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High-gain and low-threshold InAs quantum-dot lasers on InP

Applied physics letters, 2005-12, Vol.87 (24), p.243107-243107-3

2005

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Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

Journal of crystal growth, 2013-10, Vol.380, p.157-162

2013

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X-ray study of antiphase domains and their stability in MBE grown GaP on Si

Journal of crystal growth, 2011-05, Vol.323 (1), p.409-412

2011

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23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers

Optics express, 2013-11, Vol.21 (23), p.29000-29005

2013

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Carrier relaxation dynamics in InAs∕InP quantum dots

Applied physics letters, 2008-05, Vol.92 (19)

2008

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Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Applied physics letters, 2001-03, Vol.78 (12), p.1751-1753

2001

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Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 $\mu$m

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.764-773

2009

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Strong generation of coherent acoustic phonons in semiconductor quantum dots

Physical review letters, 2007-05, Vol.98 (20), p.207402-207402, Article 207402

2007

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Vertical electronic coupling between InAs∕InP quantum-dot layers emitting in the near-infrared range

Applied physics letters, 2005-03, Vol.86 (11)

2005

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Kinetic model of element III segregation during molecular beam epitaxy of III-III′-V semiconductor compounds

Applied physics letters, 1995-01, Vol.66 (1), p.52-54

1995

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Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD

Journal of physics. D, Applied physics, 2008-08, Vol.41 (16), p.165505-165505 (8)

2008

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Time-resolved pump probe of 1.55μm InAs∕InP quantum dots under high resonant excitation

Applied physics letters, 2006-04, Vol.88 (17)

2006

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Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates

Journal of crystal growth, 2005-01, Vol.273 (3), p.357-362

2005

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Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser

Journal of crystal growth, 2003-04, Vol.251 (1), p.230-235

2003

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Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

Electronics letters, 2009, Vol.45 (1), p.50-51

2009

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290 fs switching time of Fe-doped quantum well saturable absorbers in a microcavity in 1.55μm range

Applied physics letters, 2004-12, Vol.85 (24), p.5926-5928

2004

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Critical thickness for InAs quantum dot formation on (311)B InP substrates

Journal of crystal growth, 2009-04, Vol.311 (9), p.2626-2629

2009

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Quantitative investigations of optical absorption in InAs∕InP(311)B quantum dots emitting at 1.55μm wavelength

Applied physics letters, 2004-12, Vol.85 (23), p.5685-5687

2004

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Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection

Semiconductor science and technology, 2005-05, Vol.20 (5), p.459-463

2005

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Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells

Journal of applied physics, 2003-08, Vol.94 (4), p.2355-2359

2003

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Si wafer bonded of a-Si∕a-SiNx distributed Bragg reflectors for 1.55-μm-wavelength vertical cavity surface emitting lasers

Journal of applied physics, 2005-08, Vol.98 (4)

2005

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In vivo and in vitro evidences that carotenoids could modulate the neutrophil respiratory burst during dietary manipulation

European journal of nutrition, 2005-03, Vol.44 (2), p.114-120

2005

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Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited

Journal of crystal growth, 2006-08, Vol.293 (2), p.263-268

2006

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Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

Physica status solidi. C, 2009-10, Vol.6 (10), p.2217-2221

2009

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Electron-acoustic phonon interaction in a single quantum dots layer: Acoustic mirror and cavity effects

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (12), Article 125323

2004

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High-gain and low-threshold InAs quantum-dot lasers on InP

Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

X-ray study of antiphase domains and their stability in MBE grown GaP on Si

23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers

Carrier relaxation dynamics in InAs∕InP quantum dots

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 $\mu$m

Strong generation of coherent acoustic phonons in semiconductor quantum dots

Vertical electronic coupling between InAs∕InP quantum-dot layers emitting in the near-infrared range

Kinetic model of element III segregation during molecular beam epitaxy of III-III′-V semiconductor compounds

Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD

Time-resolved pump probe of 1.55μm InAs∕InP quantum dots under high resonant excitation

Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates

Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser

Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

290 fs switching time of Fe-doped quantum well saturable absorbers in a microcavity in 1.55μm range

Critical thickness for InAs quantum dot formation on (311)B InP substrates

Quantitative investigations of optical absorption in InAs∕InP(311)B quantum dots emitting at 1.55μm wavelength

Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection

Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells

Si wafer bonded of a-Si∕a-SiNx distributed Bragg reflectors for 1.55-μm-wavelength vertical cavity surface emitting lasers

In vivo and in vitro evidences that carotenoids could modulate the neutrophil respiratory burst during dietary manipulation

Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited

Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers

Electron-acoustic phonon interaction in a single quantum dots layer: Acoustic mirror and cavity effects

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