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Ultra-thin MgO(111)-polar sheets grown onto Ag(111)

Applied surface science, 2016-01, Vol.361, p.259-264

2016

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Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

Thin solid films, 2014-04, Vol.557, p.70-75

2014

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Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure

Surface science, 2015-12, Vol.642, p.L1-L5

2015

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Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

Applied physics letters, 2015-01, Vol.106 (2)

2015

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Correction of secondary ion mass spectrometry profiles for atom diffusion measurements

Materials letters, 2009-03, Vol.63 (8), p.676-678

2009

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Source of low-energy coherent electron beams

Applied physics letters, 2006-01, Vol.88 (2), p.023101-023101-3

2006

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Effect of Si and He implantation in the formation of ultra shallow junctions in Si

Thin solid films, 2010-02, Vol.518 (9), p.2354-2356

2010

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Measurement of As diffusivity in Ni2Si thin films

Microelectronic engineering, 2010-03, Vol.87 (3), p.263-266

2010

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Atom Redistribution during co-Doped Amorphous Silicon Crystallization

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2009-01, Vol.289-292, p.329-337

2009

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Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg 2 Si (11–1)/Si (100) heterostructure

Surface science, 2015-12, Vol.642, p.L1-L5

2015

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Lattice and grain-boundary diffusion of As in Ni2Si

Journal of applied physics, 2008-12, Vol.104 (11)

2008

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Correction of secondary ion mass spectrometry profiles for atom diffusion measurements

Materials letters, 2009-03, Vol.63 (8), p.676-678

2009

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Lattice and grain-boundary diffusion of As in Ni2Si

Journal of applied physics, 2008-12, Vol.104 (11)

2008

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Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Materials science forum, 2012-01, Vol.711, p.114-117

2012

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Measurement of As diffusivity in Ni 2Si thin films

Microelectronic engineering, 2010, Vol.87 (3), p.263-266

2010

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Lattice and grain-boundary diffusion of As in Ni 2 Si

Journal of applied physics, 2008-12, Vol.104 (11), p.114312-114312-8

2008

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Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Materials science forum, 2012, Vol.711, p.114-117

2012

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Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes

Advanced materials research, 2011-08, Vol.324, p.265-268

2011

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Source of low-energy coherent electron beams

Applied physics letters, 2006-01, Vol.88 (2)

2006

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Ultra-thin MgO(111)-polar sheets grown onto Ag(111)

Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg2Si (11–1)/Si (100) heterostructure

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

Correction of secondary ion mass spectrometry profiles for atom diffusion measurements

Source of low-energy coherent electron beams

Effect of Si and He implantation in the formation of ultra shallow junctions in Si

Measurement of As diffusivity in Ni2Si thin films

Atom Redistribution during co-Doped Amorphous Silicon Crystallization

Oxidation of Mg atomic monolayer onto silicon: A road toward MgOx/Mg 2 Si (11–1)/Si (100) heterostructure

Lattice and grain-boundary diffusion of As in Ni2Si

Correction of secondary ion mass spectrometry profiles for atom diffusion measurements

Lattice and grain-boundary diffusion of As in Ni2Si

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Measurement of As diffusivity in Ni 2Si thin films

Lattice and grain-boundary diffusion of As in Ni 2 Si

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers: A Comparison between Standard and Plasma Immersion Processes

Source of low-energy coherent electron beams

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