UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 29

Sortiert nach

Effect of test structure on electromigration characteristics in three-dimensional through silicon via stacked devices

Japanese Journal of Applied Physics, 2015-05, Vol.54 (5S), p.5

2015

Volltextzugriff (PDF)

Simulation of Cu pad expansion in wafer-to-wafer Cu/SiCN hybrid bonding

Microelectronics and reliability, 2022-11, Vol.138, p.114716, Article 114716

2022

Volltextzugriff (PDF)

Simulation of Cu bulge-out by cyclic Cu surface diffusion FEM in Cu/SiCN hybrid bonding

2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2023, p.1-5

2023

Volltextzugriff (PDF)

Plasmonic properties of silicon nitride encapsulated copper

Optical materials express, 2024-07

2024

Volltextzugriff (PDF)

Effects of isothermal storage on grain structure of Cu/Sn/Cu microbump interconnects for 3D stacking

Microelectronics and reliability, 2019-11, Vol.102, p.113296, Article 113296

2019

Volltextzugriff (PDF)

A photo‐elastic microscopy study of the temperature dependency of stress induced by through silicon vias in silicon

Physica status solidi. C, 2017-07, Vol.14 (7), p.n/a

2017

Volltextzugriff (PDF)

On the impossibility of multi-pass equal-channel angular drawing

Scripta materialia, 2002-07, Vol.47 (1), p.13-18

2002

Volltextzugriff (PDF)

Microstructure simulation of grain growth in Cu through silicon vias using phase-field modeling

Microelectronics and reliability, 2015-04, Vol.55 (5), p.765-770

2015

Volltextzugriff (PDF)

Impact of via density and passivation thickness on the mechanical integrity of advanced Back-End-Of-Line interconnects

Microelectronics and reliability, 2017-12, Vol.79, p.297-305

2017

Volltextzugriff (PDF)

Impact of post-plating anneal and through-silicon via dimensions on Cu pumping

2013 IEEE 63rd Electronic Components and Technology Conference, 2013, p.586-591

2013

Volltextzugriff (PDF)

Simulation of Bulge-Out Mechanism Enabling Sub-0.5 μm Scaling of Hybrid Wafer-to-Wafer Bonding

2024 IEEE 74th Electronic Components and Technology Conference (ECTC), 2024, p.1853-1858

2024

Volltextzugriff (PDF)

Reliability Investigations of Polymer Based Redistribution Layers (RDL) Protected by a Mold Layer

2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, p.1080-1084

2023

Volltextzugriff (PDF)

Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.32.4.1-32.4.4

2017

Volltextzugriff (PDF)

Impact of Cu TSVs on BEOL metal and dielectric reliability

2014 IEEE International Reliability Physics Symposium, 2014, p.3E.1.1-3E.1.5

2014

Volltextzugriff (PDF)

New Cu "Bulge-Out" Mechanism Supporting SubMicron Scaling of Hybrid Wafer-to-Wafer Bonding

2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, p.109-113

2023

Volltextzugriff (PDF)

Reliability concerns in copper TSV's: Methods and results

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2012, p.1-5

2012

Volltextzugriff (PDF)

The Challenges and Solutions of Cu/SiCN Wafer-to-Wafer Hybrid Bonding Scaling Down to 400nm Pitch

2023 International Electron Devices Meeting (IEDM), 2023, p.1-4

2023

Volltextzugriff (PDF)

Structural Evolution of IF Steel during Annealing after ECAP

Materials science forum, 2004-01, Vol.467-470, p.1295-1300

2004

Volltextzugriff (PDF)

Composite polymer core – ceria shell abrasive particles during silicon oxide CMP

MRS proceedings, 2007, Vol.991, Article 0991-C08-04

2007

Volltextzugriff (PDF)

Correlation between Cu microstructure and TSV Cu pumping

2014 IEEE 64th Electronic Components and Technology Conference (ECTC), 2014, p.613-619

2014

Volltextzugriff (PDF)

Reliability Challenges in Advanced 3D Technologies: The Case of Through Silicon Vias and SiCN-SiCN Wafer-to-Wafer Hybrid-Bonding Technologies

IEEE transactions on device and materials reliability, 2023-12, Vol.23 (4), p.615-622

2023

Volltextzugriff (PDF)

Cu TSV Stress: Avoiding Cu Protrusion and Impact on Devices

Handbook of 3D Integration, 2014, p.365-378

2014

Volltextzugriff (PDF)

Simulation of Cu pumping during TSV fabrication

2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2013, p.1-4

2013

Volltextzugriff (PDF)

Thermal compression bonding of 20 μm pitch micro bumps with pre-applied underfill - Process and reliability

2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC), 2015, p.1-5

2015

Volltextzugriff (PDF)

Statistical Distribution of Through-Silicon via Cu Pumping

IEEE transactions on device and materials reliability, 2017-09, Vol.17 (3), p.549-559

2017

Volltextzugriff (PDF)

1 – 25 von 29

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(11)
Mit Volltextzugriff
(26)

Publikationsform

Sprache

Englisch
(29)
Japanisch
(6)

Erscheinungsjahr

n.n

Thema

Science & Technology
(23)
Technology
(21)
Engineering
(19)
Engineering, Electrical & Electronic
(18)
Physical Sciences
(12)
Physics
(12)
Physics, Applied
(11)
Annealing
(8)
Reliability
(8)
Through-Silicon Vias
(8)
Bonding
(7)
Materials Science
(6)
Materials Science, Multidisciplinary
(6)
Nanoscience & Nanotechnology
(6)
Science & Technology - Other Topics
(6)
Silicon
(6)
Stress
(5)
Copper
(4)
Dielectrics
(4)
Surface Topography
(4)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Effect of test structure on electromigration characteristics in three-dimensional through silicon via stacked devices

Simulation of Cu pad expansion in wafer-to-wafer Cu/SiCN hybrid bonding

Simulation of Cu bulge-out by cyclic Cu surface diffusion FEM in Cu/SiCN hybrid bonding

Plasmonic properties of silicon nitride encapsulated copper

Effects of isothermal storage on grain structure of Cu/Sn/Cu microbump interconnects for 3D stacking

A photo‐elastic microscopy study of the temperature dependency of stress induced by through silicon vias in silicon

On the impossibility of multi-pass equal-channel angular drawing

Microstructure simulation of grain growth in Cu through silicon vias using phase-field modeling

Impact of via density and passivation thickness on the mechanical integrity of advanced Back-End-Of-Line interconnects

Impact of post-plating anneal and through-silicon via dimensions on Cu pumping

Simulation of Bulge-Out Mechanism Enabling Sub-0.5 μm Scaling of Hybrid Wafer-to-Wafer Bonding

Reliability Investigations of Polymer Based Redistribution Layers (RDL) Protected by a Mold Layer

Scalable, sub 2μm pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology

Impact of Cu TSVs on BEOL metal and dielectric reliability

New Cu "Bulge-Out" Mechanism Supporting SubMicron Scaling of Hybrid Wafer-to-Wafer Bonding

Reliability concerns in copper TSV's: Methods and results

The Challenges and Solutions of Cu/SiCN Wafer-to-Wafer Hybrid Bonding Scaling Down to 400nm Pitch

Structural Evolution of IF Steel during Annealing after ECAP

Composite polymer core – ceria shell abrasive particles during silicon oxide CMP

Correlation between Cu microstructure and TSV Cu pumping

Reliability Challenges in Advanced 3D Technologies: The Case of Through Silicon Vias and SiCN-SiCN Wafer-to-Wafer Hybrid-Bonding Technologies

Cu TSV Stress: Avoiding Cu Protrusion and Impact on Devices

Simulation of Cu pumping during TSV fabrication

Thermal compression bonding of 20 μm pitch micro bumps with pre-applied underfill - Process and reliability

Statistical Distribution of Through-Silicon via Cu Pumping

Suchergebnisse filtern