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Distribution of the built-in field extracted from switching dynamics in HfO2-based ferroelectric capacitor

AIP advances, 2024-06, Vol.14 (6), p.065010-065010-6

2024

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Structure and magnetic properties of a class of spinel high-entropy oxides

Journal of magnetism and magnetic materials, 2021-10, Vol.535, p.168063, Article 168063

2021

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The physical origin of inhomogeneous field within HfO2-based ferroelectric capacitor

Applied physics letters, 2024-03, Vol.124 (10)

2024

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Fabrication and magnetic property of novel (Co,Zn,Fe,Mn,Ni)3O4 high-entropy spinel oxide

Journal of magnetism and magnetic materials, 2021-10, Vol.536, p.168123, Article 168123

2021

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Experimental investigation of dipole formation and modulation at Hf 0.5 Zr 0.5 O 2 /SiO 2 interface

Physica scripta, 2024-08, Vol.99 (8), p.85992

2024

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Experimental investigation of dipole formation and modulation at Hf0.5Zr0.5O2/SiO2 interface

Physica scripta, 2024-08, Vol.99 (8)

2024

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Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C)

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.5150-5155

2024

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Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors

IEEE transactions on electron devices, 2024-08, Vol.71 (8), p.5081-5088

2024

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Impact of Top SiO } Interlayer Thickness on Memory Window of Si Channel FeFET With TiN/SiO } /Hf } Zr } O } /SiO } /Si (MIFIS) Gate Structure

IEEE transactions on electron devices, 2024-09, p.1-8

2024

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Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O

IEEE electron device letters, 2024-05, Vol.45 (5), p.825-828

2024

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Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field Effect Transistors

2024 IEEE International Memory Workshop (IMW), 2024, p.1-4

2024

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Two distinct domains of the glucagon-like peptide-1 receptor control peptide-mediated biased agonism

The Journal of biological chemistry, 2018-06, Vol.293 (24), p.9370-9387

2018

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Vapor phase nucleation and sedimentation of dispersed nanodiamonds by MPCVD

Powder technology, 2024-03, Vol.436, p.119507, Article 119507

2024

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Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics

The journal of physical chemistry letters, 2024-09, Vol.15 (36), p.9301-9310

2024

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Distinct roles of the extracellular surface residues of glucagon-like peptide-1 receptor in β-arrestin 1/2 signaling

European journal of pharmacology, 2024-04, Vol.968, p.176419-176419, Article 176419

2024

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Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors

Small (Weinheim an der Bergstrasse, Germany), 2022-05, Vol.18 (20), p.e2107650-n/a

2022

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High-Sensitivity DTSs Based on Diamond With a Low Doping Drift Layer

IEEE sensors journal, 2024-07, Vol.24 (13), p.20368-20374

2024

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Contact optimisation strategy for wafer-scale field-effect transistors based on two-dimensional semiconductors

Journal of materials science & technology, 2023-01, Vol.133, p.230-237

2023

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G protein-coupled receptor GPR160 is associated with apoptosis and cell cycle arrest of prostate cancer cells

Oncotarget, 2016-03, Vol.7 (11), p.12823-12839

2016

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人如其食：食物性别刻板印象及对人物评价的影响

Acta psychologica sinica, 2021-03, Vol.53 (3), p.259-272

2021

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Measurement Data Restoring Method of Shoe Last Based on Numerical Cutting Technology

Advanced materials research, 2012, Vol.472-475, p.1771-1776

2012

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Distribution of the built-in field extracted from switching dynamics in HfO2-based ferroelectric capacitor

Structure and magnetic properties of a class of spinel high-entropy oxides

The physical origin of inhomogeneous field within HfO2-based ferroelectric capacitor

Fabrication and magnetic property of novel (Co,Zn,Fe,Mn,Ni)3O4 high-entropy spinel oxide

Experimental investigation of dipole formation and modulation at Hf 0.5 Zr 0.5 O 2 /SiO 2 interface

Experimental investigation of dipole formation and modulation at Hf0.5Zr0.5O2/SiO2 interface

Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C)

Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors

Impact of Top SiO } Interlayer Thickness on Memory Window of Si Channel FeFET With TiN/SiO } /Hf } Zr } O } /SiO } /Si (MIFIS) Gate Structure

Enlargement of Memory Window of Si Channel FeFET by Inserting Al₂O₃ Interlayer on Ferroelectric Hf₀.₅Zr₀.₅O

Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field Effect Transistors

Two distinct domains of the glucagon-like peptide-1 receptor control peptide-mediated biased agonism

Vapor phase nucleation and sedimentation of dispersed nanodiamonds by MPCVD

Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics

Distinct roles of the extracellular surface residues of glucagon-like peptide-1 receptor in β-arrestin 1/2 signaling

Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors

High-Sensitivity DTSs Based on Diamond With a Low Doping Drift Layer

Contact optimisation strategy for wafer-scale field-effect transistors based on two-dimensional semiconductors

G protein-coupled receptor GPR160 is associated with apoptosis and cell cycle arrest of prostate cancer cells

人如其食：食物性别刻板印象及对人物评价的影响

Measurement Data Restoring Method of Shoe Last Based on Numerical Cutting Technology

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