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Enhanced vertical transport in p-type AlGaN∕GaN superlattices

Applied physics letters, 2004-11, Vol.85 (22), p.5275-5277

2004

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Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment

Physica status solidi. PSS-RRL. Rapid research letters, 2011-02, Vol.5 (2), p.74-76

2011

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Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Applied physics letters, 2008-08, Vol.93 (8), p.082111-082111-3

2008

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Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

Applied physics letters, 2010-05, Vol.96 (20)

2010

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dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

Applied physics letters, 2001-10, Vol.79 (14), p.2196-2198

2001

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Development of enhancement mode AlN/GaN high electron mobility transistors

Applied physics letters, 2009-06, Vol.94 (26), p.263505-263505-3

2009

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Improvement of electroluminescent performance of n -ZnO/AlN/ p -GaN light-emitting diodes by optimizing the AlN barrier layer

Journal of applied physics, 2011-05, Vol.109 (9), p.093708-093708-6

2011

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Direct measurement of curvature-dependent ion etching of GaN

Journal of applied physics, 2005-10, Vol.98 (8), p.083504-083504-7

2005

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Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN ∕ GaN heterostructure transistors

Applied physics letters, 2007-12, Vol.91 (23), p.232116-232116-3

2007

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Structure and composition of GaN(0001) A and B surfaces

Journal of applied physics, 1999-06, Vol.85 (11), p.7697-7704

1999

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Optimization of conductivity in p -type GaN ∕ InGaN -graded superlattices

Journal of applied physics, 2005-04, Vol.97 (8), p.083715-083715-5

2005

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Fabrication of Hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-Emitting Diodes

Japanese Journal of Applied Physics, 2005-10, Vol.44 (10R), p.7296

2005

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Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium

Electronics letters, 2010-02, Vol.46 (4), p.301-302

2010

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Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths

Journal of nanoscience and nanotechnology, 2002-06, Vol.2 (3-4), p.325

2002

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ALD Al2O3 passivated MBE-grown AlGaN∕GaN HEMTs on 6H-SiC

Electronics letters, 2007-01, Vol.43 (2), p.127-128

2007

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Comparison of electrical properties and deep traps in p-AlxGa1−xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

Journal of applied physics, 2009-10, Vol.106 (7)

2009

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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an Al2O3/SiNx Dielectric Layer

IEEE electron device letters, 2009-09, Vol.30 (9), p.913-915

2009

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Hexagonal growth spirals on GaN grown by molecular-beam epitaxy: Kinetics versus thermodynamics

Applied physics letters, 2001-04, Vol.78 (16), p.2315-2317

2001

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Optical and morphological properties of MBE grown wurtzite CdxZn1−xO thin films

Optical materials, 2007-10, Vol.30 (2), p.346-350

2007

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Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

Solid-state electronics, 2001-12, Vol.45 (12), p.1979-1985

2001

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Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures

Applied physics letters, 2008-01, Vol.92 (4)

2008

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In situ control of gan growth by molecular beam epitaxy

Journal of electronic materials, 1997-03, Vol.26 (3), p.272-280

1997

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Development of MgZnO-ZnO-AlGaN Heterostructures for Ultraviolet Light Emitting Applications

Journal of electronic materials, 2005-04, Vol.34 (4), p.416-423

2005

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Normally-on/off AlN/GaN high electron mobility transistors

Physica status solidi. C, 2010-10, Vol.7 (10), p.2415-2418

2010

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Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2486-2488

2011

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Enhanced vertical transport in p-type AlGaN∕GaN superlattices

Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

Development of enhancement mode AlN/GaN high electron mobility transistors

Improvement of electroluminescent performance of n -ZnO/AlN/ p -GaN light-emitting diodes by optimizing the AlN barrier layer

Direct measurement of curvature-dependent ion etching of GaN

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN ∕ GaN heterostructure transistors

Structure and composition of GaN(0001) A and B surfaces

Optimization of conductivity in p -type GaN ∕ InGaN -graded superlattices

Fabrication of Hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-Emitting Diodes

Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium

Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths

ALD Al2O3 passivated MBE-grown AlGaN∕GaN HEMTs on 6H-SiC

Comparison of electrical properties and deep traps in p-AlxGa1−xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an Al2O3/SiNx Dielectric Layer

Hexagonal growth spirals on GaN grown by molecular-beam epitaxy: Kinetics versus thermodynamics

Optical and morphological properties of MBE grown wurtzite CdxZn1−xO thin films

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures

In situ control of gan growth by molecular beam epitaxy

Development of MgZnO-ZnO-AlGaN Heterostructures for Ultraviolet Light Emitting Applications

Normally-on/off AlN/GaN high electron mobility transistors

Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors

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