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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

Materials, 2020-09, Vol.13 (19), p.4271

2020

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Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Applied physics letters, 2010-09, Vol.97 (11)

2010

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Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

IEEE electron device letters, 2010-08, Vol.31 (8), p.851-853

2010

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Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

Micromachines (Basel), 2020-01, Vol.11 (1), p.101

2020

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Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs

IEEE transactions on electron devices, 2010-12, Vol.57 (12), p.3333-3339

2010

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Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S1045-S1048

2009

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Solid phase epitaxy of amorphous Ge films deposited by PECVD

Journal of crystal growth, 2011-09, Vol.331 (1), p.40-43

2011

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Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S996-S998

2009

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Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface

Applied physics express, 2011-09, Vol.4 (9), p.94101

2011

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A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Applied physics letters, 2023-01, Vol.122 (3)

2023

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High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S988-S991

2009

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Surface recombination velocity in GaAs and In0.15Ga0.85As thin films

Applied physics letters, 2007-03, Vol.90 (13)

2007

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Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors

Applied physics letters, 2003-04, Vol.82 (17), p.2838-2840

2003

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AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts

Electronics (Basel), 2021-03, Vol.10 (6), p.635

2021

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Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures

Japanese Journal of Applied Physics, 2006-03, Vol.45 (3L), p.L224

2006

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GaN-on-Si HEMT stress under high electric field condition

Physica status solidi. C, 2009-06, Vol.6 (S2), p.S1024-S1028

2009

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Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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Low On‐Resistance and Low Trapping Effects in 1200V Superlattice GaN‐on‐Silicon Heterostructures

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7)

2020

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(Invited) Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications

ECS transactions, 2010-01, Vol.33 (6), p.933-939

2010

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Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

Journal of applied physics, 2006-05, Vol.99 (9)

2006

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Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.310-312

2020

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AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

2009

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Indium-Rich InGaN Films Grown on Ge Substrate by Plasma-Assisted Molecular Beam Epitaxy for Solar Water Splitting

Journal of electronic materials, 2015, Vol.44 (1), p.202-209

2015

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Gallium nitride MEMS resonators: how residual stress impacts design and performances

Microsystem technologies : sensors, actuators, systems integration, 2018, Vol.24 (1), p.371-377

2018

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AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

Japanese Journal of Applied Physics, 2008-03, Vol.47 (3R), p.1553

2008

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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

Experimental and simulation study of breakdown voltage enhancement of AlGaN/GaN heterostructures by Si substrate removal

Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs

Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD

Solid phase epitaxy of amorphous Ge films deposited by PECVD

Influence of thermal anneal steps on the current collapse of fluorine treated enhancement mode SiN/AlGaN/GaN HEMTs

Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface

A micro-electro-mechanical accelerometer based on gallium nitride on silicon

High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

Surface recombination velocity in GaAs and In0.15Ga0.85As thin films

Extended wavelength InGaAs on GaAs using InAlAs buffer for back-side-illuminated short-wave infrared detectors

AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts

Effect of Surface Passivation on Two-Dimensional Electron Gas Carrier Density in AlGaN/GaN Structures

GaN-on-Si HEMT stress under high electric field condition

Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures

Low On‐Resistance and Low Trapping Effects in 1200V Superlattice GaN‐on‐Silicon Heterostructures

(Invited) Selective Epitaxial Growth of III-V Semiconductor Heterostructures on Si Substrates for Logic Applications

Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance

Indium-Rich InGaN Films Grown on Ge Substrate by Plasma-Assisted Molecular Beam Epitaxy for Solar Water Splitting

Gallium nitride MEMS resonators: how residual stress impacts design and performances

AlGaN/GaN High Electron Mobility Transistors Grown on 150 mm Si(111) Substrates with High Uniformity

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