UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(0 0 1) for microelectronics and optoelectronics purposes

Journal of crystal growth, 2005-01, Vol.274 (1), p.90-99

2005

Volltextzugriff (PDF)

Characterization of photocatalytic paints: a relationship between the photocatalytic properties – release of nanoparticles and volatile organic compounds

Environmental science. Nano, 2017, Vol.4 (10), p.1998-2009

2017

Volltextzugriff (PDF)

Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique

Applied physics letters, 2007-02, Vol.90 (7)

2007

Volltextzugriff (PDF)

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Journal of non-crystalline solids, 2002-05, Vol.303 (1), p.17-23

2002

Volltextzugriff (PDF)

Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction

Solid-state electronics, 2010-02, Vol.54 (2), p.205-212

2010

Volltextzugriff (PDF)

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

Solid-state electronics, 2013-05, Vol.83, p.10-17

2013

Volltextzugriff (PDF)

High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

Solid-state electronics, 2011-05, Vol.59 (1), p.2-7

2011

Volltextzugriff (PDF)

4th International Conference on Safe Production and Use of Nanomaterials (Nanosafe2014)

Journal of physics. Conference series, 2015-05, Vol.617 (1), p.11001

2015

Volltextzugriff (PDF)

Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modelling study

Semiconductor science and technology, 2007-03, Vol.22 (3), p.237-244

2007

Volltextzugriff (PDF)

Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 μ m operation

Applied physics letters, 2005-12, Vol.87 (23), p.231109-231109-3

2005

Volltextzugriff (PDF)

Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

2010 Symposium on VLSI Technology, 2010, p.57-58

2010

Volltextzugriff (PDF)

Dual strained channel CMOS in FDSOI architecture: New insights on the device performance

Solid-state electronics, 2011-11, Vol.65-66, p.9-15

2011

Volltextzugriff (PDF)

A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers

Thin solid films, 2012-02, Vol.520 (8), p.3185-3189

2012

Volltextzugriff (PDF)

Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS

Applied surface science, 2011-09, Vol.257 (22), p.9414-9419

2011

Volltextzugriff (PDF)

High- \kappa and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances

IEEE electron device letters, 2008-06, Vol.29 (6), p.635-637

2008

Volltextzugriff (PDF)

Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

Solid-state electronics, 2012-04, Vol.70, p.27-32

2012

Volltextzugriff (PDF)

Thermal stability of the HfO2∕SiO2 interface for sub-0.1μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy

Journal of applied physics, 2004-12, Vol.96 (11), p.6362-6369

2004

Volltextzugriff (PDF)

Enhanced photoluminescence of heavily n -doped germanium

Applied physics letters, 2009-05, Vol.94 (19), p.191107-191107-3

2009

Volltextzugriff (PDF)

A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

Microelectronic engineering, 2011-07, Vol.88 (7), p.1298-1300

2011

Volltextzugriff (PDF)

Photoelectron spectroscopy study of the effect of substrate doping on an HfO2/SiO2/n-Si gate stack

Journal of non-crystalline solids, 2007-04, Vol.353 (5-7), p.635-638

2007

Volltextzugriff (PDF)

Germanium on insulator and new 3D architectures opportunities for integration

International journal of nanotechnology., 2010, Vol.7 (4/5/6/7/8), p.304

2010

Volltextzugriff (PDF)

The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?

Materials science in semiconductor processing, 2008-10, Vol.11 (5), p.205-213

2008

Volltextzugriff (PDF)

Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics

Microelectronic engineering, 2005-06, Vol.80, p.210-213

2005

Volltextzugriff (PDF)

Growth of Si nanocrystals on alumina and integration in memory devices

Applied physics letters, 2003-06, Vol.82 (23), p.4151-4153

2003

Volltextzugriff (PDF)

Surface preparation and post thermal treatment effects on interface properties of thin Al2O3 films deposited by ALD

Microelectronic engineering, 2004-04, Vol.72 (1-4), p.326-331

2004

Volltextzugriff (PDF)

1 – 25 von 107

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(63)
Mit Volltextzugriff
(90)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(59)
Physical Sciences
(50)
Physics
(44)
Technology
(43)
Engineering
(33)
Engineering, Electrical & Electronic
(33)
Physics, Applied
(32)
Exact Sciences And Technology
(28)
Electronics
(23)
Applied Sciences
(21)
Silicon
(20)
Physics, Condensed Matter
(19)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(18)
Germanium
(17)
Materials Science
(17)
Transistors
(16)
Materials Science, Multidisciplinary
(13)
Silicon Germanium
(13)
Hafnium Oxide
(10)
Mosfets
(10)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(0 0 1) for microelectronics and optoelectronics purposes

Characterization of photocatalytic paints: a relationship between the photocatalytic properties – release of nanoparticles and volatile organic compounds

Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains

High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

4th International Conference on Safe Production and Use of Nanomaterials (Nanosafe2014)

Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modelling study

Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55 μ m operation

Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

Dual strained channel CMOS in FDSOI architecture: New insights on the device performance

A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layers

Accurate depth profiling of dry oxidized SiGeC thin films by extended Full Spectrum ToF-SIMS

High- \kappa and Metal-Gate pMOSFETs on GeOI Obtained by Ge Enrichment: Analysis of ON and OFF Performances

Improved 1/f noise characterization of strained SiGe on insulator MOSFETs fabricated on wafers obtained by the Ge enrichment technique

Thermal stability of the HfO2∕SiO2 interface for sub-0.1μm complementary metal-oxide-semiconductor gate oxide stacks: A valence band and quantitative core-level study by soft x-ray photoelectron spectroscopy

Enhanced photoluminescence of heavily n -doped germanium

A comparative 1/ f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology

Photoelectron spectroscopy study of the effect of substrate doping on an HfO2/SiO2/n-Si gate stack

Germanium on insulator and new 3D architectures opportunities for integration

The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?

Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics

Growth of Si nanocrystals on alumina and integration in memory devices

Surface preparation and post thermal treatment effects on interface properties of thin Al2O3 films deposited by ALD

Suchergebnisse filtern