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Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes

Journal of applied physics, 2021-10, Vol.130 (13)

2021

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Compositional dependence of linear and nonlinear optical response in crystalline hafnium zirconium oxide thin films

Journal of applied physics, 2020-07, Vol.128 (3)

2020

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Oblique patterned etching of vertical silicon sidewalls

Applied physics letters, 2016-04, Vol.108 (14)

2016

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Stress dependent oxidation of sputtered niobium and effects on superconductivity

Journal of applied physics, 2014-02, Vol.115 (8)

2014

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Acute‐phase proteins in cats with obstructive feline lower urinary tract disease

Veterinary clinical pathology, 2022-03, Vol.51 (1), p.77-83

2022

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Applicability of the drainage effectiveness of Blake drains and Tenckhoff catheters in the peritoneal dialysis of healthy rabbits (Oryctolagus cuniculus)

Journal of veterinary emergency and critical care (San Antonio, Tex. : 2000), 2022-11, Vol.32 (6), p.748-755

2022

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Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Journal of applied physics, 2024-03, Vol.135 (9)

2024

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Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf1-xZrxO2 thin films

Applied physics letters, 2021-03, Vol.118 (10)

2021

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Thickness scaling of pyroelectric response in thin ferroelectric Hf1−xZrxO2 films

Applied physics letters, 2018-10, Vol.113 (18)

2018

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Impacts to FeRAM design arising from interfacial dielectric layers and wake up modulation in ferroelectric hafnium zirconium oxide

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2024-02, Vol.71 (2), p.1-1

2024

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Erratum: “Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf1-xZrxO2 thin films” [Appl. Phys. Lett. 118, 102901 (2021)]

Applied physics letters, 2021-09, Vol.119 (12)

2021

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Thermal resistance and heat capacity in hafnium zirconium oxide (Hf1–xZrxO2) dielectrics and ferroelectric thin films

Applied physics letters, 2018-11, Vol.113 (19)

2018

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Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X‑ray Photoelectron Spectroscopy

ACS applied materials & interfaces, 2021-03, Vol.13 (12), p.14634-14643

2021

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Tunable Visible and Near-IR Emission from Sub-10 nm Etched Single-Crystal Si Nanopillars

Nano letters, 2010-11, Vol.10 (11), p.4423-4428

2010

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Ga lithography in sputtered niobium for superconductive micro and nanowires

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Techniques of cryogenic reactive ion etching in silicon for fabrication of sensors

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2009-09, Vol.27 (5), p.1211-1216

2009

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Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices

Nanoscale, 2013-02, Vol.5 (3), p.927-931

2013

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Size tunable visible and near-infrared photoluminescence from vertically etched silicon quantum dots

Applied physics letters, 2011-04, Vol.98 (15), p.153114-153114-3

2011

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Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films

ACS applied materials & interfaces, 2020-06, Vol.12 (23), p.26577-26585

2020

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Chemical downstream etching of Ge, Si, and SiNx films

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2016-09, Vol.34 (5)

2016

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Impacts to FeRAM Design Arising From Interfacial Dielectric Layers and Wake-Up Modulation in Ferroelectric Hafnium Zirconium Oxide

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2023-09, Vol.71 (2)

2023

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Impact of oxygen content on phase constitution and ferroelectric behavior of hafnium oxide thin films deposited by reactive high-power impulse magnetron sputtering

Acta materialia, 2022-10, Vol.239 (C), p.118220, Article 118220

2022

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Wake-up and fatigue mechanisms in ferroelectric Hf 0.5 Zr 0.5 O 2 films with symmetric RuO 2 electrodes

Journal of applied physics, 2021-10, Vol.130 (13)

2021

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Erratum: “Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf1- x Zr x O2 thin films” [Appl. Phys. Lett. 118 , 102901 (2021)]

Applied physics letters, 2021-09, Vol.119 (12)

2021

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Thickness scaling of pyroelectric response in thin ferroelectric Hf 1-xZr xO2 films

Applied physics letters, 2018-11, Vol.113 (18)

2018

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Wake-up and fatigue mechanisms in ferroelectric Hf0.5Zr0.5O2 films with symmetric RuO2 electrodes

Compositional dependence of linear and nonlinear optical response in crystalline hafnium zirconium oxide thin films

Oblique patterned etching of vertical silicon sidewalls

Stress dependent oxidation of sputtered niobium and effects on superconductivity

Acute‐phase proteins in cats with obstructive feline lower urinary tract disease

Applicability of the drainage effectiveness of Blake drains and Tenckhoff catheters in the peritoneal dialysis of healthy rabbits (Oryctolagus cuniculus)

Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes

Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf1-xZrxO2 thin films

Thickness scaling of pyroelectric response in thin ferroelectric Hf1−xZrxO2 films

Impacts to FeRAM design arising from interfacial dielectric layers and wake up modulation in ferroelectric hafnium zirconium oxide

Erratum: “Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf1-xZrxO2 thin films” [Appl. Phys. Lett. 118, 102901 (2021)]

Thermal resistance and heat capacity in hafnium zirconium oxide (Hf1–xZrxO2) dielectrics and ferroelectric thin films

Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X‑ray Photoelectron Spectroscopy

Tunable Visible and Near-IR Emission from Sub-10 nm Etched Single-Crystal Si Nanopillars

Ga lithography in sputtered niobium for superconductive micro and nanowires

Techniques of cryogenic reactive ion etching in silicon for fabrication of sensors

Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices

Size tunable visible and near-infrared photoluminescence from vertically etched silicon quantum dots

Phase-Exchange-Driven Wake-Up and Fatigue in Ferroelectric Hafnium Zirconium Oxide Films

Chemical downstream etching of Ge, Si, and SiNx films

Impacts to FeRAM Design Arising From Interfacial Dielectric Layers and Wake-Up Modulation in Ferroelectric Hafnium Zirconium Oxide

Impact of oxygen content on phase constitution and ferroelectric behavior of hafnium oxide thin films deposited by reactive high-power impulse magnetron sputtering

Wake-up and fatigue mechanisms in ferroelectric Hf 0.5 Zr 0.5 O 2 films with symmetric RuO 2 electrodes

Erratum: “Compositional and phase dependence of elastic modulus of crystalline and amorphous Hf1- x Zr x O2 thin films” [Appl. Phys. Lett. 118 , 102901 (2021)]

Thickness scaling of pyroelectric response in thin ferroelectric Hf 1-xZr xO2 films

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