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Sales bêtes ! Mauvaises herbes: Nuisible », une notion en débat

Luglia, Rémi

2018

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Excess noise in carbon nanotube devices

Noise and Fluctuations (AIP Conference Proceedings Volume 922), 2007, Vol.922, p.261-266

2007

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Noise correlation measurements in bipolar transistors. I. Theoretical expressions and extracted current spectral densities

Journal of applied physics, 1997-03, Vol.81 (6), p.2651-2657

1997

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Parameter extraction of heterojunction bipolar transistor from low-frequency noise and S-parameter measurements

Semiconductor science and technology, 2007-05, Vol.22 (5), p.492-496

2007

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Impact of Technological Parameters on the Low Frequency Noise of Advanced Heterojunction Bipolar Transistors

Noise and Fluctuations (AIP Conference Proceedings Volume 922), 2007, Vol.922, p.77-82

2007

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1 ∕ f noise and percolation in carbon nanotube random networks

Applied physics letters, 2007-02, Vol.90 (8), p.082107-082107-3

2007

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Analysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors

Journal of applied physics, 2003-04, Vol.93 (7), p.4246-4252, Article 4246

2003

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Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1800-1806

2005

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EXCESS LOW FREQUENCY NOISE IN SINGLE-WALL CARBON NANOTUBE

Fluctuation and noise letters, 2006-03, Vol.6 (1), p.L45-L55

2006

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Impact of carbon concentration on 1 ∕ f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors

Journal of applied physics, 2008-06, Vol.103 (11), p.114508-114508-10

2008

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Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures

IEEE transactions on electron devices, 1994-11, Vol.41 (11), p.2000-2005

1994

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Low Frequency Noise in Contacted Single-Wall Carbon Nanotube

AIP Conference Proceedings, 2005, Vol.780 (1), p.462-465

2005

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Characterization of polysilicon bipolar transistors by low-frequency noise and correlation noise measurements

Semiconductor science and technology, 2001-04, Vol.16 (4), p.233-238

2001

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Comparison of low frequency noise and high frequency performances of double and simple polysilicon Bi-CMOS BJT

Microelectronics and reliability, 2000-11, Vol.40 (11), p.1869-1874

2000

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Influence of geometry and passivation on noise in GaInP/GaAs heterojunction bipolar transistors

Journal of applied physics, 1998-09, Vol.84 (5), p.2735-2739

1998

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Low Frequency Noise of InP/InGaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics, 2001, Vol.40 (2R), p.525-529, Article 525

2001

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Generation-recombination noise analysis in heavily doped p -type GaAs transmission line models

Journal of applied physics, 1996-03, Vol.79 (6), p.3046-3052

1996

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Influence of a base epitaxial regrowth on first order and low frequency noise measurements on GaInP/GaAs HBTs

Semiconductor science and technology, 1998-10, Vol.13 (10), p.1180-1186

1998

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Low frequency noise in p+-GaAs resistors

Electronics letters, 1993, Vol.29 (17), p.1571-1573

1993

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Dc and Low Frequency Noise analysis of hot-carrier induced degradation of low complexity 0.13 µm CMOS bipolar transistors, Microelectronics Reliability

Microelectronics and reliability, 2005, Vol.45, p.1800-1806

2005

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Comparison of low-frequency noise in III–V and Si∕SiGe HBTs

IEE proceedings. Circuits, devices, and systems, 2004-04, Vol.151 (2), p.138

2004

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Noise correlation measurements in bipolar transistors. II. Correlation between base and collector currents

Journal of applied physics, 1997-03, Vol.81 (6), p.2658-2664

1997

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Low-frequency noise in III–V high-speed devices

IEE proceedings. Circuits, devices, and systems, 2002-02, Vol.149 (1), p.59-67

2002

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Expressions de la fluidit d'un liquide en fonction de son volume molaire

Rheologica acta, 1977-09, Vol.16 (5), p.523-526

1977

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Effective electric field in the n-type moderately doped region of silicon devices at 300 K

Physica status solidi. B. Basic research, 1983-05, Vol.117 (1), p.K23-K26

1983

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Sales bêtes ! Mauvaises herbes: Nuisible », une notion en débat

Excess noise in carbon nanotube devices

Noise correlation measurements in bipolar transistors. I. Theoretical expressions and extracted current spectral densities

Parameter extraction of heterojunction bipolar transistor from low-frequency noise and S-parameter measurements

Impact of Technological Parameters on the Low Frequency Noise of Advanced Heterojunction Bipolar Transistors

1 ∕ f noise and percolation in carbon nanotube random networks

Analysis of 1/f noise current sources in InP/InGaAs heterojunction bipolar transistors

Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistors

EXCESS LOW FREQUENCY NOISE IN SINGLE-WALL CARBON NANOTUBE

Impact of carbon concentration on 1 ∕ f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors

Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures

Low Frequency Noise in Contacted Single-Wall Carbon Nanotube

Characterization of polysilicon bipolar transistors by low-frequency noise and correlation noise measurements

Comparison of low frequency noise and high frequency performances of double and simple polysilicon Bi-CMOS BJT

Influence of geometry and passivation on noise in GaInP/GaAs heterojunction bipolar transistors

Low Frequency Noise of InP/InGaAs Heterojunction Bipolar Transistors

Generation-recombination noise analysis in heavily doped p -type GaAs transmission line models

Influence of a base epitaxial regrowth on first order and low frequency noise measurements on GaInP/GaAs HBTs

Low frequency noise in p+-GaAs resistors

Dc and Low Frequency Noise analysis of hot-carrier induced degradation of low complexity 0.13 µm CMOS bipolar transistors, Microelectronics Reliability

Comparison of low-frequency noise in III–V and Si∕SiGe HBTs

Noise correlation measurements in bipolar transistors. II. Correlation between base and collector currents

Low-frequency noise in III–V high-speed devices

Expressions de la fluidit d'un liquide en fonction de son volume molaire

Effective electric field in the n-type moderately doped region of silicon devices at 300 K

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