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Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials

Journal of crystal growth, 2007-05, Vol.303 (2), p.449-455

2007

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Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

Infrared physics & technology, 2011-05, Vol.54 (3), p.252-257

2011

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Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.716-723

2009

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Formation and Optical Characteristics of Type-II Strain-Relieved GaSb/GaAs Quantum Dots by Using an Interfacial Misfit Growth Mode

IEEE transactions on nanotechnology, 2009-03, Vol.8 (2), p.269-274

2009

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Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate

Electronics letters, 2006-03, Vol.42 (6), p.350-352

2006

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Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications

Journal of crystal growth, 2016-04, Vol.439, p.104-109

2016

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Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate

Applied physics letters, 2010-08, Vol.97 (5), p.051109-051109-3

2010

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Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8 μm) infrared detection

Journal of crystal growth, 2009-03, Vol.311 (7), p.1901-1904

2009

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Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

Journal of electronic materials, 2014-04, Vol.43 (4), p.926-930

2014

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Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate

IEEE journal of selected topics in quantum electronics, 2006-11, Vol.12 (6), p.1636-1641

2006

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Digital alloy AlAsSb/AlGaAsSb distributed Bragg reflectors lattice matched to InP for 1.3 – 1.55 µm wavelength range

Electronics letters, 1995-07, Vol.31 (15), p.1247-1248

1995

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Room-Temperature Operation of Buffer-Free GaSb-AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 \mum

IEEE photonics technology letters, 2007-10, Vol.19 (20), p.1628-1630

2007

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Heterojunction bandgap engineered photodetector based on type-II InAs/GaSb superlattice for single color and bicolor infrared detection

Infrared physics & technology, 2011-05, Vol.54 (3), p.273-277

2011

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High-detectivity (>110/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detector

IEEE electron device letters, 1990-01, Vol.11 (1), p.54-56

1990

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Room-Temperature Operation of Buffer-Free GaSb-AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 [mu]m

IEEE photonics technology letters, 2007-10, Vol.19 (20), p.1628-1630

2007

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Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates

Electronics letters, 2007-02, Vol.43 (4), p.244-245

2007

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Epitaxial growth of a nanoscale, vertically faceted, one-dimensional,high-aspect ratio grating in III-V materials for integrated photonics

Applied physics letters, 2005-08, Vol.87 (7), p.071110-071110-3

2005

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Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate

Electronics letters, 2005-04, Vol.41 (9), p.531-532

2005

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1.54 [micro sign]m GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays

Electronics letters, 2007, Vol.43 (22), p.1198

2007

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Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array

Journal of electronic materials, 2008-12, Vol.37 (12), p.1758-1763

2008

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Gallium phosphide junctions with low leakage for energy conversion and near ultraviolet detectors

Journal of applied physics, 1991-05, Vol.69 (9), p.6500-6505

1991

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GaAs on Si(111)-crystal shape and strain relaxation in nanoscale patterned growth

Applied physics letters, 2005-07, Vol.87 (2), p.023101-023101-3

2005

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Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors

IEEE electron device letters, 1989-04, Vol.10 (4), p.150-152

1989

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Anisotropy of selective epitaxy in nanoscale-patterned growth: GaAs nanowires selectively grown on a SiO{sub 2}-patterned (001) substrate by molecular-beam epitaxy

Journal of applied physics, 2005-12, Vol.98 (11)

2005

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Multiple-wavelength emission from In/sub x/Ga/sub 1-x/As-GaAs quantum wells grown on a nanoscale faceted GaAs substrate by molecular beam epitaxy

IEEE journal of selected topics in quantum electronics, 2002-09, Vol.8 (5), p.972-983

2002

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Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials

Passivation of long-wave infrared InAs/GaSb strained layer superlattice detectors

Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

Formation and Optical Characteristics of Type-II Strain-Relieved GaSb/GaAs Quantum Dots by Using an Interfacial Misfit Growth Mode

Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate

Development of III-Sb metamorphic DBR membranes on InP for vertical cavity laser applications

Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate

Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (∼8 μm) infrared detection

Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

Room-Temperature Optically Pumped (Al)GaSb Vertical-Cavity Surface-Emitting Laser Monolithically Grown on an Si(1 0 0) Substrate

Digital alloy AlAsSb/AlGaAsSb distributed Bragg reflectors lattice matched to InP for 1.3 – 1.55 µm wavelength range

Room-Temperature Operation of Buffer-Free GaSb-AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 \mum

Heterojunction bandgap engineered photodetector based on type-II InAs/GaSb superlattice for single color and bicolor infrared detection

High-detectivity (>110/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detector

Room-Temperature Operation of Buffer-Free GaSb-AlGaSb Quantum-Well Diode Lasers Grown on a GaAs Platform Emitting at 1.65 [mu]m

Monolithically integrated III-Sb CW super-luminal light emitting diodes on non-miscut Si (100) substrates

Epitaxial growth of a nanoscale, vertically faceted, one-dimensional,high-aspect ratio grating in III-V materials for integrated photonics

Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate

1.54 [micro sign]m GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays

Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array

Gallium phosphide junctions with low leakage for energy conversion and near ultraviolet detectors

GaAs on Si(111)-crystal shape and strain relaxation in nanoscale patterned growth

Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors

Anisotropy of selective epitaxy in nanoscale-patterned growth: GaAs nanowires selectively grown on a SiO{sub 2}-patterned (001) substrate by molecular-beam epitaxy

Multiple-wavelength emission from In/sub x/Ga/sub 1-x/As-GaAs quantum wells grown on a nanoscale faceted GaAs substrate by molecular beam epitaxy

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