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High-power AlGaN/GaN HEMTs for Ka-band applications

IEEE electron device letters, 2005-11, Vol.26 (11), p.781-783

2005

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IEEE_Xplore

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

IEEE electron device letters, 2006-09, Vol.27 (9), p.713-715

2006

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IEEE_Xplore

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

IEEE electron device letters, 2006-01, Vol.27 (1), p.13-15

2006

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IEEE_Xplore

High-power LEDs using Ga-doped ZnO current-spreading layers

Electronics letters, 2016-02, Vol.52 (4), p.304-306

2016

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Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2008-03, Vol.310 (6), p.1124-1131

2008

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Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

Journal of crystal growth, 2016-12, Vol.455, p.105-110

2016

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High-performance E-mode AlGaN/GaN HEMTs

IEEE electron device letters, 2006-06, Vol.27 (6), p.428-430

2006

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IEEE_Xplore

The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

IEEE electron device letters, 2009-03, Vol.30 (3), p.209-212

2009

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IEEE_Xplore

AlGaN/AlN/GaN high-power microwave HEMT

IEEE electron device letters, 2001-10, Vol.22 (10), p.457-459

2001

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IEEE_Xplore

Stable vicinal step orientations in m-plane GaN

Journal of crystal growth, 2015-02, Vol.411 (C), p.56-62

2015

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Effect of ohmic contacts on buffer leakage of GaN transistors

IEEE electron device letters, 2006-07, Vol.27 (7), p.529-531

2006

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IEEE_Xplore

V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation

IEEE electron device letters, 2008-11, Vol.29 (11), p.1184-1186

2008

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IEEE_Xplore

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

IEEE electron device letters, 2004-01, Vol.25 (1), p.7-9

2004

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IEEE_Xplore

Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.552-559

2001

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IEEE_Xplore

A quantum-well-intermixing process for wavelength-agile photonic integrated circuits

IEEE journal of selected topics in quantum electronics, 2002-07, Vol.8 (4), p.863-869

2002

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IEEE_Xplore

Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.562-565

2006

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IEEE_Xplore

Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates

IEEE electron device letters, 2009-04, Vol.30 (4), p.328-330

2009

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IEEE_Xplore

Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

IEEE electron device letters, 2006-04, Vol.27 (4), p.214-216

2006

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IEEE_Xplore

Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes

Journal of crystal growth, 2010-12, Vol.313 (1), p.1-7

2010

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Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer

Journal of crystal growth, 2004-12, Vol.273 (1), p.38-47

2004

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Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs

IEEE electron device letters, 2009-04, Vol.30 (4), p.313-315

2009

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IEEE_Xplore

Electroluminescence enhancement of ( 11 2 ¯ 2 ) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates

Current Applied Physics, 2011, 11(3), , pp.954-958

2011

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N-Face Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

IEEE electron device letters, 2008-10, Vol.29 (10), p.1101-1104

2008

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IEEE_Xplore

RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate

IEEE electron device letters, 2009-06, Vol.30 (6), p.584-586

2009

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IEEE_Xplore

High breakdown GaN HEMT with overlapping gate structure

IEEE electron device letters, 2000-09, Vol.21 (9), p.421-423

2000

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IEEE_Xplore

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High-power AlGaN/GaN HEMTs for Ka-band applications

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

High-power LEDs using Ga-doped ZnO current-spreading layers

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

High-performance E-mode AlGaN/GaN HEMTs

The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

AlGaN/AlN/GaN high-power microwave HEMT

Stable vicinal step orientations in m-plane GaN

Effect of ohmic contacts on buffer leakage of GaN transistors

V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation

High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation

Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB

A quantum-well-intermixing process for wavelength-agile photonic integrated circuits

Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates

Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment

Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes

Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer

Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs

Electroluminescence enhancement of ( 11 2 ¯ 2 ) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates

N-Face Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier

RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate

High breakdown GaN HEMT with overlapping gate structure

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