UB Paderborn / Katalog / Suche / in CDI

Formation of the UV Spectrum of Molecular Hydrogen in the Sun

The Astrophysical journal, 2018-03, Vol.855 (2), p.134

2018

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On the current transport mechanism in a metal—insulator—semiconductor (MIS) diode

Solid-state electronics, 1986-05, Vol.29 (5), p.555-560

1986

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Modelling of silicon epitaxy at low pressure

Thin solid films, 1994-03, Vol.239 (2), p.225-228

1994

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On the series resistance of a Schottky diode with cross strip anode

Solid-state electronics, 1995-04, Vol.38 (4), p.937-938

1995

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Improved model of silicon epitaxial growth by VPE

International journal of electronics, 1992-01, Vol.72 (1), p.103-110

1992

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Properties of amorphous Bi2S3-crystalline silicon heterojunctions

Solid-state electronics, 1992-07, Vol.35 (7), p.1027-1029

1992

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On the barrier height of a metal-semiconductor contact with a thin interfacial layer

Solid-state electronics, 1985-01, Vol.28 (8), p.831-836

1985

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Modelling of epitaxial growth rate of silicon by vapour phase epitaxy

Microelectronics, 1990-09, Vol.21 (5), p.29-39

1990

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Effect of inversion on barrier height in a metal-SiO2-Si tunnel system

Solid-state electronics, 1984-01, Vol.27 (12), p.1057-1060

1984

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On the transit time of polysilicon emitter transistors

Solid-state electronics, 1999-02, Vol.43 (2), p.189-197

1999

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On the condition of inversion in an MIS tunnel structure

Solid-state electronics, 1986-09, Vol.29 (9), p.991-994

1986

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On the dependence of cut-off frequency of a Schottky diode on epilayer doping

Solid-state electronics, 1994, Vol.37 (1), p.192-194

1994

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A suggested method for the determination of the charge density in the interfacial layer of a schottky-barrier MIS diode

Solid-state electronics, 1984-01, Vol.27 (4), p.393-393

1984

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Analysis of a non-uniformly doped MPN silicon Schottky barrier solar cell

Solid-state electronics, 1983-01, Vol.26 (4), p.353-359

1983

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Characteristics of metal-semiconductor contacts fabricated by the electroless deposition method

Solid-state electronics, 1980-01, Vol.23 (8), p.905-907

1980

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On the open-circuit voltage of a Schottky-barrier MIS solar cell

Solid-state electronics, 1982-01, Vol.25 (12), p.1205-1206

1982

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Effect of non-uniformly doped surface layer on the barrier height of a Schottky contact

Solid-state electronics, 1980-09, Vol.23 (9), p.949-952

1980

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Effect of the presence of an inversion layer in an MPN structure

Solid-state electronics, 1982-01, Vol.25 (2), p.169-173

1982

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Study of a buried sin +P homojunction solar cell

Solid-state electronics, 1987-02, Vol.30 (2), p.155-159

1987

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On the determination of the neutral level and charge density in the interfacial layer of a MIS diode

Solid-state electronics, 1982-01, Vol.25 (5), p.431-432

1982

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Modelling of silicon epitaxy using silicon tetrachloride as the source

Microelectronics, 1995-09, Vol.26 (6), p.507-514

1995

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Electrochemically deposited Schottky contacts of In, Cd and InCd alloy

Solid-state electronics, 1980-01, Vol.23 (7), p.793-795

1980

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On the variation of cut-off frequency at high injection level with emitter end concentration of a diffused base transistor

Solid-state electronics, 1974-01, Vol.17 (10), p.1108-1110

1974

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Comments on "High frequency breakdown in diffused transistors"

IEEE transactions on electron devices, 1972-11, Vol.19 (11), p.1225-1225

1972

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On the determination of the emitter voltage fall time of a unijunction transistor

International journal of electronics, 1970-06, Vol.28 (6), p.597-600

1970

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Formation of the UV Spectrum of Molecular Hydrogen in the Sun

On the current transport mechanism in a metal—insulator—semiconductor (MIS) diode

Modelling of silicon epitaxy at low pressure

On the series resistance of a Schottky diode with cross strip anode

Improved model of silicon epitaxial growth by VPE

Properties of amorphous Bi2S3-crystalline silicon heterojunctions

On the barrier height of a metal-semiconductor contact with a thin interfacial layer

Modelling of epitaxial growth rate of silicon by vapour phase epitaxy

Effect of inversion on barrier height in a metal-SiO2-Si tunnel system

On the transit time of polysilicon emitter transistors

On the condition of inversion in an MIS tunnel structure

On the dependence of cut-off frequency of a Schottky diode on epilayer doping

A suggested method for the determination of the charge density in the interfacial layer of a schottky-barrier MIS diode

Analysis of a non-uniformly doped MPN silicon Schottky barrier solar cell

Characteristics of metal-semiconductor contacts fabricated by the electroless deposition method

On the open-circuit voltage of a Schottky-barrier MIS solar cell

Effect of non-uniformly doped surface layer on the barrier height of a Schottky contact

Effect of the presence of an inversion layer in an MPN structure

Study of a buried sin +P homojunction solar cell

On the determination of the neutral level and charge density in the interfacial layer of a MIS diode

Modelling of silicon epitaxy using silicon tetrachloride as the source

Electrochemically deposited Schottky contacts of In, Cd and InCd alloy

On the variation of cut-off frequency at high injection level with emitter end concentration of a diffused base transistor

Comments on "High frequency breakdown in diffused transistors"

On the determination of the emitter voltage fall time of a unijunction transistor

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