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Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography

Journal of crystal growth, 2011, Vol.314 (1), p.21-29

2011

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Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging

Journal of crystal growth, 2011-03, Vol.318 (1), p.1157-1163

2011

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White beam synchrotron topography using a high resolution digital X-ray imaging detector

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2008-05, Vol.266 (9), p.2035-2040

2008

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Effect of surfactants on the growth and characterization of triglycine sulfate crystals

Journal of crystal growth, 2021-06, Vol.563, p.126081, Article 126081

2021

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Anisotropic and temperature-dependent thermal conductivity of PbI 2

Journal of crystal growth, 2017-05, Vol.466, p.16-21

2017

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Anisotropic and temperature-dependent thermal conductivity of PbI2

Journal of crystal growth, 2017-05, Vol.466, p.16-21

2017

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The experimental station for white beam X-ray topography at the synchrotron light source ANKA, Karlsruhe

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003, Vol.199, p.550-553

2003

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Floating-zone and floating-solution-zone growth of GaSb under microgravity

Journal of crystal growth, 1998-07, Vol.191 (3), p.365-376

1998

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Removal of oxidic impurities for the growth of high purity lead iodide single crystals

Journal of crystal growth, 2015-04, Vol.416, p.82-89

2015

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In-Operando X-ray diffraction imaging of thermal strains in fully packaged silicon devices

Microelectronics and reliability, 2019-08, Vol.99, p.232-238

2019

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Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied with synchrotron white-beam X-ray topography

Acta materialia, 2013-10, Vol.61 (18), p.6903-6910

2013

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Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers

Thin solid films, 2016-03, Vol.603, p.435-440

2016

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The micro-imaging station of the TopoTomo beamline at the ANKA synchrotron light source

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-06, Vol.267 (11), p.1978-1988

2009

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Czochralski growth of lead iodide single crystals: Investigations and comparison with the Bridgman method

Journal of crystal growth, 2011-03, Vol.318 (1), p.558-562

2011

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B-Spline X-Ray Diffraction Imaging — Rapid non-destructive measurement of die warpage in ball grid array packages

Microelectronics and reliability, 2016-04, Vol.59, p.108-116

2016

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Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection

Journal of crystal growth, 2010-04, Vol.312 (8), p.1233-1239

2010

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Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-02, Vol.268 (3), p.383-387

2010

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Combined use of three-dimensional X-ray diffraction imaging and micro-Raman spectroscopy for the non-destructive evaluation of plasma arc induced damage on silicon wafers

Microelectronic engineering, 2011, Vol.88 (1), p.64-71

2011

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Influence of mechanical defects on the crystal lattice of silicon

Crystal research and technology (1979), 2012-03, Vol.47 (3), p.253-260

2012

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X-ray diffraction imaging for predictive metrology of crack propagation in 450-mm diameter silicon wafers

Powder diffraction, 2013-06, Vol.28 (2), p.95-99

2013

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Characterization of TlBr for X-ray and γ-ray detector applications

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2009-08, Vol.607 (1), p.129-131

2009

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The influence of axial magnetic fields on the growth of III–V semiconductors from metallic solutions

Journal of crystal growth, 1992-07, Vol.121 (3), p.305-314

1992

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InP growth from In solutions under reduced gravity

Journal of crystal growth, 1989-10, Vol.97 (3), p.571-577

1989

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Crystal growth in mirror heaters: Time markers by lamp pulses

Journal of crystal growth, 1990-11, Vol.106 (2), p.273-278

1990

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Growth kinetics in space- and earth-grown InP and GaSb crystals

Journal of crystal growth, 1990, Vol.99 (1), p.1281-1286

1990

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Threading dislocations in n- and p-type 4H–SiC material analyzed by etching and synchrotron X-ray topography

Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging

White beam synchrotron topography using a high resolution digital X-ray imaging detector

Effect of surfactants on the growth and characterization of triglycine sulfate crystals

Anisotropic and temperature-dependent thermal conductivity of PbI 2

Anisotropic and temperature-dependent thermal conductivity of PbI2

The experimental station for white beam X-ray topography at the synchrotron light source ANKA, Karlsruhe

Floating-zone and floating-solution-zone growth of GaSb under microgravity

Removal of oxidic impurities for the growth of high purity lead iodide single crystals

In-Operando X-ray diffraction imaging of thermal strains in fully packaged silicon devices

Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied with synchrotron white-beam X-ray topography

Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers

The micro-imaging station of the TopoTomo beamline at the ANKA synchrotron light source

Czochralski growth of lead iodide single crystals: Investigations and comparison with the Bridgman method

B-Spline X-Ray Diffraction Imaging — Rapid non-destructive measurement of die warpage in ball grid array packages

Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection

Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography

Combined use of three-dimensional X-ray diffraction imaging and micro-Raman spectroscopy for the non-destructive evaluation of plasma arc induced damage on silicon wafers

Influence of mechanical defects on the crystal lattice of silicon

X-ray diffraction imaging for predictive metrology of crack propagation in 450-mm diameter silicon wafers

Characterization of TlBr for X-ray and γ-ray detector applications

The influence of axial magnetic fields on the growth of III–V semiconductors from metallic solutions

InP growth from In solutions under reduced gravity

Crystal growth in mirror heaters: Time markers by lamp pulses

Growth kinetics in space- and earth-grown InP and GaSb crystals

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