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Ga-As liquidus at temperatures below 650°C

Journal of applied physics, 1985-09, Vol.58 (6), p.2410-2412

1985

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Liquidus measurements of Ga-Sb and In-As in the 375-650 °C range

Journal of applied physics, 1986-05, Vol.59 (10), p.3593-3595

1986

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Buried heterojunction electroabsorption modulator

Applied physics letters, 1978-04, Vol.32 (8), p.471-473

1978

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Liquidus measurement of In-rich In-Sb solutions in the 300-525°C range

Journal of applied physics, 1988-05, Vol.63 (9), p.4774-4775

1988

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Liquid-phase-epitaxial InAsySb1-y on GaSb substrates using GaInAsSb buffer layers: growth, characterization, and application to mid-IR photodiodes

Journal of applied physics, 1987, Vol.61 (8), p.2898-2903

1987

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Growth and Properties of Liquid-Phase Epitaxial GaAs1-xSbx

Journal of applied physics, 1977-04, Vol.48 (4), p.1607-1614

1977

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Temperature dependence of InGaAsP double-heterostructure laser characteristics

Electronics letters, 1979-01, Vol.15 (21), p.695

1979

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Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y

Journal of electronic materials, 1980-05, Vol.9 (3), p.561-568

1980

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TP-C5 the wavelength dependence of InGaAsP laser threshold characteristics

IEEE transactions on electron devices, 1979-11, Vol.26 (11), p.1843-1843

1979

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Low threshold ridge waveguide laser at 1.55 μm

Electronics letters, 1983, Vol.19 (21), p.877-879

1983

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Growth and Characterization of Liquid-Phase Epitaxial InxGa1-xAs

Journal of applied physics, 1975-02, Vol.46 (2), p.775-782

1975

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The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap

Journal of the Electrochemical Society, 1978-07, Vol.125 (7), p.1053-1058

1978

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An In0.53Ga0.47As junction field-effect transistor

IEEE electron device letters, 1980-01, Vol.1 (6), p.110-111

1980

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A long-wavelength, annular In0.53Ga0.47As p-i-n photodetector

IEEE electron device letters, 1982-01, Vol.3 (12), p.415-417

1982

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High performance GaInAsSb/GaSb p - n photodiodes for the 1.8–2.3 μm wavelength range

Applied physics letters, 1986-04, Vol.48 (14), p.903-904

1986

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Efficient LPE-Grown InxGa1-xAs LEDs (Light-Emitting Diodes) at 1-1.1-MuM Wavelengths

Applied physics letters, 1974-08, Vol.25 (3), p.146-148

1974

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Electron transport in In0.53Ga0.47As/plasma oxide inversion layers

Applied physics letters, 1984-01, Vol.44 (3), p.344-345

1984

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Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range

Journal of electronic materials, 1985-11, Vol.14 (6), p.729-747

1985

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Uniform performance of high-efficiency room-temperature GaInAsSb/GaSb photodiodes for 175 < λ < 22 μm

Applied Optics, 1992-06, Vol.31 (18), p.3398

1992

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Liquidus Measurements of Indium-Rich In--Sb Solutions in the 300-525 deg C Range

Journal of applied physics, 1988-05, Vol.63 (9), p.4774-4775

1988

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Stimulated emission and the type of bandgap in GaSe

Solid state communications, 1971-07, Vol.9 (13), p.1107-1111

1971

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Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 μm

Electronics letters, 1989, Vol.25 (9), p.568

1989

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Liquidus measurements of Ga-Sb and In-As in the 375-650 degree C range

Journal of applied physics, 1986-01, Vol.59 (10), p.3593-3595

1986

Volltextzugriff (PDF)

Liquid-phase-epitaxial InAs y Sb1− y on GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid-IR photodiodes

Journal of applied physics, 1987-04, Vol.61 (8), p.2898-2903

1987

Volltextzugriff (PDF)

Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2•2 μm

Electronics letters, 1989, Vol.25 (9), p.568-570

1989

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Ga-As liquidus at temperatures below 650°C

Liquidus measurements of Ga-Sb and In-As in the 375-650 °C range

Buried heterojunction electroabsorption modulator

Liquidus measurement of In-rich In-Sb solutions in the 300-525°C range

Liquid-phase-epitaxial InAsySb1-y on GaSb substrates using GaInAsSb buffer layers: growth, characterization, and application to mid-IR photodiodes

Growth and Properties of Liquid-Phase Epitaxial GaAs1-xSbx

Temperature dependence of InGaAsP double-heterostructure laser characteristics

Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y

TP-C5 the wavelength dependence of InGaAsP laser threshold characteristics

Low threshold ridge waveguide laser at 1.55 μm

Growth and Characterization of Liquid-Phase Epitaxial InxGa1-xAs

The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap

An In0.53Ga0.47As junction field-effect transistor

A long-wavelength, annular In0.53Ga0.47As p-i-n photodetector

High performance GaInAsSb/GaSb p - n photodiodes for the 1.8–2.3 μm wavelength range

Efficient LPE-Grown InxGa1-xAs LEDs (Light-Emitting Diodes) at 1-1.1-MuM Wavelengths

Electron transport in In0.53Ga0.47As/plasma oxide inversion layers

Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range

Uniform performance of high-efficiency room-temperature GaInAsSb/GaSb photodiodes for 175 < λ < 22 μm

Liquidus Measurements of Indium-Rich In--Sb Solutions in the 300-525 deg C Range

Stimulated emission and the type of bandgap in GaSe

Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2.2 μm

Liquidus measurements of Ga-Sb and In-As in the 375-650 degree C range

Liquid-phase-epitaxial InAs y Sb1− y on GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid-IR photodiodes

Highly uniform, high quantum efficiency GaInAsSb/AlGaAsSb double heterostructure lasers emitting at 2•2 μm

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