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Early stage of CVD graphene synthesis on Ge(001) substrate

Carbon (New York), 2018-08, Vol.134, p.183-188

2018

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SiGe intermixing in Ge/Si(100) islands

Applied physics letters, 2001-01, Vol.78 (3), p.303-305

2001

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Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth

ACS applied materials & interfaces, 2016-12, Vol.8 (48), p.33083-33090

2016

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Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)

Applied physics letters, 2021-10, Vol.119 (15)

2021

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Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides

Optics express, 2020-02, Vol.28 (4), p.4786-4800

2020

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High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain

Journal of applied physics, 2012-04, Vol.111 (7), p.073518-073518-6

2012

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Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Journal of applied physics, 2020-12, Vol.128 (21)

2020

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Abrupt changes in the graphene on Ge(001) system at the onset of surface melting

Carbon (New York), 2019-04, Vol.145, p.345-351

2019

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On-chip infrared photonics with Si-Ge-heterostructures: What is next?

APL photonics, 2022-05, Vol.7 (5), p.050901-050901-20

2022

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Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments

Journal of physics. Condensed matter, 2007-06, Vol.19 (22), p.225001-225001 (22)

2007

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Intermixing-promoted scaling of Ge/Si(100) island sizes

Journal of applied physics, 2002-07, Vol.92 (1), p.614-619

2002

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Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Surface science, 2019-05, Vol.683, p.31-37

2019

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Strain relaxation in high Ge content SiGe layers deposited on Si

Journal of applied physics, 2010-03, Vol.107 (6), p.063504-063504-8

2010

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Commensurability and Stability in Nonperiodic Systems

Proceedings of the National Academy of Sciences - PNAS, 2005-03, Vol.102 (11), p.3898-3902

2005

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Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift

Nanotechnology, 2012-11, Vol.23 (46), p.465708-465708

2012

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Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films

Microelectronic engineering, 2015-08, Vol.144, p.19-22

2015

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Modeling picosecond electron dynamics of pump-probe intersubband spectroscopy in n -type Ge/SiGe quantum wells

Physical review. B, Condensed matter and materials physics, 2012-11, Vol.86 (20), Article 205317

2012

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Electron-phonon coupling in n -type Ge two-dimensional systems

Physical review. B, 2020-11, Vol.102 (20), p.205302, Article 205302

2020

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Imaging the structure of the interface between symmetries interconnected by a discontinuous transition

Solid state communications, 2003-10, Vol.128 (2), p.51-56

2003

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Epi-cleaning of Ge/GeSn heterostructures

Journal of applied physics, 2015-01, Vol.117 (4)

2015

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Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells

Physical review. B, 2018-11, Vol.98 (19), Article 195310

2018

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Conduction band intersubband transitions in Ge/SiGe quantum wells

Applied physics letters, 2009-08, Vol.95 (5), p.051918-051918-3

2009

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Ordering self-assembled islands without substrate patterning

Applied physics letters, 2003-03, Vol.82 (11), p.1772-1774

2003

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Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures

Applied physics letters, 2005-12, Vol.87 (26), p.261919-261919-3

2005

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Self-ordering of a Ge island single layer induced by Si overgrowth

Physical review letters, 2006-03, Vol.96 (10), p.106102-106102, Article 106102

2006

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Early stage of CVD graphene synthesis on Ge(001) substrate

SiGe intermixing in Ge/Si(100) islands

Investigating the CVD Synthesis of Graphene on Ge(100): toward Layer-by-Layer Growth

Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)

Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides

High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain

Controlling the relaxation mechanism of low strain Si1−xGex/Si(001) layers and reducing the threading dislocation density by providing a preexisting dislocation source

Abrupt changes in the graphene on Ge(001) system at the onset of surface melting

On-chip infrared photonics with Si-Ge-heterostructures: What is next?

Vertical and lateral ordering of Ge islands grown on Si(001): theory and experiments

Intermixing-promoted scaling of Ge/Si(100) island sizes

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Strain relaxation in high Ge content SiGe layers deposited on Si

Commensurability and Stability in Nonperiodic Systems

Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift

Morphological and spectroscopic analysis of argon- and oxygen-ions treated thin ferritin films

Modeling picosecond electron dynamics of pump-probe intersubband spectroscopy in n -type Ge/SiGe quantum wells

Electron-phonon coupling in n -type Ge two-dimensional systems

Imaging the structure of the interface between symmetries interconnected by a discontinuous transition

Epi-cleaning of Ge/GeSn heterostructures

Photoluminescence study of interband transitions in few-layer, pseudomorphic, and strain-unbalanced Ge/GeSi multiple quantum wells

Conduction band intersubband transitions in Ge/SiGe quantum wells

Ordering self-assembled islands without substrate patterning

Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures

Self-ordering of a Ge island single layer induced by Si overgrowth

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