 W SiGe power HBT for 2.4 GHz power amplifier applications

Solid-state electronics, 2008-05, Vol.52 (5), p.745-748

2008

Volltextzugriff (PDF)

Geometry Effect on SiGe Heterojunction Bipolar Transistor Unit Cell for 1 W High-Efficiency RF Power Amplifier Applications

Japanese Journal of Applied Physics, 2007-03, Vol.46 (3R), p.917

2007

Volltextzugriff (PDF)

Basic Electromagnetism

Magnetic Memory Technology, 2020, p.1-17

1, 2020

Volltextzugriff (PDF)

Magnetoresistance Effects

Magnetic Memory Technology, 2020, p.77-91

1, 2020

Volltextzugriff (PDF)

MRAM Applications and Production

Magnetic Memory Technology, 2020, p.241-276

1, 2020

Volltextzugriff (PDF)

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Magnetic Memory Technology: Spin-transfer-Torque MRAM and Beyond

Thermally Robust Perpendicular SOT-MTJ Memory Cells With STT-Assisted Field-Free Switching

Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology

A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs-from single electron emission to PBTI recovery transient

RF power characteristics of SiGe HBTs at cryogenic temperatures

CMOS technology for MS/RF SoC

Isolation on Si wafers by MeV proton bombardment for RF integrated circuits

Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETs

A 6-F/sup 2/ bit cell design based on one transistor and two uneven magnetic tunnel junctions structure and low power design for MRAM

Wide operation margin of toggle mode switching for magnetic random access memory with preceding negative pulse writing scheme

Low-frequency noise properties of dynamic-threshold (DT) MOSFET's

Spin dynamics of unit cells in magnetic random access memory

Can Magnetic Memory (MRAM) Displace DRAM?

Method of creating local semi-insulating regions on silicon wafers for device isolation and realization of high-Q inductors

An 8kb spin-orbit-torque magnetic random-access memory

First Demonstration of Interface-Enhanced SAF Enabling 400°C-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels

An Experimental Study on High-Frequency Substrate Noise Isolation in BiCMOS Technology

High power density, high efficiency 1W SiGe power HBT for 2.4GHz power amplifier applications

CMOS technology for MS/RF SoC

High power density, high efficiency 1 W SiGe power HBT for 2.4 GHz power amplifier applications

Geometry Effect on SiGe Heterojunction Bipolar Transistor Unit Cell for 1 W High-Efficiency RF Power Amplifier Applications

Basic Electromagnetism

Magnetoresistance Effects

MRAM Applications and Production

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