UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

An analytical threshold voltage model for dual-strained channel PMOSFET

Chinese physics B, 2010-11, Vol.19 (11), p.608-614

秦珊珊张鹤鸣胡辉勇戴显英宣荣喜舒斌

2010

Volltextzugriff (PDF)

Intrinsic Carrier Concentration in Strained Si1-XGex/(101)Si

Materials science forum, 2010-11, Vol.663-665, p.470-472

2010

Volltextzugriff (PDF)

Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation

Wuli xuebao, 2018-01, Vol.67 (2), p.27101

2018

Volltextzugriff (PDF)

Dispersion relation model of valence band in strained Si

Wuli xuebao, 2008-11, Vol.57 (11), p.7228

2008

Volltextzugriff (PDF)

Anisotropy of hole effective mass of strained Si/(001)Si1-xGex

Wuli xuebao, 2009-07, Vol.58 (7), p.4958

2009

Volltextzugriff (PDF)

A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materials

Wuli xuebao, 2011-06, Vol.60 (6), p.65101

2011

Volltextzugriff (PDF)

Determination of conduction band edge characteristics of strained Si/Si1-xGex

Chinese physics (Beijing, China), 2007-12, Vol.16, p.3827

2007

Volltextzugriff (PDF)

Mathematical model of DC characteristic of SiGe charge injection transistors

Wuli xuebao, 2007-02, Vol.56 (2), p.1105

2007

Volltextzugriff (PDF)

First-principles study of hydrogen storage properties of silicene under different Li adsorption components

Wuli xuebao, 2018, Vol.67 (10), p.107103

2018

Volltextzugriff (PDF)

3UCVD deposition SiO2 on SiC wafer and its C-V measurement

Wuli xuebao, 2004-09, Vol.53 (9), p.3225

2004

Volltextzugriff (PDF)

A growth kinetics model of rate decomposition for Si 1− x Ge x alloy based on dimer theory

Chinese physics B, 2014-01, Vol.23 (1), p.15101

2014

Volltextzugriff (PDF)

The model of valence-band dispersion for strained Ge/Si1-xGex

Wuli xuebao, 2012-07, Vol.61 (13), p.137104

2012

Volltextzugriff (PDF)

Anisotropy and isotropy of hole effective mass of strained Ge

Wuli xuebao, 2012, Vol.61 (23), p.237102

2012

Volltextzugriff (PDF)

Valence band structure of strained Si/(111)Si1−xGex

Science China. Physics, mechanics & astronomy, 2010-03, Vol.53 (3), p.454-457

2010

Volltextzugriff (PDF)

Model of electronical conductivity effective mass of strained Si

Wuli xuebao, 2010-09, Vol.59 (9), p.6545

2010

Volltextzugriff (PDF)

Model of hole effective mass of strained Si1－xGex/(111)Si

Wuli xuebao, 2010, Vol.59 (1), p.579

2010

Volltextzugriff (PDF)

Densities of states of strained Si in different crystal systems

Wuli xuebao, 2011, Vol.60 (4), p.47106

2011

Volltextzugriff (PDF)

Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel

Chinese physics (Beijing, China), 2006-06, Vol.15 (6), p.1339-1345

2006

Volltextzugriff (PDF)

Model of intrinsic carrier concentration of strained Si/(001）Si1－xGex

Wuli xuebao, 2010, Vol.59 (3), p.2064

2010

Volltextzugriff (PDF)

Band structure of strained Si1-xGex

Wuli xuebao, 2009, Vol.58 (11), p.7947

2009

Volltextzugriff (PDF)

Band structure of strained Si/(111)Si1-xGex: a first principles investigation

Wuli xuebao, 2008, Vol.57 (9), p.5918

2008

Volltextzugriff (PDF)

Model of transit time for SiGe HBT collector junction depletion-layer

Chinese physics (Beijing, China), 2005-07, Vol.14 (7), p.1439-1443

2005

Volltextzugriff (PDF)

Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET

Wuli xuebao, 2007, Vol.56 (6), p.3504

2007

Volltextzugriff (PDF)

Determination of bandgap in SiGe strained layers using a pn heterojunction C-V

Wuli xuebao, 2004, Vol.53 (1), p.235

2004

Volltextzugriff (PDF)

Junction capacitance models of SiGe HBT

Wuli xuebao, 2004-09, Vol.53 (9), p.3239

2004

Volltextzugriff (PDF)

1 – 25 von 69

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(50)
Mit Volltextzugriff
(32)

Publikationsform

Artikel
(68)
Tagungsberichte
(1)

Sprache

Englisch
(59)
Chinesisch
(16)

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

An analytical threshold voltage model for dual-strained channel PMOSFET

Intrinsic Carrier Concentration in Strained Si1-XGex/(101)Si

Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation

Dispersion relation model of valence band in strained Si

Anisotropy of hole effective mass of strained Si/(001)Si1-xGex

A kinetics model for the chemical vapor deposition growth of SiGe/Si heterojunction materials

Determination of conduction band edge characteristics of strained Si/Si1-xGex

Mathematical model of DC characteristic of SiGe charge injection transistors

First-principles study of hydrogen storage properties of silicene under different Li adsorption components

3UCVD deposition SiO2 on SiC wafer and its C-V measurement

A growth kinetics model of rate decomposition for Si 1− x Ge x alloy based on dimer theory

The model of valence-band dispersion for strained Ge/Si1-xGex

Anisotropy and isotropy of hole effective mass of strained Ge

Valence band structure of strained Si/(111)Si1−xGex

Model of electronical conductivity effective mass of strained Si

Model of hole effective mass of strained Si1－xGex/(111)Si

Densities of states of strained Si in different crystal systems

Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel

Model of intrinsic carrier concentration of strained Si/(001）Si1－xGex

Band structure of strained Si1-xGex

Band structure of strained Si/(111)Si1-xGex: a first principles investigation

Model of transit time for SiGe HBT collector junction depletion-layer

Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET

Determination of bandgap in SiGe strained layers using a pn heterojunction C-V

Junction capacitance models of SiGe HBT

Suchergebnisse filtern