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Longitudinal study of medical downgrades in the Royal Air Force

BMJ military health, 2023-06, Vol.169 (3), p.249-255

2023

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561 Outcome of Patients Undergoing Neck of Femur Fracture Surgery During COVID Period

British journal of surgery, 2021-05, Vol.108 (Suppl 2)

2021

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Prevalence of efflux activity in low-level macrolide-resistant Campylobacter species

Journal of antimicrobial chemotherapy, 2007-02, Vol.59 (2), p.327-328

2007

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Use of selective annealing for growing very large grain silicon on insulator films

Applied physics letters, 1982-08, Vol.41 (4), p.346-347

1982

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Stacked transistors CMOS (ST-MOS), an NMOS technology modified to CMOS

IEEE transactions on electron devices, 1982-04, Vol.29 (4), p.585-589

1982

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Grain Size and Resistivity of LPCVD Polycrystalline Silicon Films

Journal of the Electrochemical Society, 1981-09, Vol.128 (9), p.2009-2014

1981

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Stacked Transistors CMOS (ST-MOS), an NMOS Technology Modified to CMOS

IEEE journal of solid-state circuits, 1982-04, Vol.17 (2), p.215-219

1982

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A high density CMOS inverter with stacked transistors

IEEE electron device letters, 1981-10, Vol.2 (10), p.250-251

1981

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Segregation of Arsenic to the Grain Boundaries in Polycrystalline Silicon

Journal of the Electrochemical Society, 1980-10, Vol.127 (10), p.2227-2229

1980

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Inversion layer at the interface of Schottky diodes

Solid-state electronics, 1974-01, Vol.17 (8), p.825-833

1974

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Inversion layers in abrupt p- n junctions

Solid-state electronics, 1970-01, Vol.13 (6), p.717-726

1970

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The Use of Selective Annealing for Growing Very Large Grains in Silicon on Insulator Films

Japanese Journal of Applied Physics, 1983-01, Vol.22 (S1), p.205

1983

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Transistors made in single-crystal SOI films

IEEE electron device letters, 1983-04, Vol.4 (4), p.75-77

1983

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Inversion layers in abrupt heterojunctions

Physica status solidi. A, Applied research, 1971-08, Vol.6 (2), p.487-497

1971

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ST-CMOS (Stacked Transistors CMOS): A double-poly-NMOS-compatible CMOS technology

1981 International Electron Devices Meeting, 1981, p.557-560

1981

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Comparison between PIXE and flame spectroscopy for trace analysis in human albumins

Nuclear instruments & methods, 1981-01, Vol.181 (1), p.259-261

1981

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Field-effect in large grain polysilicon transistors

1982 International Electron Devices Meeting, 1982, p.444-447

1982

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TRANSISTORS MADE IN SINGLE-CRYSTAL SOI FILMS

Le Journal de Physique Colloques, 1983-10, Vol.44 (C5), p.C5-C5-413

1983

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Formation of Torus-Unstable Flux Ropes and Electric Currents in Erupting Sigmoids

The Astrophysical journal, 2010-01, Vol.708 (1), p.314-333

2010

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Stacked transitors CMOS /ST-MOS/, and NMOS technology modified to CMOS

IEEE transactions on electron devices, 1982-04, Vol.ED-29, p.585-589

1982

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In Vivo Documentation of Stimulus Velocity Tuning of Mechanically Induced Reflex Cough

Physiological research, 2020-03, Vol.69 (Suppl 1), p.S139-S145

2020

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Fluvial archives, a valuable record of vertical crustal deformation

Quaternary science reviews, 2017-06, Vol.166, p.10-37

2017

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The standard flare model in three dimensions: III. Slip-running reconnection properties

Astronomy and astrophysics (Berlin), 2013-07, Vol.555, p.np-np

2013

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A susceptibility-based rainfall threshold approach for landslide occurrence

Natural hazards and earth system sciences, 2019-04, Vol.19 (4), p.775-789

2019

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Estimation of the squashing degree within a three-dimensional domain

Astronomy and astrophysics (Berlin), 2012-05, Vol.541, p.A78

2012

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Longitudinal study of medical downgrades in the Royal Air Force

561 Outcome of Patients Undergoing Neck of Femur Fracture Surgery During COVID Period

Prevalence of efflux activity in low-level macrolide-resistant Campylobacter species

Use of selective annealing for growing very large grain silicon on insulator films

Stacked transistors CMOS (ST-MOS), an NMOS technology modified to CMOS

Grain Size and Resistivity of LPCVD Polycrystalline Silicon Films

Stacked Transistors CMOS (ST-MOS), an NMOS Technology Modified to CMOS

A high density CMOS inverter with stacked transistors

Segregation of Arsenic to the Grain Boundaries in Polycrystalline Silicon

Inversion layer at the interface of Schottky diodes

Inversion layers in abrupt p- n junctions

The Use of Selective Annealing for Growing Very Large Grains in Silicon on Insulator Films

Transistors made in single-crystal SOI films

Inversion layers in abrupt heterojunctions

ST-CMOS (Stacked Transistors CMOS): A double-poly-NMOS-compatible CMOS technology

Comparison between PIXE and flame spectroscopy for trace analysis in human albumins

Field-effect in large grain polysilicon transistors

TRANSISTORS MADE IN SINGLE-CRYSTAL SOI FILMS

Formation of Torus-Unstable Flux Ropes and Electric Currents in Erupting Sigmoids

Stacked transitors CMOS /ST-MOS/, and NMOS technology modified to CMOS

In Vivo Documentation of Stimulus Velocity Tuning of Mechanically Induced Reflex Cough

Fluvial archives, a valuable record of vertical crustal deformation

The standard flare model in three dimensions: III. Slip-running reconnection properties

A susceptibility-based rainfall threshold approach for landslide occurrence

Estimation of the squashing degree within a three-dimensional domain

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