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Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

Journal of crystal growth, 2018-12, Vol.504, p.1-6

2018

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Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

physica status solidi (b), 2002-02, Vol.229 (3), p.r1-r3

2002

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Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1)

physica status solidi (b), 2002-04, Vol.230 (2), p.R4-R6

2002

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Phonon structure of InN grown by atomic layer epitaxy

Solid state communications, 1999-01, Vol.110 (9), p.491-495

1999

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Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

Journal of crystal growth, 2021-01, Vol.554, p.125963, Article 125963

2021

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Lattice dynamics of cobalt orthoborate Co3(BO3)2 with kotoite structure

Journal of alloys and compounds, 2021-06, Vol.865, p.158797, Article 158797

2021

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Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates

Journal of crystal growth, 2017-11, Vol.477, p.207-211

2017

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Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on p,-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE. (XXV INTERNATIONAL SYMPOSIUM "NANOSTRUCTURES: PHYSICS AND TECHNOLOGY", SAINT PETERSBURG, RUSSIA, JUNE 26-30, 2017

Semiconductors (Woodbury, N.Y.), 2018-05, Vol.52 (5), p.667

2018

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Radiation-induced defects in n-type GaN and InN

Physica. B, Condensed matter, 2001-12, Vol.308, p.58-61

2001

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Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer

Applied physics letters, 2006-06, Vol.88 (25), p.253104-253104-3

2006

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Band Gap of Hexagonal InN and InGaN Alloys

physica status solidi (b), 2002-12, Vol.234 (3), p.787-795

2002

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New luminescence lines in nanodiamonds obtained by chemical vapor deposition

Physics of the solid state, 2017-12, Vol.59 (12), p.2407-2412

2017

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Oxidation of Zirconium and Zirconium Hydride Powders during Programmed Heating in Air

Universal journal of physics and application, 2017-12, Vol.11 (6), p.197-201

2017

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Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN/AlxGa1-xN Superlattices

physica status solidi (b), 2002-12, Vol.234 (3), p.975-979

2002

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Supersensitive graphene-based gas sensor

Technical physics, 2016-03, Vol.61 (3), p.453-457

2016

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Elastic strains and delocalized optical phonons in AlN/GaN superlattices

Semiconductors (Woodbury, N.Y.), 2016-08, Vol.50 (8), p.1043-1048

2016

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Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen

Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1537-1541

2017

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AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

Journal of crystal growth, 2009-03, Vol.311 (7), p.2080-2083

2009

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Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures

Technical physics, 2017-07, Vol.62 (7), p.1082-1086

2017

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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates

Semiconductors (Woodbury, N.Y.), 2016-05, p.699

2016

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InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Journal of crystal growth, 2001-02, Vol.222 (4), p.701-705

2001

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Raman scattering by surface polaritons in cubic GaN epitaxial layers

Solid state communications, 1997-11, Vol.104 (7), p.397-400

1997

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Behavior of electrically active point defects in irradiated MOCVD n-GaN

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.101-104

1999

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Correlations between electrical and optical properties for OMVPE InN

Journal of crystal growth, 2004-01, Vol.261 (2), p.275-279

2004

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Specific features of Raman spectra of III–V nanowhiskers

Physics of the solid state, 2011-07, Vol.53 (7), p.1431-1439

2011

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Growth of III-N/graphene heterostructures in single vapor phase epitaxial process

Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1)

Phonon structure of InN grown by atomic layer epitaxy

Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

Lattice dynamics of cobalt orthoborate Co3(BO3)2 with kotoite structure

Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates

Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on p,-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE. (XXV INTERNATIONAL SYMPOSIUM "NANOSTRUCTURES: PHYSICS AND TECHNOLOGY", SAINT PETERSBURG, RUSSIA, JUNE 26-30, 2017

Radiation-induced defects in n-type GaN and InN

Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer

Band Gap of Hexagonal InN and InGaN Alloys

New luminescence lines in nanodiamonds obtained by chemical vapor deposition

Oxidation of Zirconium and Zirconium Hydride Powders during Programmed Heating in Air

Raman Spectroscopy as a Tool for Characterization of Strained Hexagonal GaN/AlxGa1-xN Superlattices

Supersensitive graphene-based gas sensor

Elastic strains and delocalized optical phonons in AlN/GaN superlattices

Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in [n.sup.+]-GaN substrates

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Raman scattering by surface polaritons in cubic GaN epitaxial layers

Behavior of electrically active point defects in irradiated MOCVD n-GaN

Correlations between electrical and optical properties for OMVPE InN

Specific features of Raman spectra of III–V nanowhiskers

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