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Defect profiling in FEFET Si:HfO2 layers

Applied physics letters, 2020-11, Vol.117 (20)

2020

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Towards Complete Recovery of Circuit Degradation by Annealing With On-Chip Heaters

IEEE electron device letters, 2023-02, Vol.44 (2), p.201-204

2023

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Unveiling the Vulnerability of Oxide-Breakdown-Based PUF

IEEE electron device letters, 2024-05, Vol.45 (5), p.750-753

2024

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Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Applied physics letters, 2015-02, Vol.106 (5)

2015

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Line-to-Line TDDB Modeling: LER Specs for Sub-20-nm Pitch Interconnects

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.1-6

2023

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OxRRAM-Based Analog in-Memory Computing for Deep Neural Network Inference: A Conductance Variability Study

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2301-2305

2021

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Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

Applied physics letters, 2010-12, Vol.97 (24)

2010

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Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Journal of applied physics, 2013-08, Vol.114 (7)

2013

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Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

Journal of applied physics, 2001-09, Vol.90 (5), p.2057-2121

2001

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A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-7

2023

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SOT-MRAM Based Analog in-Memory Computing for DNN Inference

2020 IEEE Symposium on VLSI Technology, 2020, p.1-2

2020

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Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

Applied physics letters, 2014-06, Vol.104 (23)

2014

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Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Applied physics letters, 2011-08, Vol.99 (5)

2011

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Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics

IEEE electron device letters, 2003-02, Vol.24 (2), p.87-89

2003

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Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM

IEEE electron device letters, 2015-08, Vol.36 (8), p.775-777

2015

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Sub-10 nm low current resistive switching behavior in hafnium oxide stack

Applied physics letters, 2016-03, Vol.108 (12)

2016

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Scalability of valence change memory: From devices to tip-induced filaments

AIP advances, 2016-08, Vol.6 (8), p.085009-085009-6

2016

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Modeling of uniform switching RRAM devices and impact of critical defects

Microelectronic engineering, 2017-06, Vol.178, p.93-97

2017

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Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-6

2023

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Electrical properties of high- κ gate dielectrics: Challenges, current issues, and possible solutions

Materials science & engineering. R, Reports : a review journal, 2006-04, Vol.51 (4), p.37-85

2006

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Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-7

2024

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Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

Applied physics letters, 2016-07, Vol.109 (2)

2016

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Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.500-506

2002

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Modeling and spectroscopy of ovonic threshold switching defects

2021 IEEE International Reliability Physics Symposium (IRPS), 2021, p.1-5

2021

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Origin of NBTI variability in deeply scaled pFETs

2010 IEEE International Reliability Physics Symposium, 2010, p.26-32

2010

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Defect profiling in FEFET Si:HfO2 layers

Towards Complete Recovery of Circuit Degradation by Annealing With On-Chip Heaters

Unveiling the Vulnerability of Oxide-Breakdown-Based PUF

Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Line-to-Line TDDB Modeling: LER Specs for Sub-20-nm Pitch Interconnects

OxRRAM-Based Analog in-Memory Computing for Deep Neural Network Inference: A Conductance Variability Study

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices

SOT-MRAM Based Analog in-Memory Computing for DNN Inference

Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics

Operating-Current Dependence of the Cu-Mobility Requirements in Oxide-Based Conductive-Bridge RAM

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

Scalability of valence change memory: From devices to tip-induced filaments

Modeling of uniform switching RRAM devices and impact of critical defects

Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology

Electrical properties of high- κ gate dielectrics: Challenges, current issues, and possible solutions

Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications

Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

Modeling and spectroscopy of ovonic threshold switching defects

Origin of NBTI variability in deeply scaled pFETs

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