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Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films

Journal of applied physics, 2002-09, Vol.92 (5), p.2479-2484

2002

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Solid-state graphitization mechanisms of silicon carbide 6H–SiC polar faces

Applied surface science, 2000-08, Vol.162, p.406-412

2000

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High-temperature graphitization of the 6H-SiC (0001) face

Surface science, 1999-11, Vol.442 (1), p.9-18

1999

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The 3D unoccupied band structure of graphite by very-low-energy electron diffraction

Applied surface science, 2000-08, Vol.162, p.508-512

2000

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The use of high resolution electron-energy-loss spectroscopy for refining the infrared optical constants of GaS, GaSe, and InSe

Surface science, 1994-06, Vol.312 (1), p.174-180

1994

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Three-dimensional unoccupied band structure of graphite: Very-low-energy electron diffraction and band calculations

Physical review. B, Condensed matter, 2000-02, Vol.61 (7), p.4994-5001

2000

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Observation of Total and Partial Photon-Stimulated Desorption Yields of Neutral Atoms from Solid Ne under Selective Excitation in the Excitonic Range

Europhysics letters, 1988-09, Vol.7 (1), p.77-82

1988

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Inverse-photoemission spectroscopy of electron irradiated epitaxial CaF2 on Si(111)

Surface science, 1994-04, Vol.307-309, p.1038-1044

1994

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Many-body effects in the electronic structure of Sn/Si(111)-α-√3

Journal of physics. Condensed matter, 2001-06, Vol.13 (22), p.L521-L528

2001

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C60 growth on Si(100), GaSe(0001) and GeS(001): Influence of the substrate on the film crystallinity

Applied physics. A, Materials science & processing, 1993-03, Vol.56 (3), p.175-183

1993

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Time and spectrally resolved luminescence and relaxation processes in solid neon

The Journal of chemical physics, 1985-01, Vol.83 (1), p.49-57

1985

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Conduction-band dispersion in heteroepitaxial C60

Applied surface science, 1993-03, Vol.65-66, p.76-82

1993

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Inverse photoemission of GaSe

Journal of luminescence, 1991, Vol.48, p.645-648

1991

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The formation of the epitaxial CaF2/Si(111) interface investigated by k-resolved inverse photoemission spectroscopy

Applied surface science, 1992, Vol.56-58, p.821-826

1992

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Conduction-bands asymmetry of Si(111) revealed by inverse photoemission

Surface science, 1992-05, Vol.269-270, p.829-832

1992

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Surface or Bulk Location of Self-Trapped Excitons in Rare Gas Solids: Characterization via Luminescence

Physica scripta, 1987-02, Vol.35 (2), p.168-170

1987

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Intrinsic valence and conduction bands of Si(111)-1×1

Physical review. B, Condensed matter, 1996-12, Vol.54 (24), p.17654-17660

1996

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Unoccupied surface state on the (√3 × √3) R30° of 6H-SiC(0001)

Europhysics letters, 1997-07, Vol.39 (1), p.61-66

1997

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Inverse-photoemission spectroscopy of the unreconstructed, ideally H-terminated Si(111) surface

Physical review. B, Condensed matter, 1992-01, Vol.45 (3), p.1187-1192

1992

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Inverse photoemission study of non-reconstructed Si(111) surfaces: a comparison between H-Si(111)1x1 and As:Si(111)1x1

Surface science, 1995, Vol.331-333, p.1244-1249

1995

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Surface-sensitive luminescence in rare gas solids

Journal of physics. C, Solid state physics, 1988-03, Vol.21 (7), p.1307-1320

1988

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Electron stimulated desorption of solid argon via exciton creation

Journal de physique. Lettres, 1984-01, Vol.45 (9), p.467-473

1984

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Effet laser dans le CdS par bombardement électronique

physica status solidi (b), 1966, Vol.17 (2), p.875-879

1966

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Conduction band structure of the III–VI layer compound GaSe studied with inverse photoemission

Surface science, 1987-10, Vol.189, p.919-926

1987

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Many-body effects in the electronic structure of Sn/Si(111)-α-(3)1/2

Journal of physics. Condensed matter, 2001-06, Vol.13 (22), p.L521-L528

2001

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Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films

Solid-state graphitization mechanisms of silicon carbide 6H–SiC polar faces

High-temperature graphitization of the 6H-SiC (0001) face

The 3D unoccupied band structure of graphite by very-low-energy electron diffraction

The use of high resolution electron-energy-loss spectroscopy for refining the infrared optical constants of GaS, GaSe, and InSe

Three-dimensional unoccupied band structure of graphite: Very-low-energy electron diffraction and band calculations

Observation of Total and Partial Photon-Stimulated Desorption Yields of Neutral Atoms from Solid Ne under Selective Excitation in the Excitonic Range

Inverse-photoemission spectroscopy of electron irradiated epitaxial CaF2 on Si(111)

Many-body effects in the electronic structure of Sn/Si(111)-α-√3

C60 growth on Si(100), GaSe(0001) and GeS(001): Influence of the substrate on the film crystallinity

Time and spectrally resolved luminescence and relaxation processes in solid neon

Conduction-band dispersion in heteroepitaxial C60

Inverse photoemission of GaSe

The formation of the epitaxial CaF2/Si(111) interface investigated by k-resolved inverse photoemission spectroscopy

Conduction-bands asymmetry of Si(111) revealed by inverse photoemission

Surface or Bulk Location of Self-Trapped Excitons in Rare Gas Solids: Characterization via Luminescence

Intrinsic valence and conduction bands of Si(111)-1×1

Unoccupied surface state on the (√3 × √3) R30° of 6H-SiC(0001)

Inverse-photoemission spectroscopy of the unreconstructed, ideally H-terminated Si(111) surface

Inverse photoemission study of non-reconstructed Si(111) surfaces: a comparison between H-Si(111)1x1 and As:Si(111)1x1

Surface-sensitive luminescence in rare gas solids

Electron stimulated desorption of solid argon via exciton creation

Effet laser dans le CdS par bombardement électronique

Conduction band structure of the III–VI layer compound GaSe studied with inverse photoemission

Many-body effects in the electronic structure of Sn/Si(111)-α-(3)1/2

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