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Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice

Journal of applied physics, 2012-09, Vol.112 (6)

2012

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Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe

Journal of electronic materials, 2013-11, Vol.42 (11), p.3108-3113

2013

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Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry–Pérot optical filters

Journal of micromechanics and microengineering, 2005-03, Vol.15 (3), p.608-614

2005

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Monolithic integration of an infrared photon detector with a MEMS-based tunable filter

IEEE electron device letters, 2005-12, Vol.26 (12), p.888-890

2005

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Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films

Smart materials and structures, 2006-02, Vol.15 (1), p.S29-S38

2006

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Design and Characterization of Fabry–Pérot MEMS-Based Short-Wave Infrared Microspectrometers

Journal of electronic materials, 2008-12, Vol.37 (12), p.1811-1820

2008

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Nanoscratch-induced phase transformation of monocrystalline Si

Scripta materialia, 2010-10, Vol.63 (8), p.847-850

2010

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Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2006-11, Vol.435, p.453-459

2006

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Electron magnetoresistance mobility in silicon-on-insulator layers using Kelvin’s technique

Solid-state electronics, 2010-09, Vol.54 (9), p.1047-1050

2010

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Photostriction actuation of silicon-germanium bilayer cantilevers

Journal of applied physics, 2019-03, Vol.125 (12)

2019

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A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe

Journal of electronic materials, 2010-07, Vol.39 (7), p.1019-1022

2010

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Tunable Fabry-Pérot cavities fabricated from PECVD silicon nitride employing zinc sulphide as the sacrificial layer

Journal of micromechanics and microengineering, 2001-09, Vol.11 (5), p.589-594

2001

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Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors

Journal of applied physics, 2000-04, Vol.87 (8), p.3900-3904

2000

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MWIR HgCdTe Photodiodes based on high-density plasma-induced type conversion

Semiconductor science and technology, 2008-09, Vol.23 (9), p.095027

2008

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Investigation of 1/f noise mechanisms in midwave infrared HgCdTe gated photodiodes

Journal of electronic materials, 2007-08, Vol.36 (8), p.884-889

2007

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Nanoscratch-induced deformation of single crystal silicon

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-05, Vol.27 (3), p.1374-1377

2009

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Effect of high-density plasma process parameters on carrier transport properties in p-to-n type converted Hg0.7Cd0.3Te layer

Journal of electronic materials, 2007-08, Vol.36 (8), p.913-918

2007

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Dark currents in long wavelength infrared HgCdTe gated photodiodes

Journal of electronic materials, 2004-06, Vol.33 (6), p.621-629

2004

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Incorporation and activation of arsenic in MBE-grown HgCdTe

Semiconductor science and technology, 2008-01, Vol.23 (1), p.015014

2008

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Preparation and Characterization of Cerium Substituted Bismuth Dysprosium Iron Garnets for Magneto-Optic Applications

IEEE transactions on magnetics, 2016-07, Vol.52 (7), p.1-4

2016

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Process Control of Cantilever Deflection for Sensor Application Based on Optical Waveguides

Journal of microelectromechanical systems, 2013-06, Vol.22 (3), p.569-579

2013

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Mercury cadmium telluride/cadmium telluride distributed Bragg reflectors for use with resonant cavity-enhanced detectors

Journal of electronic materials, 2005-06, Vol.34 (6), p.710-715

2005

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Diffusion length measurements in p-HgCdTe using laser beam induced current

Journal of electronic materials, 2001-06, Vol.30 (6), p.696-703

2001

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Characterization of low-temperature bulk micromachining of silicon using an SF 6 /O 2 inductively coupled plasma

Journal of micromechanics and microengineering, 2012-09, Vol.22 (9), p.95005

2012

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Contribution of hole trap to persistent photoconductivity in n -type GaN

Journal of applied physics, 2004-07, Vol.96 (2), p.1019-1023

2004

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Mechanisms of infrared photoluminescence in HgTe/HgCdTe superlattice

Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe

Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry–Pérot optical filters

Monolithic integration of an infrared photon detector with a MEMS-based tunable filter

Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films

Design and Characterization of Fabry–Pérot MEMS-Based Short-Wave Infrared Microspectrometers

Nanoscratch-induced phase transformation of monocrystalline Si

Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films

Electron magnetoresistance mobility in silicon-on-insulator layers using Kelvin’s technique

Photostriction actuation of silicon-germanium bilayer cantilevers

A Study of Sidewall Effects in HgCdTe Photoconductors Passivated with MBE-Grown CdTe

Tunable Fabry-Pérot cavities fabricated from PECVD silicon nitride employing zinc sulphide as the sacrificial layer

Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors

MWIR HgCdTe Photodiodes based on high-density plasma-induced type conversion

Investigation of 1/f noise mechanisms in midwave infrared HgCdTe gated photodiodes

Nanoscratch-induced deformation of single crystal silicon

Effect of high-density plasma process parameters on carrier transport properties in p-to-n type converted Hg0.7Cd0.3Te layer

Dark currents in long wavelength infrared HgCdTe gated photodiodes

Incorporation and activation of arsenic in MBE-grown HgCdTe

Preparation and Characterization of Cerium Substituted Bismuth Dysprosium Iron Garnets for Magneto-Optic Applications

Process Control of Cantilever Deflection for Sensor Application Based on Optical Waveguides

Mercury cadmium telluride/cadmium telluride distributed Bragg reflectors for use with resonant cavity-enhanced detectors

Diffusion length measurements in p-HgCdTe using laser beam induced current

Characterization of low-temperature bulk micromachining of silicon using an SF 6 /O 2 inductively coupled plasma

Contribution of hole trap to persistent photoconductivity in n -type GaN

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