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Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design

Scientific reports, 2021-04, Vol.11 (1), p.8877-8877, Article 8877

2021

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Ab initio study for molecular-scale adsorption, decomposition and desorption on AlN surfaces during MOCVD growth

Scientific reports, 2020-10, Vol.10 (1), p.17840-17840, Article 17840

2020

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The formation mechanism of globally biaxial strain in He+ implanted silicon-on-insulator wafer based on the plastic deformation and smooth sliding of buried SiO2 film

Applied physics letters, 2018-11, Vol.113 (22)

2018

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Gas-Phase Chemical Reaction Mechanism in the Growth of AlN during High-Temperature MOCVD: A Thermodynamic Study

ACS omega, 2020-05, Vol.5 (20), p.11792-11798

2020

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Structure, Electrical Properties, and Thermal Stability of the Mn/Nb Co-Doped Aurivillius-Type Na0.5Bi4.5Ti4O15 High Temperature Piezoelectric Ceramics

Crystals (Basel), 2023-03, Vol.13 (3), p.433

2023

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High Electron Mobility Ge1−xSnx(x > 10%) Folding Space Charge Zone Schottky Diode for Microwave Wireless Power Transfer

IEEE access, 2019, Vol.7, p.127438-127452

2019

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Penetration depth at various Raman excitation wavelengths and stress model for Raman spectrum in biaxially-strained Si

Science China. Physics, mechanics & astronomy, 2013-11, Vol.56 (11), p.2065-2070

2013

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Fabrication and characterization of uniaxially strained SOI with wafer level by mechanical bending and annealing

AIP advances, 2018-04, Vol.8 (4), p.045308-045308-6

2018

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Fabrication of ultra-sensitive photoelectrochemical aptamer biosensor: Based on semiconductor/DNA interfacial multifunctional reconciliation via 2D-C3N4

Biosensors & bioelectronics, 2020-02, Vol.150, p.111903-111903, Article 111903

2020

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Enhancement of the ssDNA probe anchoring capacity on photoelectrochemical biosensor by poly-adenine modified ssDNA probe/Au interface

Microchemical journal, 2024-09, Vol.204, p.111043, Article 111043

2024

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Universal Hydrogen-Treated TiO2 Nanorod Array/Ti2COX MXene PEC Aptamer Sensor Modulated by the Transport Characteristic of Photogenerated Holes

Analytical chemistry (Washington), 2023-05, Vol.95 (19), p.7560-7568

2023

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High photocatalytic performance of g-C3N4/WS2 heterojunction from first principles

Chemical physics, 2021-05, Vol.545, p.111141, Article 111141

2021

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Universal Hydrogen-Treated TiO 2 Nanorod Array/Ti 2 CO X MXene PEC Aptamer Sensor Modulated by the Transport Characteristic of Photogenerated Holes

Analytical chemistry (Washington), 2023-05, Vol.95 (19), p.7560-7568

2023

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Universal Hydrogen-Treated TiO2 Nanorod Array/Ti2CO X MXene PEC Aptamer Sensor Modulated by the Transport Characteristic of Photogenerated Holes

Analytical chemistry (Washington), 2023-05, Vol.95 (19), p.7560-7568

2023

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Calculation of Ge1-xYx (Sn, Pb) work function along (100), (110), (111) directions based on first principle

Semiconductor science and technology, 2020-08, Vol.35 (8)

2020

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Enhanced Stability and Epitaxial Growth Mechanism of the Honeycomb Borophene Monolayer on a Two-Dimensional Ti2C Substrate

Journal of physical chemistry. C, 2021-04, Vol.125 (16), p.8589-8596

2021

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Al-doped GeS nanosheet as a promising sensing material for O-contained volatile organic compounds detection

Applied surface science, 2020-10, Vol.527, p.146797, Article 146797

2020

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Time-Dependent Degradation Mechanism of 1.2 kV SiC MOSFET Under Long-Term High-Temperature Gate Bias Stress

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1162-1167

2023

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Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (21), p.e2200454-n/a

2022

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Electrical, optical and mechanical properties of monolayer MoTe 2 for applications in wearable optoelectronic devices

Physica scripta, 2024-04, Vol.99 (4), p.45972

2024

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Calculation of Ge 1-x Y x (Sn, Pb) work function along (100), (110), (111) directions based on first principle

Semiconductor science and technology, 2020-08, Vol.35 (8), p.85026

2020

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Valence band structure of strained Si/(111)Si1−xGex

Science China. Physics, mechanics & astronomy, 2010-03, Vol.53 (3), p.454-457

2010

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Kinetic Monte Carlo Simulation of the Growth of AlN Films by Metal Organic Chemical Vapor Deposition

physica status solidi (b), 2019-12, Vol.256 (12), p.n/a

2019

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Studies of band structures and electrical properties of uniaxially strained phosphorene by a simplified two-band k · p method

Semiconductor science and technology, 2020-04, Vol.35 (4), p.45002

2020

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Enhanced Stability and Epitaxial Growth Mechanism of the Honeycomb Borophene Monolayer on a Two-Dimensional Ti 2 C Substrate

Journal of physical chemistry. C, 2021-04, Vol.125 (16), p.8589-8596

2021

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Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design

Ab initio study for molecular-scale adsorption, decomposition and desorption on AlN surfaces during MOCVD growth

The formation mechanism of globally biaxial strain in He+ implanted silicon-on-insulator wafer based on the plastic deformation and smooth sliding of buried SiO2 film

Gas-Phase Chemical Reaction Mechanism in the Growth of AlN during High-Temperature MOCVD: A Thermodynamic Study

Structure, Electrical Properties, and Thermal Stability of the Mn/Nb Co-Doped Aurivillius-Type Na0.5Bi4.5Ti4O15 High Temperature Piezoelectric Ceramics

High Electron Mobility Ge1−xSnx(x > 10%) Folding Space Charge Zone Schottky Diode for Microwave Wireless Power Transfer

Penetration depth at various Raman excitation wavelengths and stress model for Raman spectrum in biaxially-strained Si

Fabrication and characterization of uniaxially strained SOI with wafer level by mechanical bending and annealing

Fabrication of ultra-sensitive photoelectrochemical aptamer biosensor: Based on semiconductor/DNA interfacial multifunctional reconciliation via 2D-C3N4

Enhancement of the ssDNA probe anchoring capacity on photoelectrochemical biosensor by poly-adenine modified ssDNA probe/Au interface

Universal Hydrogen-Treated TiO2 Nanorod Array/Ti2COX MXene PEC Aptamer Sensor Modulated by the Transport Characteristic of Photogenerated Holes

High photocatalytic performance of g-C3N4/WS2 heterojunction from first principles

Universal Hydrogen-Treated TiO 2 Nanorod Array/Ti 2 CO X MXene PEC Aptamer Sensor Modulated by the Transport Characteristic of Photogenerated Holes

Universal Hydrogen-Treated TiO2 Nanorod Array/Ti2CO X MXene PEC Aptamer Sensor Modulated by the Transport Characteristic of Photogenerated Holes

Calculation of Ge1-xYx (Sn, Pb) work function along (100), (110), (111) directions based on first principle

Enhanced Stability and Epitaxial Growth Mechanism of the Honeycomb Borophene Monolayer on a Two-Dimensional Ti2C Substrate

Al-doped GeS nanosheet as a promising sensing material for O-contained volatile organic compounds detection

Time-Dependent Degradation Mechanism of 1.2 kV SiC MOSFET Under Long-Term High-Temperature Gate Bias Stress

Photoelectrochemical Performance Improving Mechanism: Hybridization Appearing at the Energy Band of BiVO4 Photoanode by Doped Quantum Layers Modification

Electrical, optical and mechanical properties of monolayer MoTe 2 for applications in wearable optoelectronic devices

Calculation of Ge 1-x Y x (Sn, Pb) work function along (100), (110), (111) directions based on first principle

Valence band structure of strained Si/(111)Si1−xGex

Kinetic Monte Carlo Simulation of the Growth of AlN Films by Metal Organic Chemical Vapor Deposition

Studies of band structures and electrical properties of uniaxially strained phosphorene by a simplified two-band k · p method

Enhanced Stability and Epitaxial Growth Mechanism of the Honeycomb Borophene Monolayer on a Two-Dimensional Ti 2 C Substrate

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