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Correlation between electromigration and Cu-contact angle after de-wetting

Microelectronic engineering, 2006-11, Vol.83 (11), p.2373-2376

2006

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Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65 nm technology node

Microelectronic engineering, 2006-11, Vol.83 (11), p.2094-2100

2006

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Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects

Microelectronic engineering, 2005-12, Vol.82 (3), p.587-593

2005

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Deconvolution of very low primary energy SIMS depth profiles

Applied surface science, 2006-07, Vol.252 (19), p.6478-6481

2006

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AFM study of the SIMS beam induced roughness in monocrystalline silicon in presence of initial surface or bulk defects of nanometric size

Applied surface science, 2006-07, Vol.252 (19), p.6448-6451

2006

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SIMS depth profiling of ultrashallow P, Ge and As implants in Si using MCs2+ ions

Surface and interface analysis, 2002-08, Vol.34 (1), p.472-476

2002

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Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Physical review. B, Condensed matter and materials physics, 2010-01, Vol.81 (2), Article 020501

2010

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Deconvolution of SIMS depth profiles: Towards simple and faster techniques

Applied surface science, 2008-12, Vol.255 (5), p.1946-1958

2008

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Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon

Applied surface science, 2004-06, Vol.231, p.678-683

2004

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SIMS quantification of thick Si1−x Gex films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar+ beam

Surface and interface analysis, 2013-01, Vol.45 (1), p.376-380

2013

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Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at

Surface and interface analysis, 2013-01, Vol.45 (1), p.369-372

2013

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Ultra-low energy SIMS analysis of boron deltas in silicon

Journal of crystal growth, 2002-11, Vol.245 (1), p.1-8

2002

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Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments

Applied surface science, 2004-06, Vol.231, p.668-672

2004

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In situ RHEED monitoring of carbon incorporation during SiGeC/Si(001) growth in a UHV-CVD system

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.246-251

2002

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Toward a better reliability in the deconvolution of SIMS depth profiles

Surface and interface analysis, 1998-12, Vol.26 (13), p.974-983

1998

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Study of Ge bonding and distribution in plasma oxides of Si1−xGex alloys

Applied physics letters, 1998-05, Vol.72 (21), p.2748-2750

1998

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Deconvolution of SIMS Depth Profiles of Boron in Silicon

Surface and interface analysis, 1996-10, Vol.24 (11), p.733-745

1996

Volltextzugriff (PDF)

La régionalisation sans les inégalités: Les politiques régionales d’éducation en France et en Allemagne

Dupuy, Claire

2017

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Effectiveness and Limits of the Deconvolution of SIMS Depth Profiles of Boron in Silicon

Surface and interface analysis, 1997-06, Vol.25 (6), p.464-477

1997

Volltextzugriff (PDF)

Imaging by atomic force microscopy of the electrical properties difference of the facets of oxygen-ion-induced ripple topography in silicon

Applied surface science, 2004-06, Vol.231, p.136-140

2004

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Feux de végétation: Comprendre leur diversité et leur évolution

2022

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Journalistes, des salariés comme les autres ? : Représenter, participer, mobiliser

Camille Dupuy

2016

Volltextzugriff (PDF)

Electron mobility enhancement in a strained Si channel

Journal of crystal growth, 1995-12, Vol.157 (1), p.367-372

1995

Volltextzugriff (PDF)

CT of malignant anal canal tumors

Radiographics, 1990-05, Vol.10 (3), p.433

1990

Volltextzugriff (PDF)

The influence of growth techniques on the structure of epitaxial ErSi1.7 on Si(111)

Applied surface science, 1993-03, Vol.65-66, p.704-711

1993

Volltextzugriff (PDF)

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Correlation between electromigration and Cu-contact angle after de-wetting

Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65 nm technology node

Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects

Deconvolution of very low primary energy SIMS depth profiles

AFM study of the SIMS beam induced roughness in monocrystalline silicon in presence of initial surface or bulk defects of nanometric size

SIMS depth profiling of ultrashallow P, Ge and As implants in Si using MCs2+ ions

Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Deconvolution of SIMS depth profiles: Towards simple and faster techniques

Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon

SIMS quantification of thick Si1−x Gex films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar+ beam

Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at

Ultra-low energy SIMS analysis of boron deltas in silicon

Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments

In situ RHEED monitoring of carbon incorporation during SiGeC/Si(001) growth in a UHV-CVD system

Toward a better reliability in the deconvolution of SIMS depth profiles

Study of Ge bonding and distribution in plasma oxides of Si1−xGex alloys

Deconvolution of SIMS Depth Profiles of Boron in Silicon

La régionalisation sans les inégalités: Les politiques régionales d’éducation en France et en Allemagne

Effectiveness and Limits of the Deconvolution of SIMS Depth Profiles of Boron in Silicon

Imaging by atomic force microscopy of the electrical properties difference of the facets of oxygen-ion-induced ripple topography in silicon

Feux de végétation: Comprendre leur diversité et leur évolution

Journalistes, des salariés comme les autres ? : Représenter, participer, mobiliser

Electron mobility enhancement in a strained Si channel

CT of malignant anal canal tumors

The influence of growth techniques on the structure of epitaxial ErSi1.7 on Si(111)

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