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A user's guide to the encyclopedia of DNA elements (ENCODE)

PLoS biology, 2011-04, Vol.9 (4), p.e1001046-e1001046

2011

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Silicon Carbide Terahertz Emitting Devices

Journal of electronic materials, 2008-05, Vol.37 (5), p.726-729

2008

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S-band operation of SiC power MESFET with 20 W (4.4 W/mm) output power and 60% PAE

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.839-845

2004

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A-10 Virginians Report Unequal Access to Appropriate Licensed Healthcare Providers for Concussion

Archives of clinical neuropsychology, 2023-07, Vol.38 (5), p.812-812

2023

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Wet Chemical Digital Etching of GaAs at Room Temperature

Journal of the Electrochemical Society, 1996-11, Vol.143 (11), p.3652-3656

1996

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Pseudomorphic SiC alloys formed by Ge ion implantation

Applied physics letters, 2004-09, Vol.85 (12), p.2253-2255

2004

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A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation

Journal of electronic materials, 2002-05, Vol.31 (5), p.346-350

2002

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Ultrathin delta doped GaAs and AlAs tunnel junctions as interdevice ohmic contacts

Journal of applied physics, 1993-09, Vol.74 (6), p.4207-4212

DESALVO, G. C

1993

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Investigation of alternative window materials for GaAs solar cells

IEEE transactions on electron devices, 1993-04, Vol.40 (4), p.705-711

1993

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Silicon Carbide Terahertz Emitting Devices: Groups in Nitrides, SiC and ZnO

Journal of electronic materials, 2008, Vol.37 (5), p.726-729

2008

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Therapy of hepatitis C: Re‐treatment with alpha interferon

Hepatology (Baltimore, Md.), 1997-09, Vol.26 (S3), p.137S-142S

1997

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Lattice damage and atomic mixing induced by As++ implantation and thermal annealing in AlAs/GaAs multiple quantum-well structures

Journal of applied physics, 1991-10, Vol.70 (8), p.4181-4189

1991

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Base and collector resistances in heterojunction bipolar transistors

Solid-state electronics, 1997-11, Vol.41 (11), p.1739-1743

1997

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Simplified ohmic and Schottky contact formation for field effect transistors using the single layer integrated metal field effect transistor (SLIMFET) process

IEEE transactions on semiconductor manufacturing, 1995-08, Vol.8 (3), p.314-318

1995

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Emitter utilization in heterojunction bipolar transistors

Solid-state electronics, 1997-09, Vol.41 (9), p.1303-1308

1997

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A 6 to 16 GHz Linearized GaN Power Amplifier

2006 IEEE MTT-S International Microwave Symposium Digest, 2006, p.1364-1367

2006

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Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures

Journal of applied physics, 1994-07, Vol.76 (1), p.328-331

1994

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Metallization schemes for radio frequency microelectromechanical system switches

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2003-07, Vol.21 (4), p.1172-1177

2003

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Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors

Journal of applied physics, 1996-01, Vol.79 (1), p.540-544

1996

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S-band operation of SiC power MESFET with 20 W (4.4 W/mm) output power and 60%25 PAE

IEEE transactions on electron devices, 2004-06, Vol.51 (6), p.839-845

2004

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Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP

Journal of the Electrochemical Society, 1992-03, Vol.139 (3), p.831-835

1992

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Novel 1 kv, normally-off, vertically integrated, dual-gate VJFET power switch with a low 4.6 mωcm2 on-state resistance

2007 65th Annual Device Research Conference, 2007, p.29-30

2007

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On the Plastic Flow Beneath a Blunt Axisymmetric Indenter

Journal of engineering for industry, 1970-05, Vol.92 (2), p.480-492

1970

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Experimental development and incorporation of strain in p-type GaAsSb/InAlAs single metal heterostructure field effect transistors

Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129), 1998, p.127-130

1998

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8 kV Normally-off All-SiC Cascode Power Switch Using VJFETs

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, 2007, p.85-87

2007

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A user's guide to the encyclopedia of DNA elements (ENCODE)

Silicon Carbide Terahertz Emitting Devices

S-band operation of SiC power MESFET with 20 W (4.4 W/mm) output power and 60% PAE

A-10 Virginians Report Unequal Access to Appropriate Licensed Healthcare Providers for Concussion

Wet Chemical Digital Etching of GaAs at Room Temperature

Pseudomorphic SiC alloys formed by Ge ion implantation

A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation

Ultrathin delta doped GaAs and AlAs tunnel junctions as interdevice ohmic contacts

Investigation of alternative window materials for GaAs solar cells

Silicon Carbide Terahertz Emitting Devices: Groups in Nitrides, SiC and ZnO

Therapy of hepatitis C: Re‐treatment with alpha interferon

Lattice damage and atomic mixing induced by As++ implantation and thermal annealing in AlAs/GaAs multiple quantum-well structures

Base and collector resistances in heterojunction bipolar transistors

Simplified ohmic and Schottky contact formation for field effect transistors using the single layer integrated metal field effect transistor (SLIMFET) process

Emitter utilization in heterojunction bipolar transistors

A 6 to 16 GHz Linearized GaN Power Amplifier

Magneto-Hall characterization of delta-doped pseudomorphic high electron mobility transistor structures

Metallization schemes for radio frequency microelectromechanical system switches

Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors

S-band operation of SiC power MESFET with 20 W (4.4 W/mm) output power and 60%25 PAE

Etch Rates and Selectivities of Citric Acid/Hydrogen Peroxide on GaAs , Al0.3Ga0.7As , In0.2Ga0.8As , In0.53Ga0.47As , In0.52Al0.48As , and InP

Novel 1 kv, normally-off, vertically integrated, dual-gate VJFET power switch with a low 4.6 mωcm2 on-state resistance

On the Plastic Flow Beneath a Blunt Axisymmetric Indenter

Experimental development and incorporation of strain in p-type GaAsSb/InAlAs single metal heterostructure field effect transistors

8 kV Normally-off All-SiC Cascode Power Switch Using VJFETs

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