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Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

Chemistry of materials, 2017-04, Vol.29 (7), p.2927-2938

2017

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CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

IEEE electron device letters, 2012-05, Vol.33 (5), p.667-669

2012

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Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism

Chemistry of materials, 2018-11, Vol.30 (21), p.7648-7663

2018

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Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometry

Scientific reports, 2022-10, Vol.12 (1), p.17770-17770, Article 17770

2022

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Effective electrical passivation of Ge(100) for high- k gate dielectric layers using germanium oxide

Applied physics letters, 2007-08, Vol.91 (8), p.082904-082904-3

2007

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Formation mechanism of 2D SnS2 and SnS by chemical vapor deposition using SnCl4 and H2S

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (23), p.6172-6178

2018

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Diffusion‐Mediated Growth and Size‐Dependent Nanoparticle Reactivity during Ruthenium Atomic Layer Deposition on Dielectric Substrates

Advanced materials interfaces, 2018-12, Vol.5 (24), p.n/a

2018

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Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

Applied physics letters, 2007-09, Vol.91 (13)

2007

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Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective

Micro and Nano Engineering, 2023-09, Vol.20, p.100223, Article 100223

2023

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Quantified Uniformity and Selectivity of TiO2 Films in 45‐nm Half Pitch Patterns Using Area‐Selective Deposition Supercycles

Advanced materials interfaces, 2023-07, Vol.10 (20), p.n/a

2023

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Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-01, Vol.30 (1), p.01A127-01A127-10

2012

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Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Applied physics letters, 2010-09, Vol.97 (11)

2010

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Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide

Chemistry of materials, 2013-04, Vol.25 (7), p.1078-1091

2013

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Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask

Micro and Nano Engineering, 2021-08, Vol.12, p.100089, Article 100089

2021

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The conversion mechanism of amorphous silicon to stoichiometric WS2

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (15), p.4122-413

2018

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Exploring the optimal combination of Ru/Ta bilayer mask stacks and illumination source shapes to mitigate Mask 3D effects at High-NA Extreme Ultraviolet Lithography

Optics express, 2024-06

2024

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Roughness evolution during the atomic layer deposition of metal oxides

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-11, Vol.31 (6)

2013

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Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Applied physics letters, 2011-08, Vol.99 (5), p.052906-052906-3

2011

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Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Applied physics letters, 2010-11, Vol.97 (22)

2010

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Atomic layer deposition of hafnium oxide on germanium substrates

Journal of applied physics, 2005-03, Vol.97 (6), p.064104-064104-10

2005

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Ruthenocene and cyclopentadienyl pyrrolyl ruthenium as precursors for ruthenium atomic layer deposition: a comparative study of dissociation enthalpies

Theoretical chemistry accounts, 2012-07, Vol.131 (7), Article 1238

2012

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Atomic imaging of nucleation of trimethylaluminum on clean and H2O functionalized Ge(100) surfaces

The Journal of chemical physics, 2011-08, Vol.135 (5), p.054705-054705

2011

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Insight into Selective Surface Reactions of Dimethylamino-trimethylsilane for Area-Selective Deposition of Metal, Nitride, and Oxide

Journal of physical chemistry. C, 2020-04, Vol.124 (13), p.7163-7173

2020

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Identification of Cu(II) coordination structures in Cu-ZSM-5, based on a DFT/ab initio assignment of the EPR spectra

Physical chemistry chemical physics : PCCP, 2003-01, Vol.5 (10), p.2135-2144

2003

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Impact of SiO2 surface composition on trimethylsilane passivation for area-selective deposition

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019, Vol.7 (38), p.11911-11918

2019

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Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism

Quantification of area-selective deposition on nanometer-scale patterns using Rutherford backscattering spectrometry

Effective electrical passivation of Ge(100) for high- k gate dielectric layers using germanium oxide

Formation mechanism of 2D SnS2 and SnS by chemical vapor deposition using SnCl4 and H2S

Diffusion‐Mediated Growth and Size‐Dependent Nanoparticle Reactivity during Ruthenium Atomic Layer Deposition on Dielectric Substrates

Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective

Quantified Uniformity and Selectivity of TiO2 Films in 45‐nm Half Pitch Patterns Using Area‐Selective Deposition Supercycles

Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide

Characterization of Ru4-xTax (x = 1,2,3) alloy as material candidate for EUV low-n mask

The conversion mechanism of amorphous silicon to stoichiometric WS2

Exploring the optimal combination of Ru/Ta bilayer mask stacks and illumination source shapes to mitigate Mask 3D effects at High-NA Extreme Ultraviolet Lithography

Roughness evolution during the atomic layer deposition of metal oxides

Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Atomic layer deposition of hafnium oxide on germanium substrates

Ruthenocene and cyclopentadienyl pyrrolyl ruthenium as precursors for ruthenium atomic layer deposition: a comparative study of dissociation enthalpies

Atomic imaging of nucleation of trimethylaluminum on clean and H2O functionalized Ge(100) surfaces

Insight into Selective Surface Reactions of Dimethylamino-trimethylsilane for Area-Selective Deposition of Metal, Nitride, and Oxide

Identification of Cu(II) coordination structures in Cu-ZSM-5, based on a DFT/ab initio assignment of the EPR spectra

Impact of SiO2 surface composition on trimethylsilane passivation for area-selective deposition

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