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Understanding electrostatic interaction on strong cation-exchanger via co-ion valency effects

Separation and purification technology, 2024-08, Vol.342, p.126860, Article 126860

2024

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Brain cholinesterase activity and the behavior of rats after perinatal exposure to dichlorvos

Ciência rural, 2006-03, Vol.36 (2)

Souza, J.P. de

2006

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Histopathological changes in the gill, liver and kidney of pacu (Piaractus mesopotamicus, Holmberg, 1887) exposed to various concentrations of trichlorfon

Journal of applied ichthyology, 2009-02, Vol.25 (1), p.124-127

2009

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Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates

Applied physics letters, 2005-11, Vol.87 (22), p.221911-221911-3

2005

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High-Performance [Formula Omitted] -Channel MOSFETs With High-[Formula Omitted] Gate Dielectrics and [Formula Omitted]-Si Passivation

IEEE electron device letters, 2009-01, Vol.30 (1), p.5

2009

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High-Performance \hbox\hbox\hbox -Channel MOSFETs With High- \kappa Gate Dielectrics and \alpha-Si Passivation

IEEE electron device letters, 2009-01, Vol.30 (1), p.5-7

2009

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Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature

Journal of applied physics, 2005-04, Vol.97 (7), p.076106-076106-3

2005

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Electrical resistivity of acceptor carbon in GaAs

Journal of applied physics, 2004-03, Vol.95 (5), p.2532-2535

2004

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Thermal stability of the electrical isolation in n -type gallium arsenide layers irradiated with H, He, and B ions

Journal of applied physics, 1997-01, Vol.81 (2), p.650-655

1997

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Range profiles of implanted Bi and Au in amorphous silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1985-01, Vol.6 (3), p.453-458

1985

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Numerical analysis of filling stage during powder injection moulding: effects of feedstock rheology and mixing conditions

Powder metallurgy, 2004-06, Vol.47 (2), p.137-143

2004

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Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stability

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-04, Vol.175, p.235-240

2001

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High Performance Long-and Short-Channel In0.7Ga0.3As-channel MOSFETs

2008 Device Research Conference, 2008, p.41-42

2008

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Range parameters of implanted into Si and SiO2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-04, Vol.175-177, p.46-50

2001

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Range parameters of [formula omitted] implanted into Si and SiO 2

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001, Vol.175, p.46-50

2001

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Damage accumulation during 11B +, 12C + and 14N + implantations in Si

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997-02, Vol.122 (2), p.293-297

1997

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Amorphization/templated Recrystallization (ATR) Method for Hybrid Orientation Substrates

MRS proceedings, 2006, Vol.913, Article D1.1

2006

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In situ composites based on blends of a poly(ether imide) and thermotropic liquid crystalline polymers under injection moulding conditions

Polymer (Guilford), 1996-05, Vol.37 (10), p.1985-1997

1996

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High mobility III-V channel MOSFETs for post-Si CMOS applications

2009 IEEE International Conference on IC Design and Technology, 2009, p.161-164

2009

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Energy dependence of the Z1-range oscillation effect in silicon

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1986-04, Vol.15 (1), p.58-60

1986

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Enhancement-mode In0.70Ga0.30As-channel MOSFETs with ALD Al2O3

2007 65th Annual Device Research Conference, 2007, p.209-210

2007

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Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)

2008 Symposium on VLSI Technology, 2008, p.178-179

2008

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Thermal stability of the electrical isolation in n-type GaAs: Effects of damage and carrier concentrations

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1997, Vol.122 (1), p.51-54

1997

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The effect of miscibility on the morphology and properties of blends of poly(ether imide) with liquid crystalline polymers

Polymer (Guilford), 1995, Vol.36 (2), p.259-266

1995

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Ion beam mixing of Fe thin film and Si substrate

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1995-09, Vol.103 (1), p.56-59

1995

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Understanding electrostatic interaction on strong cation-exchanger via co-ion valency effects

Brain cholinesterase activity and the behavior of rats after perinatal exposure to dichlorvos

Histopathological changes in the gill, liver and kidney of pacu (Piaractus mesopotamicus, Holmberg, 1887) exposed to various concentrations of trichlorfon

Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates

High-Performance [Formula Omitted] -Channel MOSFETs With High-[Formula Omitted] Gate Dielectrics and [Formula Omitted]-Si Passivation

High-Performance \hbox\hbox\hbox -Channel MOSFETs With High- \kappa Gate Dielectrics and \alpha-Si Passivation

Spatial separation of vacancy and interstitial defects formed in Si by oxygen-ion irradiation at elevated temperature

Electrical resistivity of acceptor carbon in GaAs

Thermal stability of the electrical isolation in n -type gallium arsenide layers irradiated with H, He, and B ions

Range profiles of implanted Bi and Au in amorphous silicon

Numerical analysis of filling stage during powder injection moulding: effects of feedstock rheology and mixing conditions

Electrical isolation of n-type InP by ion bombardment: Dose dependence and thermal stability

High Performance Long-and Short-Channel In0.7Ga0.3As-channel MOSFETs

Range parameters of implanted into Si and SiO2

Range parameters of [formula omitted] implanted into Si and SiO 2

Damage accumulation during 11B +, 12C + and 14N + implantations in Si

Amorphization/templated Recrystallization (ATR) Method for Hybrid Orientation Substrates

In situ composites based on blends of a poly(ether imide) and thermotropic liquid crystalline polymers under injection moulding conditions

High mobility III-V channel MOSFETs for post-Si CMOS applications

Energy dependence of the Z1-range oscillation effect in silicon

Enhancement-mode In0.70Ga0.30As-channel MOSFETs with ALD Al2O3

Higher hole mobility induced by twisted Direct Silicon Bonding (DSB)

Thermal stability of the electrical isolation in n-type GaAs: Effects of damage and carrier concentrations

The effect of miscibility on the morphology and properties of blends of poly(ether imide) with liquid crystalline polymers

Ion beam mixing of Fe thin film and Si substrate

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