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Underlap channel silicon-on-insulator quantum dot floating-gate MOSFET for low-power memory applications

Journal of computational electronics, 2016-12, Vol.15 (4), p.1563-1569

2016

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A versatile compact model of resistive random-access memory (RRAM)

Solid-state electronics, 2024-10, Vol.220, p.108989, Article 108989

2024

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Impact of Self-Heating on Negative-Capacitance FinFET: Device-Circuit Interaction

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1420-1424

2021

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A Novel Neural Network-Based Transistor Compact Model Including Self-Heating

IEEE electron device letters, 2024-08, Vol.45 (8), p.1512-1515

2024

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Seismic response control of parallel structures connected by passive shape memory alloy damper

AIP Conference Proceedings, 2023, Vol.2963 (1)

2023

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Impact of Variability on Processor Performance in Negative Capacitance FinFET Technology

IEEE transactions on circuits and systems. I, Regular papers, 2020-09, Vol.67 (9), p.3127-3137

2020

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A Simulation Study of NBTI Impact on 14-nm Node FinFET Technology for Logic Applications: Device Degradation to Circuit-Level Interaction

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.271-278

2019

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Device to Circuit Framework for Activity-Dependent NBTI Aging in Digital Circuits

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.316-323

2019

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Subthermionic negative capacitance ion sensitive field-effect transistor

Applied physics letters, 2020-04, Vol.116 (17)

2020

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Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors

IEEE transactions on electron devices, 2024-07, Vol.71 (7), p.4240-4246

2024

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Transistor Self-Heating: The Rising Challenge for Semiconductor Testing

2021 IEEE 39th VLSI Test Symposium (VTS), 2021, p.1-7

2021

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NBTI-Related Variability Impact on 14-nm Node FinFET SRAM Performance and Static Power: Correlation to Time Zero Fluctuations

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4846-4853

2018

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Temperature- and variability-aware compact modeling of ferroelectric FDSOI FET for memory and emerging applications

Solid-state electronics, 2024-08, Vol.218, p.108954, Article 108954

2024

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Ferroelectric FDSOI FET modeling for memory and logic applications

Solid-state electronics, 2023-02, Vol.200, p.108554, Article 108554

2023

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Nontraditional Design of Dynamic Logics Using FDSOI for Ultra-Efficient Computing

IEEE journal on exploratory solid-state computational devices and circuits, 2023-06, Vol.9 (1), p.74-82

2023

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Compact Modeling of Negative-Capacitance FDSOI FETs for Circuit Simulations

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2710-2716

2020

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Compact Modeling of Temperature-Dependent Gate-Induced Drain Leakage Including Low-Field Effects

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.2892-2897

2019

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Anomalous GIDL Effect With Back Bias in FinFET: Physical Insights and Compact Modeling

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3261-3267

2021

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Symmetric BSIM-SOI-Part I: A Compact Model for Dynamically Depleted SOI MOSFETs

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2284-2292

2024

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Symmetric BSIM-SOI-Part II: A Compact Model for Partially Depleted SOI MOSFETs

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.2293-2300

2024

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Compact Model for Trap Assisted Tunneling based GIDL

2022 Device Research Conference (DRC), 2022, p.1-2

2022

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BSA/ HAS interaction and antioxidant evaluation of newly synthesized benzoxazine Derivatives: Spectrophotometric and molecular docking studies

Journal of molecular liquids, 2023-11, Vol.389, p.122917, Article 122917

2023

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Modified ITAT Model for Data Retention in Nanocrystals Based Flash Memory Gate Stack

Journal of nano research, 2017-01, Vol.45, p.1-11

2017

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Compact Modeling and Experimental Validation of Reverse Mode Impact Ionization in LDMOS Transistors within the BSIM-BULK Framework

2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024, p.1-3

2024

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Modeling of Induced Gate Thermal Noise Including Back-Bias Effect in FDSOI MOSFET

IEEE microwave and wireless components letters, 2018-07, Vol.28 (7), p.597-599

2018

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Underlap channel silicon-on-insulator quantum dot floating-gate MOSFET for low-power memory applications

A versatile compact model of resistive random-access memory (RRAM)

Impact of Self-Heating on Negative-Capacitance FinFET: Device-Circuit Interaction

A Novel Neural Network-Based Transistor Compact Model Including Self-Heating

Seismic response control of parallel structures connected by passive shape memory alloy damper

Impact of Variability on Processor Performance in Negative Capacitance FinFET Technology

A Simulation Study of NBTI Impact on 14-nm Node FinFET Technology for Logic Applications: Device Degradation to Circuit-Level Interaction

Device to Circuit Framework for Activity-Dependent NBTI Aging in Digital Circuits

Subthermionic negative capacitance ion sensitive field-effect transistor

Compact Modeling of Impact Ionization and Conductivity Modulation in LDMOS Transistors

Transistor Self-Heating: The Rising Challenge for Semiconductor Testing

NBTI-Related Variability Impact on 14-nm Node FinFET SRAM Performance and Static Power: Correlation to Time Zero Fluctuations

Temperature- and variability-aware compact modeling of ferroelectric FDSOI FET for memory and emerging applications

Ferroelectric FDSOI FET modeling for memory and logic applications

Nontraditional Design of Dynamic Logics Using FDSOI for Ultra-Efficient Computing

Compact Modeling of Negative-Capacitance FDSOI FETs for Circuit Simulations

Compact Modeling of Temperature-Dependent Gate-Induced Drain Leakage Including Low-Field Effects

Anomalous GIDL Effect With Back Bias in FinFET: Physical Insights and Compact Modeling

Symmetric BSIM-SOI-Part I: A Compact Model for Dynamically Depleted SOI MOSFETs

Symmetric BSIM-SOI-Part II: A Compact Model for Partially Depleted SOI MOSFETs

Compact Model for Trap Assisted Tunneling based GIDL

BSA/ HAS interaction and antioxidant evaluation of newly synthesized benzoxazine Derivatives: Spectrophotometric and molecular docking studies

Modified ITAT Model for Data Retention in Nanocrystals Based Flash Memory Gate Stack

Compact Modeling and Experimental Validation of Reverse Mode Impact Ionization in LDMOS Transistors within the BSIM-BULK Framework

Modeling of Induced Gate Thermal Noise Including Back-Bias Effect in FDSOI MOSFET

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