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Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs

IEEE electron device letters, 1993-08, Vol.14 (8), p.409-411

1993

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CMOS scaling for high performance and low power-the next ten years

Proceedings of the IEEE, 1995-04, Vol.83 (4), p.595-606

1995

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A high-performance 0.25- mu m CMOS technology. I. Design and characterization

IEEE transactions on electron devices, 1992-04, Vol.39 (4), p.959-966

1992

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High-performance devices for a 0.15- mu m CMOS technology

IEEE electron device letters, 1993-10, Vol.14 (10), p.466-468

1993

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A new 'shift and ratio' method for MOSFET channel-length extraction

IEEE electron device letters, 1992-05, Vol.13 (5), p.267-269

1992

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Shallow junctions, silicide requirements and process technologies for sub 0.5 μm CMOS: Invited review paper

Microelectronic engineering, 1992, Vol.19 (1), p.649-656

Davari, Bijan

1992

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Shallow junctions, silicide requirements and process technologies for sub 0.5 μm CMOS

Microelectronic engineering, 1992-09, Vol.19 (1-4), p.649-656

Davari, Bijan

1992

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Shallow Junctions, Silicide Requirements and Process Technologies for Sub 0.5 μm CMOS

ESSDERC '92: 22nd European Solid State Device Research conference, 1992, p.649-656

Davari, Bijan

1992

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1-GHz fully pipelined 3.7-ns address access time 8 k×1024 embedded synchronous DRAM macro

IEEE journal of solid-state circuits, 2000-11, Vol.35 (11), p.1673

2000

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1-GHz fully pipelined 3.7-ns address access time 8 k x 1024 embedded synchronous DRAM macro

IEEE journal of solid-state circuits, 2000-11, Vol.35 (11), p.1673-1679

2000

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Non-destructive testing of semiconductors using acoustic wave method

The Journal of the Acoustical Society of America, 1987-07, Vol.82 (1), p.405-406

1987

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A high-performance 0.25- mu m CMOS technology. II. Technology

IEEE transactions on electron devices, 1992-04, Vol.39 (4), p.967-975

1992

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NONDESTRUCTIVE CHARACTERIZATION OF SEMICONDUCTOR SURFACES AND INTERFACES (SILICON, GALLIUM-ARSENIDE)

DAVARI, BIJAN

1984

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EFFECTS OF CROSS-COUPLING ON THE STABILITY OF AIRCRAFT

DAVARI, BIJAN

1976

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Source-Drain contact resistance in CMOS with self-aligned TiSi2

IEEE transactions on electron devices, 1987-03, Vol.34 (3), p.575-580

1987

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Arsenic source and drain implant induced degradation of short-channel effects in NMOSFETs

IEEE electron device letters, 1993-07, Vol.14 (7), p.345-347

1993

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BiCMOS technology with 60 GHz n-p-n bipolar and 0.25 mu m CMOS

IEEE electron device letters, 1992-11, Vol.13 (11), p.578-580

1992

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SOI Technology Outlook for Sub-0.25 μm CMOS, Challenges and Opportunities

ESSDERC '93: 23rd European solid State Device Research Conference, 1993, p.669-674

1993

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Effect of a Nonconstant Cma on the Stability of Rolling Aircraft

Journal of aircraft, 1977-12, Vol.14 (12), p.1169-1174

1977

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A 7.9/5.5 psec room/low temperature SOI CMOS

International Electron Devices Meeting. IEDM Technical Digest, 1997, p.415-418

1997

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Characterization of Mercury Cadmium Telluride Using Nondestructive Transverse Acoustoelectric Voltage Measurements

1983 Ultrasonics Symposium, 1983, p.421-426

1983

Volltextzugriff (PDF)

Integrated electron‐beam lithography for 0.25 μm device fabrication

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989-11, Vol.7 (6), p.1827-1831

1989

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Cone-beam computed tomographic comparison of chin symphysis bone particles and allograft versus iliac crest bone graft alone for reconstruction of alveolar bone defects in cleft patients

대한구강악안면외과학회지, 2022, 48(2), , pp.85-93

2022

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Cone-beam computed tomographic comparison of chin symphysis bone particles and allograft versus iliac crest bone graft alone for reconstruction of alveolar bone defects in cleft patients

Journal of the Korean Association of Oral and Maxillofacial Surgeons, 2022-04, Vol.48 (2), p.85-93

2022

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From the Idea of God in Classical Metaphysics to Nietzsche's Alternative Design

Pizhūhishʹhā-yi falsafī (Tabrīz.), 2021-12, Vol.15 (37), p.1052-1074

2021

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Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs

CMOS scaling for high performance and low power-the next ten years

A high-performance 0.25- mu m CMOS technology. I. Design and characterization

High-performance devices for a 0.15- mu m CMOS technology

A new 'shift and ratio' method for MOSFET channel-length extraction

Shallow junctions, silicide requirements and process technologies for sub 0.5 μm CMOS: Invited review paper

Shallow junctions, silicide requirements and process technologies for sub 0.5 μm CMOS

Shallow Junctions, Silicide Requirements and Process Technologies for Sub 0.5 μm CMOS

1-GHz fully pipelined 3.7-ns address access time 8 k×1024 embedded synchronous DRAM macro

1-GHz fully pipelined 3.7-ns address access time 8 k x 1024 embedded synchronous DRAM macro

Non-destructive testing of semiconductors using acoustic wave method

A high-performance 0.25- mu m CMOS technology. II. Technology

NONDESTRUCTIVE CHARACTERIZATION OF SEMICONDUCTOR SURFACES AND INTERFACES (SILICON, GALLIUM-ARSENIDE)

EFFECTS OF CROSS-COUPLING ON THE STABILITY OF AIRCRAFT

Source-Drain contact resistance in CMOS with self-aligned TiSi2

Arsenic source and drain implant induced degradation of short-channel effects in NMOSFETs

BiCMOS technology with 60 GHz n-p-n bipolar and 0.25 mu m CMOS

SOI Technology Outlook for Sub-0.25 μm CMOS, Challenges and Opportunities

Effect of a Nonconstant Cma on the Stability of Rolling Aircraft

A 7.9/5.5 psec room/low temperature SOI CMOS

Characterization of Mercury Cadmium Telluride Using Nondestructive Transverse Acoustoelectric Voltage Measurements

Integrated electron‐beam lithography for 0.25 μm device fabrication

Cone-beam computed tomographic comparison of chin symphysis bone particles and allograft versus iliac crest bone graft alone for reconstruction of alveolar bone defects in cleft patients

Cone-beam computed tomographic comparison of chin symphysis bone particles and allograft versus iliac crest bone graft alone for reconstruction of alveolar bone defects in cleft patients

From the Idea of God in Classical Metaphysics to Nietzsche's Alternative Design

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