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UV hybrid photon detector based on GaN photocathodes and Si low gain avalanche diode

Journal of instrumentation, 2024-07, Vol.19 (7), p.P07020

2024

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Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

Journal of electronic materials, 2016-04, Vol.45 (4), p.2013-2018

2016

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DC and RF Performance of AlN/GaN MOS-HEMTs

IEICE transactions on electronics, 2011, Vol.E94-C (5), p.835-841

2011

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Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Sensors and actuators. B, Chemical, 2013-01, Vol.176, p.708-712

2013

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High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

IEEE electron device letters, 2011-12, Vol.32 (12), p.1677-1679

2011

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Thermal emittance and response time measurements of a GaN photocathode

Journal of applied physics, 2009-04, Vol.105 (8), p.083715-083715-4

2009

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Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template

Optics express, 2012-03, Vol.20 (7), p.8093-8099

2012

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High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN template layer

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-05, Vol.30 (3), p.030603-030603-4

2012

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Electrical characterization of atomic layer deposited Al2O3/InN interfaces

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2016-01, Vol.34 (1)

2016

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Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor

ECS transactions, 2008-10, Vol.16 (7), p.127-137

2008

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Epitaxial Growth of High Quality GaN Films on Lattice Matched Metallic Layers

ECS transactions, 2015, Vol.66 (1), p.113-117

2015

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Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

Applied physics letters, 2008-07, Vol.93 (3)

2008

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Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-01, Vol.30 (1)

2012

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Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electronmobility transistors

Applied physics letters, 2008-07, Vol.93 (3), p.032109-032109-3

2008

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Electrical and optical properties of doped p -type GaN superlattices

Applied physics letters, 2006-09, Vol.89 (11), p.112127-112127-3

2006

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ZnO Nanowire/p-GaN Heterojunction LEDs

MRS proceedings, 2007, Vol.1018, Article 1018-EE12-08

2007

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Injection and Avalanche Electroluminescence of \hbox} \hbox} \hbox} \hbox} \hbox Multiple Quantum Wells

IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.1010-1013

2008

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Scaling and high-frequency performance of AlN/GaN HEMTs

2011 IEEE International Symposium on Radio-Frequency Integration Technology, 2011, p.209-212

2011

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Properties of CdZnO/ZnO Heterostructures for UV Light Emitters

ECS transactions, 2006, Vol.3 (5), p.323-331

2006

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AlGaN/GaN High Electron Mobility Transistors for High-Power and Low-Noise Applications

稀土学报（英文版）, 2004, Vol.22 (z3), p.279-281

2004

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Optical Characterization of Zn1-xCdxO Alloys Grown by Molecular-Beam Epitaxy

ECS transactions, 2006, Vol.3 (5), p.391-398

2006

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Epitaxial Growth of High Quality GaN Films on Lattice Matched Metallic Layers

Meeting abstracts (Electrochemical Society), 2015-04, Vol.MA2015-01 (23), p.1444-1444

2015

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GaN-Based Devices for Reliable Operation at Very High Temperatures

ECS transactions, 2006, Vol.3 (5), p.349-357

2006

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Improved Mobilities and Resistivities in Modulation-Doped P-type AlGaN / GaN Superlattices

MRS proceedings, 2001, Vol.693, Article I12.11.1

2001

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Very High Channel Conductivities in Low-Defect AlN/GaN HEMTs Grown by MBE

Meeting abstracts (Electrochemical Society), 2008-08, Vol.MA2008-02 (34), p.2262-2262

2008

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UV hybrid photon detector based on GaN photocathodes and Si low gain avalanche diode

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

DC and RF Performance of AlN/GaN MOS-HEMTs

Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

Thermal emittance and response time measurements of a GaN photocathode

Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template

High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN template layer

Electrical characterization of atomic layer deposited Al2O3/InN interfaces

Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor

Epitaxial Growth of High Quality GaN Films on Lattice Matched Metallic Layers

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electronmobility transistors

Electrical and optical properties of doped p -type GaN superlattices

ZnO Nanowire/p-GaN Heterojunction LEDs

Injection and Avalanche Electroluminescence of \hbox} \hbox} \hbox} \hbox} \hbox Multiple Quantum Wells

Scaling and high-frequency performance of AlN/GaN HEMTs

Properties of CdZnO/ZnO Heterostructures for UV Light Emitters

AlGaN/GaN High Electron Mobility Transistors for High-Power and Low-Noise Applications

Optical Characterization of Zn1-xCdxO Alloys Grown by Molecular-Beam Epitaxy

Epitaxial Growth of High Quality GaN Films on Lattice Matched Metallic Layers

GaN-Based Devices for Reliable Operation at Very High Temperatures

Improved Mobilities and Resistivities in Modulation-Doped P-type AlGaN / GaN Superlattices

Very High Channel Conductivities in Low-Defect AlN/GaN HEMTs Grown by MBE

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