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Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

Nano letters, 2015-10, Vol.15 (10), p.6770-6776

2015

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From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer

Applied physics letters, 2007-12, Vol.91 (25), p.251902-251902-3

2007

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Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN Nanowires

Nano letters, 2016-02, Vol.16 (2), p.960-966

2016

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Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

Nanotechnology, 2009-10, Vol.20 (41), p.415602-415602

2009

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Nanoscale x-ray investigation of composition fluctuations in AlGaN nanowires

Nanotechnology, 2020-09, Vol.31 (37), p.375709-375709

2020

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Growth mechanism and properties of InGaN insertions in GaN nanowires

Nanotechnology, 2012-04, Vol.23 (13), p.135703-1-6

2012

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Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

Nanotechnology, 2011-02, Vol.22 (7), p.075601-075601

2011

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Growth, structural and optical properties of AlGaN nanowires in the whole composition range

Nanotechnology, 2013-03, Vol.24 (11), p.115704-115704

2013

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Resonant Raman scattering of core-shell GaN/AlN nanowires

Nanotechnology, 2020-12, Vol.32 (8), p.85713

2020

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Identification of III–N nanowire growth kinetics via a marker technique

Nanotechnology, 2010-07, Vol.21 (29), p.295605-295605

2010

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Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications

Applied physics letters, 2018-11, Vol.113 (20)

2018

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Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature

Journal of physics. D, Applied physics, 2017-07, Vol.50 (32)

2017

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Ultraviolet Raman spectroscopy of GaN/AlN core-shell nanowires: Core, shell, and interface modes

Applied physics letters, 2013-04, Vol.102 (14)

2013

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Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy

Nanotechnology, 2020-03, Vol.31 (11), p.115602-115602

2020

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Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires

Journal of physical chemistry. C, 2015-08, Vol.119 (31), p.17954-17964

2015

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Incorporation of Europium into GaN Nanowires by Ion Implantation

Journal of physical chemistry. C, 2019-05, Vol.123 (18), p.11874-11887

2019

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Submicrometre resolved optical characterization of green nanowire-based light emitting diodes

Nanotechnology, 2011-08, Vol.22 (34), p.345705-1-9

2011

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Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence

Nanotechnology, 2013-08, Vol.24 (30), p.305703-305703

2013

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Enhanced red emission from praseodymium-doped GaN nanowires by defect engineering

Acta materialia, 2013-05, Vol.61 (9), p.3278-3284

2013

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In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

Applied physics letters, 2012-05, Vol.100 (21), p.212107-212107-5

2012

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Strain assisted inter-diffusion in GaN/AlN quantum dots

Journal of applied physics, 2013-01, Vol.113 (3)

2013

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Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots

Physical review. B, Condensed matter, 2003-07, Vol.68 (3), Article 035312

2003

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The structural properties of GaN/AlN core–shell nanocolumn heterostructures

Nanotechnology, 2010-10, Vol.21 (41), p.415702-415702

2010

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Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires

Journal of applied physics, 2013-01, Vol.113 (4)

2013

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Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

Journal of applied physics, 2002-06, Vol.91 (12), p.9638-9645

2002

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Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer

Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN Nanowires

Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

Nanoscale x-ray investigation of composition fluctuations in AlGaN nanowires

Growth mechanism and properties of InGaN insertions in GaN nanowires

Structural and optical properties of InGaN/GaN nanowire heterostructures grown by PA-MBE

Growth, structural and optical properties of AlGaN nanowires in the whole composition range

Resonant Raman scattering of core-shell GaN/AlN nanowires

Identification of III–N nanowire growth kinetics via a marker technique

Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications

Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature

Ultraviolet Raman spectroscopy of GaN/AlN core-shell nanowires: Core, shell, and interface modes

Impact of kinetics on the growth of GaN on graphene by plasma-assisted molecular beam epitaxy

Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires

Incorporation of Europium into GaN Nanowires by Ion Implantation

Submicrometre resolved optical characterization of green nanowire-based light emitting diodes

Probing alloy composition gradient and nanometer-scale carrier localization in single AlGaN nanowires by nanocathodoluminescence

Enhanced red emission from praseodymium-doped GaN nanowires by defect engineering

In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

Strain assisted inter-diffusion in GaN/AlN quantum dots

Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots

The structural properties of GaN/AlN core–shell nanocolumn heterostructures

Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires

Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

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