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Strain relief by periodic misfit arrays for low defect density GaSb on GaAs

Applied physics letters, 2006-03, Vol.88 (13), p.131911-131911-3

2006

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Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

Nanoscale research letters, 2009-08, Vol.4 (12), p.1458-1462

2009

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Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

Journal of electronic materials, 2014-04, Vol.43 (4), p.926-930

2014

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Growth mechanisms of highly mismatched AlSb on a Si substrate

Applied physics letters, 2005-01, Vol.86 (3), p.034105-034105-3

2005

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Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

Nanoscale research letters, 2009-08, Vol.4 (12), p.1458-1462, Article 1458

2009

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2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer

Applied physics letters, 2004-03, Vol.84 (12), p.2058-2060

2004

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InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers

Journal of applied physics, 2003-08, Vol.94 (3), p.2133-2135

2003

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Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate

Electronics letters, 2006-03, Vol.42 (6), p.350-352

2006

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Anisotropy of selective epitaxy in nanoscale-patterned growth: GaAs nanowires selectively grown on a SiO2-patterned (001) substrate by molecular-beam epitaxy

Journal of applied physics, 2005-12, Vol.98 (11)

2005

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2.5–3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AlInSb metamorphic buffer layers

Journal of applied physics, 2003-03, Vol.93 (6), p.3177-3181

2003

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Activation energies for Te and Be in metamorphically grown AlSb and InxAl1−xSb layers

Applied physics letters, 2005-08, Vol.87 (9)

2005

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Heteroepitaxial selective growth of InxGa1−xAs on SiO2-patterned GaAs(001) by molecular beam epitaxy

Journal of applied physics, 2004-11, Vol.96 (9), p.4856-4865

2004

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Epitaxial growth of a nanoscale, vertically faceted, one-dimensional,high-aspect ratio grating in III-V materials for integrated photonics

Applied physics letters, 2005-08, Vol.87 (7), p.071110-071110-3

2005

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Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate

Electronics letters, 2005-04, Vol.41 (9), p.531-532

2005

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Selective growth and associated faceting and lateral overgrowth of GaAs on a nanoscale limited area bounded by a SiO2 mask in molecular beam epitaxy

Journal of applied physics, 2002-12, Vol.92 (11), p.6567-6571

2002

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GaAs on Si(111)-crystal shape and strain relaxation in nanoscale patterned growth

Applied physics letters, 2005-07, Vol.87 (2), p.023101-023101-3

2005

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Molecular-beam epitaxial growth of one-dimensional rows of InAs quantum dots on nanoscale-patterned GaAs

Applied physics letters, 2001-10, Vol.79 (16), p.2630-2632

2001

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Growth of room-temperature “arsenic free” infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers

Applied physics letters, 2003-03, Vol.82 (11), p.1658-1660

2003

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Analysis of atomic structure in InAs quantum dashes grown on AlGaAsSb metamorphic buffers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-05, Vol.22 (3), p.1529-1533

2004

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Dynamical faceting and nanoscale lateral growth of GaAs by molecular beam epitaxy

Journal of crystal growth, 2002-05, Vol.240 (3), p.333-339

2002

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Midwave (4 μm) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions

Applied physics letters, 1994-02, Vol.64 (7), p.812-814

1994

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Multiple-wavelength emission from InxGa1-xAs-GaAs quantum wells grown on a nanoscale faceted GaAs substrate by molecular beam epitaxy

IEEE journal of selected topics in quantum electronics, 2002-09, Vol.8 (5), p.972

2002

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Formation of cavities in GaAs and InGaAs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2000-04, Vol.160 (4), p.476-498

2000

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Influence of Oxygen on the Iridium Silicide Formation by Rapid Thermal Annealing

MRS proceedings, 1994, Vol.299, Article 325

1994

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Extending HgCdTe Photovoltaic Detector Technology to Cutoff Wavelengths of 17 μm

MRS proceedings, 1994, Vol.299, p.85, Article 85

1994

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Strain relief by periodic misfit arrays for low defect density GaSb on GaAs

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

Growth mechanisms of highly mismatched AlSb on a Si substrate

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer

InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers

Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate

Anisotropy of selective epitaxy in nanoscale-patterned growth: GaAs nanowires selectively grown on a SiO2-patterned (001) substrate by molecular-beam epitaxy

2.5–3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AlInSb metamorphic buffer layers

Activation energies for Te and Be in metamorphically grown AlSb and InxAl1−xSb layers

Heteroepitaxial selective growth of InxGa1−xAs on SiO2-patterned GaAs(001) by molecular beam epitaxy

Epitaxial growth of a nanoscale, vertically faceted, one-dimensional,high-aspect ratio grating in III-V materials for integrated photonics

Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate

Selective growth and associated faceting and lateral overgrowth of GaAs on a nanoscale limited area bounded by a SiO2 mask in molecular beam epitaxy

GaAs on Si(111)-crystal shape and strain relaxation in nanoscale patterned growth

Molecular-beam epitaxial growth of one-dimensional rows of InAs quantum dots on nanoscale-patterned GaAs

Growth of room-temperature “arsenic free” infrared photovoltaic detectors on GaSb substrate using metamorphic InAlSb digital alloy buffer layers

Analysis of atomic structure in InAs quantum dashes grown on AlGaAsSb metamorphic buffers

Dynamical faceting and nanoscale lateral growth of GaAs by molecular beam epitaxy

Midwave (4 μm) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions

Multiple-wavelength emission from InxGa1-xAs-GaAs quantum wells grown on a nanoscale faceted GaAs substrate by molecular beam epitaxy

Formation of cavities in GaAs and InGaAs

Influence of Oxygen on the Iridium Silicide Formation by Rapid Thermal Annealing

Extending HgCdTe Photovoltaic Detector Technology to Cutoff Wavelengths of 17 μm

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