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Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes

Applied physics letters, 2018-01, Vol.112 (4)

2018

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Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

Semiconductor science and technology, 2012-02, Vol.27 (2), p.024001

2012

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AlGaN/GaN high electron mobility transistors with InGaN back-barriers

IEEE electron device letters, 2006-01, Vol.27 (1), p.13-15

2006

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High-power AlGaN/GaN HEMTs for Ka-band applications

IEEE electron device letters, 2005-11, Vol.26 (11), p.781-783

2005

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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

IEEE electron device letters, 2006-09, Vol.27 (9), p.713-715

2006

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Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2008-03, Vol.310 (6), p.1124-1131

2008

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Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

Applied physics letters, 2004-02, Vol.84 (6), p.855-857

2004

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High-performance E-mode AlGaN/GaN HEMTs

IEEE electron device letters, 2006-06, Vol.27 (6), p.428-430

2006

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Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells

Applied physics letters, 2015-11, Vol.107 (21)

2015

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High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

Journal of applied physics, 2015-01, Vol.117 (2)

2015

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Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well

Applied physics letters, 2014-03, Vol.104 (11)

2014

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Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

Semiconductor science and technology, 2016-06, Vol.31 (7), p.75008

2016

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Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

Applied physics letters, 2014-09, Vol.105 (11)

2014

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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

Applied physics letters, 2000-07, Vol.77 (2), p.250-252

2000

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Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN

Applied physics letters, 2013-12, Vol.103 (23)

2013

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The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

IEEE electron device letters, 2009-03, Vol.30 (3), p.209-212

2009

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AlGaN/AlN/GaN high-power microwave HEMT

IEEE electron device letters, 2001-10, Vol.22 (10), p.457-459

2001

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Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction

Applied physics letters, 2005-09, Vol.87 (10), p.101107-101107-3

2005

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Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies

Semiconductor science and technology, 2021-12, Vol.36 (12), p.123001

2021

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Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

IEEE electron device letters, 2012-05, Vol.33 (5), p.658-660

2012

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Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates

IEEE electron device letters, 2009-04, Vol.30 (4), p.328-330

2009

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Progress in the growth of nonpolar gallium nitride

Physica Status Solidi (b), 2007-08, Vol.244 (8), p.2847-2858

2007

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Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer

Journal of crystal growth, 2004-12, Vol.273 (1), p.38-47

2004

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Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes

Applied physics letters, 2022-10, Vol.121 (18)

2022

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Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

High-power AlGaN/GaN HEMTs for Ka-band applications

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

High-performance E-mode AlGaN/GaN HEMTs

Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates

Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells

High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well

Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN

The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

AlGaN/AlN/GaN high-power microwave HEMT

Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction

Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies

Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates

Progress in the growth of nonpolar gallium nitride

Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer

Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes

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