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Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

IEEE electron device letters, 2017-01, Vol.38 (1), p.99-102

2017

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Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

IEEE electron device letters, 2017-12, Vol.38 (12), p.1696-1699

2017

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Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Applied physics letters, 2024-08, Vol.125 (9)

2024

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Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1838-1842

2018

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Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

Applied physics letters, 2024-03, Vol.124 (11)

2024

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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied physics letters, 2015-08, Vol.107 (9)

2015

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CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

IEEE electron device letters, 2012-05, Vol.33 (5), p.667-669

2012

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Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

Applied physics letters, 2022-06, Vol.120 (26)

2022

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Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

IEEE electron device letters, 2014-10, Vol.35 (10), p.1004-1006

2014

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Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

IEEE electron device letters, 2018-07, Vol.39 (7), p.999-1002

2018

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Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1721-1727

2018

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Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

Scientific reports, 2023-09, Vol.13 (1), p.15931-15931, Article 15931

2023

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Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Materials, 2021-04, Vol.14 (9), p.2316

2021

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Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4

2014

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Analytical Model for the Threshold Voltage of -(Al)GaN High-Electron-Mobility Transistors

IEEE transactions on electron devices, 2018-01, Vol.65 (1), p.79-86

2018

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Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1122-1129

2015

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Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

Materials, 2020-10, Vol.13 (21), p.4740

2020

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Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.3071-3079

2006

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Integration of GaN analog building blocks on p-GaN wafers for GaN ICs

Journal of semiconductors, 2021-02, Vol.42 (2), p.24103-118

2021

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Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

Micromachines (Basel), 2021-02, Vol.12 (2), p.199

2021

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Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p + n - n Diodes: The Road to Reliable Vertical MOSFETs

Micromachines (Basel), 2021-04, Vol.12 (4), p.445

2021

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Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

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Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

Journal of electronic materials, 2016-12, Vol.45 (12), p.6346-6354

2016

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Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

IEEE electron device letters, 2010-08, Vol.31 (8), p.851-853

2010

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Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.862-865

2014

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Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs

Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures

Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

Mg activation anneal of the p-GaN body in trench gate MOSFETs and its effect on channel mobility and threshold voltage stability

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

Epitaxial buffer structures grown on 200 mm engineering substrates for 1200 V E-mode HEMT application

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration

Investigation on Carrier Transport Through AlN Nucleation Layer From Differently Doped Si(111) Substrates

Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Au-free low temperature ohmic contacts for AlGaN/GaN power devices on 200 mm Si substrates

Analytical Model for the Threshold Voltage of -(Al)GaN High-Electron-Mobility Transistors

Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate

Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability

Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective

Integration of GaN analog building blocks on p-GaN wafers for GaN ICs

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p + n - n Diodes: The Road to Reliable Vertical MOSFETs

Impact of crystal orientation on ohmic contact resistance of enhancement-mode p-GaN gate high electron mobility transistors on 200 mm silicon substrates

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

Silicon Substrate Removal of GaN DHFETs for Enhanced (<1100 V) Breakdown Voltage

Leakage-current reduction and improved on-state performance of Au-free AlGaN/GaN-on-Si Schottky diode by embedding the edge terminations in the anode region

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