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Vertical III–V Nanowire Device Integration on Si(100)

Nano letters, 2014-04, Vol.14 (4), p.1914-1920

2014

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Monolithic Multiwavelength VCSEL Array Using Cavity Patterning

IEEE photonics technology letters, 2022-09, Vol.34 (18), p.961-964

2022

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Real-time etching process monitoring and end-point detection with a time-of-flight mass spectrometer

2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2024, p.01-04

2024

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Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy

Nano letters, 2010-01, Vol.10 (1), p.171-175

2010

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Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

Applied physics letters, 2008-06, Vol.92 (26)

2008

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Efficient Tunnel Junction Lithographic Aperture 940 nm VCSEL

IEEE photonics technology letters, 2023-04, Vol.35 (7), p.389-392

2023

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Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires

Applied physics letters, 2014-01, Vol.104 (1)

2014

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940 nm High Power Single Transverse Mode Coherent VCSEL Array With Tunnel Junction Lithographic Aperture

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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Multiple Wavelength VCSEL Array With Intra-Cavity Grating

2021 27th International Semiconductor Laser Conference (ISLC), 2021, p.1-2

2021

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Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices

Nanotechnology, 2013-06, Vol.24 (22), p.225304-225304

2013

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Field emission beam characteristics of single metal nanotip cathodes with on-chip collimation gate electrode

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-05, Vol.33 (3)

2015

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Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy

Advanced materials (Weinheim), 2010-09, Vol.22 (36), p.4020-4024

2010

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A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping

Nanoscale research letters, 2010-01, Vol.5 (1), p.243-246, Article 243

2010

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Ex situ n and p doping of vertical epitaxial short silicon nanowires by ion implantation

Nanotechnology, 2009-04, Vol.20 (16), p.165706-165706

2009

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Electron beam collimation from an all-metal double-gate 40 000 nanotip array: Improved emission current and beam uniformity upon neon gas conditioning

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-05, Vol.33 (3)

2015

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Characterization of Structural Changes Associated with Doping Silicon Nanowires by Ion Implantation

Crystal growth & design, 2011-07, Vol.11 (7), p.2690-2694

2011

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Controlled in situ boron doping of short silicon nanowires grownby molecular beam epitaxy

Applied physics letters, 2008-07, Vol.92 (26), p.263107-263107-3

2008

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Electrical and thermoelectrical properties of gated InAs nanowires

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013, p.252-255

2013

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Novel Method to Fabricate Silicon Nanowire p-n Junctions by a Combination of Ion Implantation and in-situ Doping

Nanoscale research letters, 2009-11, Vol.5 (1), p.243-246

2009

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Heat dissipation and thermometry in nanosystems: When interfaces dominate

71st Device Research Conference, 2013, p.231-232

2013

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Acceptor Deactivation in Silicon Nanowires Analyzed by Scanning Spreading Resistance Microscopy

Solid state phenomena, 2011, Vol.178-179, p.50-55

2011

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Gated hybrid Hall effect device on silicon

Microelectronics, 2005-03, Vol.36 (3-6), p.294-297

2005

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Field emission beam characteristics of a double-gate single nanoemitter

2014 27th International Vacuum Nanoelectronics Conference (IVNC), 2014, p.167-168

2014

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Social Risk Factors Contributing to Anxiety, Depression and Stress among Indian Healthcare Students during Lockdown

The open public health journal, 2024-01, Vol.17 (1)

2024

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Vertical III–V Nanowire Device Integration on Si(100)

Monolithic Multiwavelength VCSEL Array Using Cavity Patterning

Real-time etching process monitoring and end-point detection with a time-of-flight mass spectrometer

Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy

Controlled in situ boron doping of short silicon nanowires grown by molecular beam epitaxy

Efficient Tunnel Junction Lithographic Aperture 940 nm VCSEL

Using the Seebeck coefficient to determine charge carrier concentration, mobility, and relaxation time in InAs nanowires

940 nm High Power Single Transverse Mode Coherent VCSEL Array With Tunnel Junction Lithographic Aperture

Multiple Wavelength VCSEL Array With Intra-Cavity Grating

Selective area growth of III-V nanowires and their heterostructures on silicon in a nanotube template: towards monolithic integration of nano-devices

Field emission beam characteristics of single metal nanotip cathodes with on-chip collimation gate electrode

Three-Dimensional Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy

A Novel Method to Fabricate Silicon Nanowire p–n Junctions by a Combination of Ion Implantation and in-situ Doping

Ex situ n and p doping of vertical epitaxial short silicon nanowires by ion implantation

Electron beam collimation from an all-metal double-gate 40 000 nanotip array: Improved emission current and beam uniformity upon neon gas conditioning

Characterization of Structural Changes Associated with Doping Silicon Nanowires by Ion Implantation

Controlled in situ boron doping of short silicon nanowires grownby molecular beam epitaxy

Electrical and thermoelectrical properties of gated InAs nanowires

Novel Method to Fabricate Silicon Nanowire p-n Junctions by a Combination of Ion Implantation and in-situ Doping

Heat dissipation and thermometry in nanosystems: When interfaces dominate

Acceptor Deactivation in Silicon Nanowires Analyzed by Scanning Spreading Resistance Microscopy

Gated hybrid Hall effect device on silicon

Field emission beam characteristics of a double-gate single nanoemitter

Social Risk Factors Contributing to Anxiety, Depression and Stress among Indian Healthcare Students during Lockdown

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