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Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

Advanced functional materials, 2019-11, Vol.29 (48), p.n/a

2019

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High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

Applied physics letters, 2015-01, Vol.106 (2)

2015

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High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD

Applied physics letters, 2019-01, Vol.114 (4)

2019

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Enhanced Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Incorporating High-Reflective n-Type Electrode Made of Cr/Al

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.2992-2996

2019

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High Light Extraction Efficiency of Deep Ultraviolet LEDs Enhanced Using Nanolens Arrays

IEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2498-2503

2018

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Enhanced Optical and Thermal Performance of Eutectic Flip-Chip Ultraviolet Light-Emitting Diodes via AlN-Doped-Silicone Encapsulant

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.467-471

2017

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Enhancement-mode CdS nanobelts field effect transistors and phototransistors with HfO2 passivation

Applied physics letters, 2019-03, Vol.114 (11)

2019

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Progress and Perspective of Near-Ultraviolet and Deep-Ultraviolet Light-Emitting Diode Packaging Technologies

Journal of electronic packaging, 2019-12, Vol.141 (4)

2019

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Investigation on Thermal Characterization of Eutectic Flip-Chip UV-LEDs With Different Bonding Voidage

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1174-1179

2017

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Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

IEEE photonics journal, 2019-08, Vol.11 (4), p.1-6

2019

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Enhanced Wall-Plug Efficiency in AlGaN-Based Deep-Ultraviolet LED via a Novel Honeycomb Hole-Shaped Structure

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.2997-3002

2019

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Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate

Frontiers of Optoelectronics, 2021-12, Vol.14 (4), p.507-512

2021

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Fabrication of wafer-scale nanoporous AlGaN-based deep ultraviolet distributed Bragg reflectors via one-step selective wet etching

Scientific reports, 2022-12, Vol.12 (1), p.22434-22434, Article 22434

2022

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The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer

Applied physics letters, 2018-01, Vol.112 (3)

2018

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Controlled synthesis of ZnO hollow microspheres via precursor-template method and its gas sensing property

Applied surface science, 2012-09, Vol.258 (22), p.8431-8438

2012

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Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer

Nanoscale research letters, 2019-11, Vol.14 (1), p.347-8, Article 347

2019

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III-Nitride Deep UV LED Without Electron Blocking Layer

IEEE photonics journal, 2019-04, Vol.11 (2), p.1-11

2019

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Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes

IEEE electron device letters, 2014-08, Vol.35 (8), p.838-840

2014

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Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives

InfoMat, 2023-10, Vol.5 (10), p.n/a

2023

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Controllable synthesis of high-aspect-ratio monolayer MoS2 nano-microribbons for high-performance phototransistors

Science China materials, 2023-10, Vol.66 (10), p.3941-3948

2023

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Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates

Journal of physics. D, Applied physics, 2016-10, Vol.49 (41)

2016

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Enhanced the Optical Power of AlGaN-Based Deep Ultraviolet Light-Emitting Diode by Optimizing Mesa Sidewall Angle

IEEE photonics journal, 2018-08, Vol.10 (4), p.1-7

2018

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Ripening-resistance of Pd on TiO2(110) from first-principles kinetics

Frontiers of Optoelectronics (Online), 2020-12, Vol.13 (4), p.409-417

2020

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Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers

IEEE photonics journal, 2013-08, Vol.5 (4), p.8200309-8200309

2013

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Improved the AlGaN-Based Ultraviolet LEDs Performance With Super-Lattice Structure Last Barrier

IEEE photonics journal, 2018-08, Vol.10 (4), p.1-7

2018

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Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD

Enhanced Light Extraction Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Incorporating High-Reflective n-Type Electrode Made of Cr/Al

High Light Extraction Efficiency of Deep Ultraviolet LEDs Enhanced Using Nanolens Arrays

Enhanced Optical and Thermal Performance of Eutectic Flip-Chip Ultraviolet Light-Emitting Diodes via AlN-Doped-Silicone Encapsulant

Enhancement-mode CdS nanobelts field effect transistors and phototransistors with HfO2 passivation

Progress and Perspective of Near-Ultraviolet and Deep-Ultraviolet Light-Emitting Diode Packaging Technologies

Investigation on Thermal Characterization of Eutectic Flip-Chip UV-LEDs With Different Bonding Voidage

Enhanced Performance of an AlGaN-Based Deep-Ultraviolet LED Having Graded Quantum Well Structure

Enhanced Wall-Plug Efficiency in AlGaN-Based Deep-Ultraviolet LED via a Novel Honeycomb Hole-Shaped Structure

Growth of InGaN-based blue-LED on AlN/sapphire sputtered with different oxygen flow rate

Fabrication of wafer-scale nanoporous AlGaN-based deep ultraviolet distributed Bragg reflectors via one-step selective wet etching

The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer

Controlled synthesis of ZnO hollow microspheres via precursor-template method and its gas sensing property

Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer

III-Nitride Deep UV LED Without Electron Blocking Layer

Laterally Coupled IZO-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes

Integrating 2D layered materials with 3D bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives

Controllable synthesis of high-aspect-ratio monolayer MoS2 nano-microribbons for high-performance phototransistors

Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on AlxGa1−xN templates

Enhanced the Optical Power of AlGaN-Based Deep Ultraviolet Light-Emitting Diode by Optimizing Mesa Sidewall Angle

Ripening-resistance of Pd on TiO2(110) from first-principles kinetics

Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers

Improved the AlGaN-Based Ultraviolet LEDs Performance With Super-Lattice Structure Last Barrier

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