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Ground-State Equilibrium Thermodynamics and Switching Kinetics of Bistable [2]Rotaxanes Switched in Solution, Polymer Gels, and Molecular Electronic Devices

Chemistry : a European journal, 2005-12, Vol.12 (1), p.261-279

2005

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Infrared Spectroscopic Characterization of [2]Rotaxane Molecular Switch Tunnel Junction Devices

The journal of physical chemistry. B, 2006-04, Vol.110 (15), p.7609-7612

2006

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Spiers Memorial Lecture. Molecular mechanics and molecular electronics

Faraday discussions, 2006, Vol.131, p.9-22

2006

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A solid-state switch containing an electrochemically switchable bistable poly[n]rotaxane

Journal of materials chemistry, 2011-01, Vol.21 (5), p.1487-1495

2011

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A 160-kilobit molecular electronic memory patterned at 10(11) bits per square centimetre

Nature (London), 2007-01, Vol.445 (7126), p.414-417

2007

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Reliability considerations and radiation testing of memristor devices

2015 IEEE Aerospace Conference, 2015, p.1-6

2015

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Two-Dimensional Molecular Electronics Circuits

Chemphyschem, 2002-06, Vol.3 (6), p.519-525

2002

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Structures and Properties of Self-Assembled Monolayers of Bistable [2]Rotaxanes on Au (111) Surfaces from Molecular Dynamics Simulations Validated with Experiment

Journal of the American Chemical Society, 2005-02, Vol.127 (5), p.1563-1575

2005

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Single Event Susceptibility Analysis in CBRAM Resistive Memory Arrays

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2606-2612

2015

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Sensitivity of metal oxide memristors to radiation-induced displacement damage

2014 IEEE Aerospace Conference, 2014, p.1-5

2014

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Strategic Evolution of the Innovation Lab at the Aerospace Corporation

2020 IEEE Aerospace Conference, 2020, p.1-9

2020

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Early Outcomes from the Innovation Initiative at the Aerospace Corporation

2019 IEEE Aerospace Conference, 2019, p.1-8

2019

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Stimulating a culture of innovation at the aerospace corporation

2018 IEEE Aerospace Conference, 2018, p.1-8

2018

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Radiation effects studies on thin film TiO2 memristor devices

2013 IEEE Aerospace Conference, 2013, p.1-8

2013

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Assessment of AP9 and solar cell degradation models with flight data

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.3103-3107

2013

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Traps and Defects in AlGaN-GaN High Electron Mobility Transistors on Semi-Insulating SiC Substrates

MRS proceedings, 2009, Vol.1202 (1), Article 1202-I09-02

2009

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Radiation Hardness of rm TiO 2 Memristive Junctions

IEEE transactions on nuclear science, 2010-06, Vol.57 (3), p.1640-1643

2010

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Radiation Hardness of Memristive Junctions

IEEE transactions on nuclear science, 2010-06, Vol.57 (3), p.1640-1643

2010

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A 160-kilobit molecular electronic memory patterned at 10 super(11) bits per square centimetre

Nature, 2007-01, Vol.445 (7126), p.414-417

2007

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A 160-kilobit molecular electronic memory patterned at 10 11 bits per square centimetre

Nature (London), 2007-01, Vol.445 (7126), p.414-417

2007

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Integration and scaling of molecular and solid-state materials

DeIonno, Erica

2006

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Integration and scaling of molecular and solid-state materials

DeIonno, Erica

2006

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Light-Directed Assembly of Nanoparticles

Angewandte Chemie (International ed.), 1997-05, Vol.36 (10), p.1080-1083

1997

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A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre

Nature (London), 2007-01, Vol.445 (7126), p.414-417

2007

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Cover Picture: Ground-State Equilibrium Thermodynamics and Switching Kinetics of Bistable [2]Rotaxanes Switched in Solution, Polymer Gels, and Molecular Electronic Devices (Chem. Eur. J. 1/2006)

Chemistry : a European journal, 2006-01, Vol.12 (1), p.3-3

2006

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Ground-State Equilibrium Thermodynamics and Switching Kinetics of Bistable [2]Rotaxanes Switched in Solution, Polymer Gels, and Molecular Electronic Devices

Infrared Spectroscopic Characterization of [2]Rotaxane Molecular Switch Tunnel Junction Devices

Spiers Memorial Lecture. Molecular mechanics and molecular electronics

A solid-state switch containing an electrochemically switchable bistable poly[n]rotaxane

A 160-kilobit molecular electronic memory patterned at 10(11) bits per square centimetre

Reliability considerations and radiation testing of memristor devices

Two-Dimensional Molecular Electronics Circuits

Structures and Properties of Self-Assembled Monolayers of Bistable [2]Rotaxanes on Au (111) Surfaces from Molecular Dynamics Simulations Validated with Experiment

Single Event Susceptibility Analysis in CBRAM Resistive Memory Arrays

Sensitivity of metal oxide memristors to radiation-induced displacement damage

Strategic Evolution of the Innovation Lab at the Aerospace Corporation

Early Outcomes from the Innovation Initiative at the Aerospace Corporation

Stimulating a culture of innovation at the aerospace corporation

Radiation effects studies on thin film TiO2 memristor devices

Assessment of AP9 and solar cell degradation models with flight data

Traps and Defects in AlGaN-GaN High Electron Mobility Transistors on Semi-Insulating SiC Substrates

Radiation Hardness of rm TiO 2 Memristive Junctions

Radiation Hardness of Memristive Junctions

A 160-kilobit molecular electronic memory patterned at 10 super(11) bits per square centimetre

A 160-kilobit molecular electronic memory patterned at 10 11 bits per square centimetre

Integration and scaling of molecular and solid-state materials

Integration and scaling of molecular and solid-state materials

Light-Directed Assembly of Nanoparticles

A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre

Cover Picture: Ground-State Equilibrium Thermodynamics and Switching Kinetics of Bistable [2]Rotaxanes Switched in Solution, Polymer Gels, and Molecular Electronic Devices (Chem. Eur. J. 1/2006)

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