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Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2583-2588

2019

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Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

IEEE electron device letters, 2013-04, Vol.34 (4), p.490-492

2013

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InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

IEEE electron device letters, 2011-11, Vol.32 (11), p.1537-1539

2011

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High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

IEEE electron device letters, 2011-02, Vol.32 (2), p.143-145

2011

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Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

Journal of applied physics, 2014-04, Vol.115 (16)

2014

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Punch-through in short-channel AlGaN/GaN HFETs

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.395-398

2006

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Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

IEEE electron device letters, 2006-01, Vol.27 (1), p.7-9

2006

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Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

Thin solid films, 2013-05, Vol.534, p.442-445

2013

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Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Journal of applied physics, 2014-08, Vol.116 (8)

2014

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193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

Applied physics letters, 2008-02, Vol.92 (5), p.053501-053501-3

2008

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Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

Diamond and related materials, 2007-02, Vol.16 (2), p.262-266

2007

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Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Applied physics letters, 2011-10, Vol.99 (18), p.182109-182109-3

2011

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Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2178-2185

2009

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GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.498-501

2014

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Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.1083-1087

2012

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Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44 - 360 nm : Photoemission assessments

Applied physics letters, 2008, Vol.92 (2), p.022108-022108-3

2008

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Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Microelectronics and reliability, 2016-09, Vol.64, p.594-598

2016

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Electron transport properties of gallium nitride for microscopic power device modelling

Journal of physics. Conference series, 2009-11, Vol.193 (1), p.012005-1-4

2009

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Theoretical study of Lamb acoustic waves characteristics in a AlN/diamond composite membranes for Super High Frequency range operating devices

Diamond and related materials, 2012-02, Vol.22, p.66-69

2012

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AlGaN/GaN MISHEMT with hBN as gate dielectric

Diamond and related materials, 2009-05, Vol.18 (5), p.1039-1042

2009

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Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies

Thin solid films, 2008-04, Vol.516 (12), p.4122-4127

2008

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Loss characteristics in coplanar propagation waveguides fabricated on IIa diamond substrates

Diamond and related materials, 2009-05, Vol.18 (5), p.881-883

2009

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MMICs time-domain electrical physical simulator adapted to the parallel computation

International journal of numerical modelling, 2009-05, Vol.22 (3), p.279-296

2009

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AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2843-2848

2007

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Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

Microelectronics and reliability, 2009, Vol.49 (9), p.1216-1221

2009

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Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters

Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

Punch-through in short-channel AlGaN/GaN HFETs

Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate

Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44 - 360 nm : Photoemission assessments

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Electron transport properties of gallium nitride for microscopic power device modelling

Theoretical study of Lamb acoustic waves characteristics in a AlN/diamond composite membranes for Super High Frequency range operating devices

AlGaN/GaN MISHEMT with hBN as gate dielectric

Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies

Loss characteristics in coplanar propagation waveguides fabricated on IIa diamond substrates

MMICs time-domain electrical physical simulator adapted to the parallel computation

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs

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