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Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes

Applied physics letters, 2018-01, Vol.112 (4)

2018

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Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

Semiconductor science and technology, 2012-02, Vol.27 (2), p.024001

2012

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High-power AlGaN/GaN HEMTs for Ka-band applications

IEEE electron device letters, 2005-11, Vol.26 (11), p.781-783

2005

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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

IEEE electron device letters, 2006-09, Vol.27 (9), p.713-715

2006

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Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2008-03, Vol.310 (6), p.1124-1131

2008

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Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

Applied physics letters, 2004-02, Vol.84 (6), p.855-857

2004

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High-performance E-mode AlGaN/GaN HEMTs

IEEE electron device letters, 2006-06, Vol.27 (6), p.428-430

2006

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Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells

Applied physics letters, 2015-11, Vol.107 (21)

2015

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High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

Journal of applied physics, 2015-01, Vol.117 (2)

2015

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Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well

Applied physics letters, 2014-03, Vol.104 (11)

2014

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Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

Semiconductor science and technology, 2016-06, Vol.31 (7), p.75008

2016

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Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

Applied physics letters, 2014-09, Vol.105 (11)

2014

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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

Applied physics letters, 2000-07, Vol.77 (2), p.250-252

2000

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Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN

Applied physics letters, 2013-12, Vol.103 (23)

2013

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AlGaN/AlN/GaN high-power microwave HEMT

IEEE electron device letters, 2001-10, Vol.22 (10), p.457-459

2001

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Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction

Applied physics letters, 2005-09, Vol.87 (10), p.101107-101107-3

2005

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The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

IEEE electron device letters, 2009-03, Vol.30 (3), p.209-212

2009

Volltextzugriff (PDF)

Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies

Semiconductor science and technology, 2021-12, Vol.36 (12), p.123001

2021

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Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

IEEE electron device letters, 2012-05, Vol.33 (5), p.658-660

2012

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Progress in the growth of nonpolar gallium nitride

Physica Status Solidi (b), 2007-08, Vol.244 (8), p.2847-2858

2007

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Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer

Journal of crystal growth, 2004-12, Vol.273 (1), p.38-47

2004

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Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates

IEEE electron device letters, 2009-04, Vol.30 (4), p.328-330

2009

Volltextzugriff (PDF)

Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes

Applied physics letters, 2022-10, Vol.121 (18)

2022

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Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces

Applied physics letters, 1993-12, Vol.63 (23), p.3203-3205

1993

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Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

High-power AlGaN/GaN HEMTs for Ka-band applications

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

High-performance E-mode AlGaN/GaN HEMTs

Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates

Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells

High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well

Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

Influence of growth temperature and temperature ramps on deep level defect incorporation in m -plane GaN

AlGaN/AlN/GaN high-power microwave HEMT

Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction

The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs

Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies

Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs

Progress in the growth of nonpolar gallium nitride

Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer

Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates

Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes

Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces

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