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Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon

Applied physics letters, 2010-06, Vol.96 (26), p.263503-263503-3

2010

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Influence of anisotropic light-hole band structure on indirect tunneling in silicon

Applied physics letters, 2011-04, Vol.98 (17)

2011

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Theory for high Q p - n junction avalanche inductors

Applied physics letters, 2006-07, Vol.89 (1), p.013501-013501-3

2006

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Delay of Kirk effect due to collector current spreading in heterojunction bipolar transistors

IEEE electron device letters, 1996-10, Vol.17 (10), p.470-472

1996

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Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

IEEE transactions on microwave theory and techniques, 1995-04, Vol.43 (4), p.969-976

1995

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DC instability of the series connection of tunneling diodes

IEEE transactions on microwave theory and techniques, 1996-06, Vol.44 (6), p.936-943

1996

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A theoretical study of an integrated quantum-well resonant tunneling oscillator initiated by an IMPATT diode

IEEE transactions on microwave theory and techniques, 1995-01, Vol.43 (1), p.112-118

1995

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Advantages of an indirect semiconductor quantum well system for infrared detection

Journal of applied physics, 1989-04, Vol.65 (8), p.3253-3258

1989

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Considerations and simulations of subfrequency excitation of series integrated resonant tunneling diodes oscillator

IEEE transactions on microwave theory and techniques, 1995-10, Vol.43 (10), p.2478-2485

1995

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Influence of anisotropic light-hole band structure on indirect tunnelingin silicon

Applied physics letters, 2011-04, Vol.98 (17), p.173509-173509-3

2011

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Intersubband absorption of silicon-based quantum wells for infrared imaging

Journal of applied physics, 1988-08, Vol.64 (3), p.1573-1575

1988

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A Monte Carlo study of many-valley effects on the temporal electron transient transport in silicon

Journal of applied physics, 1991-11, Vol.70 (9), p.4938-4945

1991

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Analysis and simulation of the quantum well injection transit time diode

IEEE transactions on electron devices, 1988-12, Vol.35 (12), p.2315-2322

1988

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Theory and small signal analysis for a new bipolar injection transit time device (BIPOLITT)

IEEE transactions on electron devices, 2000-07, Vol.47 (7), p.1310-1314

2000

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Efficiency and power output of the quantum-well injection transit-time device

IEEE electron device letters, 1987-12, Vol.8 (12), p.560-562

1987

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Theoretical investigations of a proposed series integration of resonant tunneling diodes for millimeter-wave power generation

IEEE transactions on microwave theory and techniques, 1992-03, Vol.40 (3), p.434-441

1992

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A generalized analytical model for the quantum well injection transit time diode

IEEE transactions on electron devices, 1991-01, Vol.38 (1), p.14-22

1991

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Free-space RF triggering of an active antenna with series-connected tunneling diodes

IEEE microwave and guided wave letters, 1996-08, Vol.6 (8), p.280-282

1996

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The effect of band non-parabolicity of shallow donors

Solid state communications, 1982-01, Vol.43 (4), p.287-289

1982

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Large signal quantum-well oscillator design

1993 23rd European Microwave Conference, 1993, p.817-818

1993

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Fast Electric Pulse Excitation of an Oscillator with Several Tunneling Devices in Series

1994 24th European Microwave Conference, 1994, Vol.1, p.782-787

1994

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RF excitation of an oscillator with several tunneling devices in series

IEEE microwave and guided wave letters, 1994-11, Vol.4 (11), p.364-366

1994

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Investigation of Narrow Band-Gap Semiconductors for Tunnetts

1981 International Conference on Submillimeter Waves and Their Applications, 1981, p.1-2

1981

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GaAs Abrupt Junction Mitatt and Tunnett

1981 International Conference on Submillimeter Waves and Their Applications, 1981, p.1-2

1981

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Simulation of a subharmonic excitation of series integrated resonant tunneling diodes

IEEE microwave and guided wave letters, 1995-01, Vol.5 (1), p.18-20

1995

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Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon

Influence of anisotropic light-hole band structure on indirect tunneling in silicon

Theory for high Q p - n junction avalanche inductors

Delay of Kirk effect due to collector current spreading in heterojunction bipolar transistors

Fundamental and subharmonic excitation for an oscillator with several tunneling diodes in series

DC instability of the series connection of tunneling diodes

A theoretical study of an integrated quantum-well resonant tunneling oscillator initiated by an IMPATT diode

Advantages of an indirect semiconductor quantum well system for infrared detection

Considerations and simulations of subfrequency excitation of series integrated resonant tunneling diodes oscillator

Influence of anisotropic light-hole band structure on indirect tunnelingin silicon

Intersubband absorption of silicon-based quantum wells for infrared imaging

A Monte Carlo study of many-valley effects on the temporal electron transient transport in silicon

Analysis and simulation of the quantum well injection transit time diode

Theory and small signal analysis for a new bipolar injection transit time device (BIPOLITT)

Efficiency and power output of the quantum-well injection transit-time device

Theoretical investigations of a proposed series integration of resonant tunneling diodes for millimeter-wave power generation

A generalized analytical model for the quantum well injection transit time diode

Free-space RF triggering of an active antenna with series-connected tunneling diodes

The effect of band non-parabolicity of shallow donors

Large signal quantum-well oscillator design

Fast Electric Pulse Excitation of an Oscillator with Several Tunneling Devices in Series

RF excitation of an oscillator with several tunneling devices in series

Investigation of Narrow Band-Gap Semiconductors for Tunnetts

GaAs Abrupt Junction Mitatt and Tunnett

Simulation of a subharmonic excitation of series integrated resonant tunneling diodes

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