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Communication in healthcare: a narrative review of the literature and practical recommendations

International journal of clinical practice (Esher), 2015-11, Vol.69 (11), p.1257-1267

2015

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A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Applied physics letters, 2023-01, Vol.122 (3)

2023

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Ohmic contact formation on n -type Ge

Applied physics letters, 2008-01, Vol.92 (2), p.022106-022106-3

2008

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Communication satisfaction and job satisfaction among critical care nurses and their impact on burnout and intention to leave: A questionnaire study

Intensive & critical care nursing, 2018-10, Vol.48, p.21-27

2018

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Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

IEEE electron device letters, 2010-02, Vol.31 (2), p.111-113

2010

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Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer

Journal of applied physics, 2005-09, Vol.98 (5)

2005

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High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

Applied physics letters, 2008-05, Vol.92 (19)

2008

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Gangliosides in breast cancer: New perspectives

Biochemistry (Moscow), 2015-07, Vol.80 (7), p.808-819

2015

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Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy

Journal of applied physics, 2010-10, Vol.108 (7), p.073522-073522-6

2010

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Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Journal of electronic materials, 2006-04, Vol.35 (4), p.592-598

2006

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Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers

Journal of the Electrochemical Society, 2011, Vol.158 (4), p.H358

2011

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Mg doping of GaN by molecular beam epitaxy

Journal of physics. D, Applied physics, 2011-04, Vol.44 (13), p.135406

2011

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Effect of V/III ratio in AlN and AlGaN MOVPE

Journal of crystal growth, 2006-01, Vol.287 (2), p.601-604

2006

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Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.310-312

2020

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GaAs on Ge for CMOS

Thin solid films, 2008-11, Vol.517 (1), p.148-151

2008

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Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere

Applied physics letters, 2009-03, Vol.94 (11)

2009

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Hydrogen and inert species in solid phase epitaxy

Applied physics letters, 2010-02, Vol.96 (5), p.052109-052109-3

2010

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AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

Journal of crystal growth, 2011-01, Vol.315 (1), p.204-207

2011

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Growth and characterization of unintentionally doped GaN grown on silicon(1 1 1) substrates

Journal of crystal growth, 2008-11, Vol.310 (23), p.4888-4890

2008

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AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

Journal of crystal growth, 2007, Vol.298, p.822-825

2007

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Suppression of domain formation in GaN layers grown on Ge(1 1 1)

Journal of crystal growth, 2009-02, Vol.311 (5), p.1306-1310

2009

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Mutual perception of communication between general practitioners and hospital-based specialists

Acta clinica belgica (English ed. Online), 2015-10, Vol.70 (5), p.350-356

2015

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Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE

Physica status solidi. A, Applications and materials science, 2011-01, Vol.208 (1), p.129-135

2011

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HIV disclosure in the workplace

Acta clinica belgica (English ed. Online), 2014-06, Vol.69 (3), p.191-193

2014

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AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE

Physica status solidi. C, 2008-05, Vol.5 (6), p.1600-1602

2008

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Communication in healthcare: a narrative review of the literature and practical recommendations

A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Ohmic contact formation on n -type Ge

Communication satisfaction and job satisfaction among critical care nurses and their impact on burnout and intention to leave: A questionnaire study

Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer

High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy

Gangliosides in breast cancer: New perspectives

Strain effects in GaN epilayers grown on different substrates by metal organic vapor phase epitaxy

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers

Mg doping of GaN by molecular beam epitaxy

Effect of V/III ratio in AlN and AlGaN MOVPE

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

GaAs on Ge for CMOS

Solid phase epitaxy of amorphous Ge on Si in N2 atmosphere

Hydrogen and inert species in solid phase epitaxy

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

Growth and characterization of unintentionally doped GaN grown on silicon(1 1 1) substrates

AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

Suppression of domain formation in GaN layers grown on Ge(1 1 1)

Mutual perception of communication between general practitioners and hospital-based specialists

Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE

HIV disclosure in the workplace

AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE

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