UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3166-3175

2013

Volltextzugriff (PDF)

35 nm mHEMT Technology for THz and ultra low noise applications

2013 International Conference on Indium Phosphide and Related Materials (IPRM), 2013, p.1-2

2013

Volltextzugriff (PDF)

Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production

Physica status solidi. A, Applications and materials science, 2010-06, Vol.207 (6), p.1450-1454

2010

Volltextzugriff (PDF)

50 nm MHEMT Technology for G- and H-Band MMICs

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.24-27

2007

Volltextzugriff (PDF)

GaN-based high-frequency devices and circuits: A Fraunhofer perspective

Physica status solidi. A, Applications and materials science, 2012-03, Vol.209 (3), p.491-496

2012

Volltextzugriff (PDF)

(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN13-08JN13-6

2013

Volltextzugriff (PDF)

Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

Journal of electronic materials, 2010-06, Vol.39 (6), p.756-760

2010

Volltextzugriff (PDF)

AlGaN/GaN epitaxy and technology

International journal of microwave and wireless technologies, 2010-02, Vol.2 (1), p.3-11

2010

Volltextzugriff (PDF)

Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz

2024 Device Research Conference (DRC), 2024, p.1-2

2024

Volltextzugriff (PDF)

Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of \mathrm}=10.2 GHz

2023 Device Research Conference (DRC), 2023, p.1-2

2023

Volltextzugriff (PDF)

Digitalisierung im pharmazeutischen Großhandel am Beispiel des MSV3-Standards

Digitale Transformation Von Dienstleistungen Im Gesundheitswesen VII, 2020, p.133-144

2020

Volltextzugriff (PDF)

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

Volltextzugriff (PDF)

Si-Substrate Removal for AlGaN/GaN Devices on PCB Carriers

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.286-289

2020

Volltextzugriff (PDF)

Voltage- and Temperature-Dependent Degradation of AIN/GaN High Electron Mobility Transistors

2018 International Integrated Reliability Workshop (IIRW), 2018, p.1-6

2018

Volltextzugriff (PDF)

A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching

2018 76th Device Research Conference (DRC), 2018, p.1-2

2018

Volltextzugriff (PDF)

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements : GaN ELECTRONIC DEVICES

IEEE transactions on electron devices, 2013, Vol.60 (10), p.3166-3175

2013

Volltextzugriff (PDF)

Reproducible and uniform growth of Editor's Choice GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production

Physica status solidi. A, Applications and materials science, 2010, Vol.207 (6), p.1450-1454

2010

Volltextzugriff (PDF)

Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs

Materials science forum, 2012, Vol.725, p.79-82

2012

Volltextzugriff (PDF)

Deep-level characterization of GaN-on-GaN current aperture vertical electron transistors

2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2021, p.277-282

2021

Volltextzugriff (PDF)

Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power

2017 IEEE Asia Pacific Microwave Conference (APMC), 2017, p.395-398

2017

Volltextzugriff (PDF)

Multi-Stage Cascode in High-Voltage AlGaN/GaN-on-Si Technology

2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2018, p.237-241

2018

Volltextzugriff (PDF)

70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers

International Conference onIndium Phosphide and Related Materials, 2003, 2003, p.215-218

2003

Volltextzugriff (PDF)

Metamorphic 50 nm InAs-channel HEMT

International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.129-132

2005

Volltextzugriff (PDF)

Investigation of Leakage Current of AIGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

Journal of electronic materials, 2010, Vol.39 (6), p.756-760

2010

Volltextzugriff (PDF)

An Empirical Evaluation of Machine Learning Methods for the Insurance Industry

Proceedings of Sixth International Congress on Information and Communication Technology, 2021, Vol.236, p.933-941

2021

Volltextzugriff (PDF)

1 – 25 von 311

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(258)
Mit Volltextzugriff
(262)

Publikationsform

Sprache

Englisch
(288)
Japanisch
(31)
Deutsch
(23)
Norwegisch
(1)

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

Blood
(18)
Plos One
(10)
Early Human Development
(8)
Pediatric Research
(8)
Acta Paediatrica
(7)
Cytokine
(7)
Journal Of Neurosurgery
(7)
The Journal Of Pediatrics
(7)
Acta Paediatrica, International Journal Of Paediatrics
(6)
Acta Pædiatrica
(5)

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(6)

Menü

Weitere Dienste

Einstellungen

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

35 nm mHEMT Technology for THz and ultra low noise applications

Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production

50 nm MHEMT Technology for G- and H-Band MMICs

GaN-based high-frequency devices and circuits: A Fraunhofer perspective

(In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies

Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

AlGaN/GaN epitaxy and technology

Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz

Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of \mathrm}=10.2 GHz

Digitalisierung im pharmazeutischen Großhandel am Beispiel des MSV3-Standards

Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress

Si-Substrate Removal for AlGaN/GaN Devices on PCB Carriers

Voltage- and Temperature-Dependent Degradation of AIN/GaN High Electron Mobility Transistors

A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching

Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements : GaN ELECTRONIC DEVICES

Reproducible and uniform growth of Editor's Choice GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production

Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs

Deep-level characterization of GaN-on-GaN current aperture vertical electron transistors

Enhanced GaN HEMT technology for E-band power amplifier MMICs with 1W output power

Multi-Stage Cascode in High-Voltage AlGaN/GaN-on-Si Technology

70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers

Metamorphic 50 nm InAs-channel HEMT

Investigation of Leakage Current of AIGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

An Empirical Evaluation of Machine Learning Methods for the Insurance Industry

Suchergebnisse filtern