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Punch-through in short-channel AlGaN/GaN HFETs

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.395-398

2006

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HEMT Average Temperature Determination Utilizing Low-Power Device Operation

IEEE transactions on electron devices, 2022-10, Vol.69 (10), p.5484-5489

2022

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Average Temperature Determination of AlGaN/GaN HEMT Utilizing Pinch-Off Voltage Biasing

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5803-5806

2023

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AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

IEEE electron device letters, 2010-01, Vol.31 (1), p.11-13

2010

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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Journal of applied physics, 2010, Vol.107 (2), p.024504-024504-4

2010

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Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor

Semiconductor science and technology, 2021-02, Vol.36 (2), p.25019

2021

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Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT

Semiconductor science and technology, 2019-06, Vol.34 (6), p.65021

2019

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Low density shear viscosity of Lennard-Jones chains of variable rigidities

The Journal of chemical physics, 2012-11, Vol.137 (20), p.204306-204306

2012

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ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

IEEE electron device letters, 2016-05, Vol.37 (5), p.629-632

2016

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AlGaN/GaN HEMT channel temperature determination utilizing external heater

Semiconductor science and technology, 2020-02, Vol.35 (2), p.25006

2020

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In Situ NMR Measurements of Vapor Deposited Ice

Journal of physical chemistry. C, 2016-11, Vol.120 (44), p.25445-25450

2016

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Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures

Applied physics letters, 2014-11, Vol.105 (19)

2014

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Characteristics of Al2O3/AlInN/GaN MOSHEMT

Electronics letters, 2007, Vol.43 (12), p.691-692

2007

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Diamond overgrown InAlN/GaN HEMT

Diamond and related materials, 2011-04, Vol.20 (4), p.604-608

2011

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Compact modelling of InAlN/GaN HEMT for low noise applications

Semiconductor science and technology, 2014-09, Vol.29 (9), p.95014

2014

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L'impact de la crise sanitaire sur le recours au SAMU

Journal of Epidemiology and Population Health, 2024-03, Vol.72, p.202331, Article 202331

2024

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L'impact de la crise sanitaire sur le recours au SAMU

Journal of Epidemiology and Population Health, 2024-03, Vol.72

2024

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Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

IEEE electron device letters, 2006-01, Vol.27 (1), p.7-9

2006

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Getting the Predoc Back Into Documentation: Students as Scribes During Their Clerkship

Family medicine, 2020-04, Vol.52 (4), p.291-294

2020

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Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors

Microelectronics and reliability, 2012-07, Vol.52 (7), p.1323-1327

2012

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Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films

Journal of applied physics, 2008-09, Vol.104 (6)

2008

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A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications

Microelectronics and reliability, 2005-09, Vol.45 (9), p.1617-1621

2005

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Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1476-1480

2013

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Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs

Diamond and related materials, 2009-05, Vol.18 (5), p.884-889

2009

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Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

Solid-state electronics, 2012, Vol.67 (1), p.74-78

2012

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Punch-through in short-channel AlGaN/GaN HFETs

HEMT Average Temperature Determination Utilizing Low-Power Device Operation

Average Temperature Determination of AlGaN/GaN HEMT Utilizing Pinch-Off Voltage Biasing

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor

Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT

Low density shear viscosity of Lennard-Jones chains of variable rigidities

ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMT

AlGaN/GaN HEMT channel temperature determination utilizing external heater

In Situ NMR Measurements of Vapor Deposited Ice

Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures

Characteristics of Al2O3/AlInN/GaN MOSHEMT

Diamond overgrown InAlN/GaN HEMT

Compact modelling of InAlN/GaN HEMT for low noise applications

L'impact de la crise sanitaire sur le recours au SAMU

L'impact de la crise sanitaire sur le recours au SAMU

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

Getting the Predoc Back Into Documentation: Students as Scribes During Their Clerkship

Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors

Impact of magnetron configuration on plasma and film properties of sputtered aluminum nitride thin films

A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications

Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate

Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

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