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Dynamical X‐ray diffraction imaging of voids in dislocation‐free high‐purity germanium single crystals

Journal of applied crystallography, 2020-08, Vol.53 (4), p.880-884

2020

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Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals

Materials, 2022-10, Vol.15 (19), p.6996

2022

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X‐Ray Topography—More than Nice Pictures

Crystal research and technology (1979), 2020-09, Vol.55 (9), p.n/a

Danilewsky, Andreas N.

2020

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Real-time direct and diffraction X-ray imaging of irregular silicon wafer breakage

IUCrJ, 2016-03, Vol.3 (Pt 2), p.108-114

2016

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Evolution of impurity incorporation during ammonothermal growth of GaN

Journal of crystal growth, 2016-12, Vol.456, p.51-57

2016

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Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon

Crystals (Basel), 2017-11, Vol.7 (11), p.347

2017

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Investigation of the dislocation structure in Czochralski germanium crystals grown in [211] and [110] growth directions

CrystEngComm, 2021-06, Vol.23 (23), p.4116-4124

2021

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Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators

Crystal research and technology (1979), 2016-04, Vol.51 (4), p.290-298

2016

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X-ray imaging of silicon die within fully packaged semiconductor devices

Powder diffraction, 2021-06, Vol.36 (2), p.78-84

2021

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Vacancy Clustering in Dislocation-Free High-Purity Germanium

Journal of electronic materials, 2020-09, Vol.49 (9), p.5097-5103

2020

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Experimental impact cratering: A summary of the major results of the MEMIN research unit

Meteoritics & planetary science, 2018-08, Vol.53 (8), p.1543-1568

2018

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Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

Journal of applied physics, 2013-11, Vol.114 (18)

2013

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In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers

Materials science forum, 2018-06, Vol.924, p.172-175

2018

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Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography

Materials science forum, 2018-06, Vol.924, p.176-179

2018

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Nondestructive Monitoring of Die Warpage in Encapsulated Chip Packages

IEEE transactions on components, packaging, and manufacturing technology (2011), 2016-04, Vol.6 (4), p.653-662

2016

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Analysis of c-lattice parameters to evaluate Na2O loss from and Na2O content in β''-alumina ceramics

Ceramics international, 2021-05, Vol.47 (10), p.13402-13408

2021

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Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers

Materials science forum, 2022-05, Vol.1062, p.113-118

2022

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Anisotropic Microsegregation in the Growth of Doped III‐V‐Semiconductors from Solution

Crystal research and technology (1979), 2018-05, Vol.53 (5), p.n/a

2018

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Phase transitions of α‐quartz at elevated temperatures under dynamic compression using a membrane‐driven diamond anvil cell: Clues to impact cratering?

Meteoritics & planetary science, 2018-08, Vol.53 (8), p.1687-1695

2018

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Review of Sublimation Growth of SiC Bulk Crystals

Materials science forum, 2022-05, Vol.1062, p.104-112

2022

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Diffraction and Transmission Synchrotron Imaging at the German Light Source ANKA-Potential Industrial Applications

AIP conference proceedings, 2009, Vol.1099 (1), p.878-881

2009

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Phase transitions of silicon under dynamic and non-hydrostatic conditions

Acta crystallographica. Section A, Foundations and advances, 2016-08, Vol.72 (a1), p.s301-s301

2016

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(Invited) Synchrotron White-Beam X-Ray Topography Analysis of the Defect Structure of HVPE-GaN Substrates

ECS transactions, 2015, Vol.66 (1), p.93-106

2015

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THEORETICAL ANALYSIS OF InP CRYSTAL GROWTH EXPERIMENT PERFORMED ON-BOARD RUSSIAN FOTON-11 SATELLITE

Acta astronautica, 2001-01, Vol.48 (2), p.79-85

2001

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Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators page 290-298 by Raphaeel P. Hermann et al

Crystal research and technology (1979), 2016-04, Vol.51 (4), p.243-243

2016

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Dynamical X‐ray diffraction imaging of voids in dislocation‐free high‐purity germanium single crystals

Large-Scale Defect Clusters with Hexagonal Honeycomb-like Arrangement in Ammonothermal GaN Crystals

X‐Ray Topography—More than Nice Pictures

Real-time direct and diffraction X-ray imaging of irregular silicon wafer breakage

Evolution of impurity incorporation during ammonothermal growth of GaN

Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon

Investigation of the dislocation structure in Czochralski germanium crystals grown in [211] and [110] growth directions

Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators

X-ray imaging of silicon die within fully packaged semiconductor devices

Vacancy Clustering in Dislocation-Free High-Purity Germanium

Experimental impact cratering: A summary of the major results of the MEMIN research unit

Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates

In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers

Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography

Nondestructive Monitoring of Die Warpage in Encapsulated Chip Packages

Analysis of c-lattice parameters to evaluate Na2O loss from and Na2O content in β''-alumina ceramics

Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers

Anisotropic Microsegregation in the Growth of Doped III‐V‐Semiconductors from Solution

Phase transitions of α‐quartz at elevated temperatures under dynamic compression using a membrane‐driven diamond anvil cell: Clues to impact cratering?

Review of Sublimation Growth of SiC Bulk Crystals

Diffraction and Transmission Synchrotron Imaging at the German Light Source ANKA-Potential Industrial Applications

Phase transitions of silicon under dynamic and non-hydrostatic conditions

(Invited) Synchrotron White-Beam X-Ray Topography Analysis of the Defect Structure of HVPE-GaN Substrates

THEORETICAL ANALYSIS OF InP CRYSTAL GROWTH EXPERIMENT PERFORMED ON-BOARD RUSSIAN FOTON-11 SATELLITE

Single-crystal sapphire microstructure for high-resolution synchrotron X-ray monochromators page 290-298 by Raphaeel P. Hermann et al

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