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Inter-edge-mode scattering in a high-mobility strained silicon two-dimensional electron system

Journal of physics. Condensed matter, 2000-02, Vol.12 (8), p.1811-1818

2000

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Si/SiGe n-type inverted modulation doping using ion implantation

Thin solid films, 2000-07, Vol.369 (1-2), p.324-327

2000

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Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.496-500

2001

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Schottky gating high mobility Si/Si1-xGex 2D electron systems

Thin solid films, 2000-07, Vol.369 (1-2), p.316-319

2000

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Si/Si1-xGex heterostructure field effect transistors fabricated using a low thermal budget CMOS process

Microelectronic engineering, 2000-06, Vol.53 (1-4), p.209-212

2000

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Surface acoustic wave study of a double layer AlGaAs/GaAs 2D hole system

Physica. B, Condensed matter, 2001-04, Vol.298 (1-4), p.70-73

2001

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The use of wide ballistic cavities to investigate local weak localization processes induced by geometric scattering

Semiconductor science and technology, 1996-08, Vol.11 (8), p.1189-1197

1996

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FQHE states of high mobility n-Si/Si1-xGex heterostructures in pulsed magnetic fields

Solid state communications, 1995-10, Vol.96 (2), p.57-60

1995

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Classical and weak localization processes in a tunable ballistic-electron cavity

Physical review. B, Condensed matter, 1995-04, Vol.51 (15), p.9801-9805

1995

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Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Physica. E, Low-dimensional systems & nanostructures, 2000-02, Vol.6 (1-4), p.297-300

2000

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Low-temperature transport and photoconductivity response of high mobility Si-SiGe heterostructures in strong magnetic fields

Physica. B, Condensed matter, 1996, Vol.216 (3), p.388-392

1996

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Microwave and transport studies of the magnetically-induced insulating phase of bilayer hole systems

Physica. E, Low-dimensional systems & nanostructures, 2002, Vol.12 (1), p.296-299

2002

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High-field photoluminescence in GaAs single heterojunctions: Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition

Physica. B, Condensed matter, 1993, Vol.184 (1), p.56-65

1993

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Integer quantum Hall effect in a high electron density Al0.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well

Journal of applied physics, 1998-03, Vol.83 (6), p.3144-3147

1998

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Surface acoustic wave comparison of single and double layer AlGaAs/GaAs 2D hole systems

Physica. B, Condensed matter, 2002-05, Vol.316, p.219-222

2002

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The acoustoelectric effect in double layer AlGaAs/GaAs 2D hole systems

Physica. E, Low-dimensional systems & nanostructures, 2002, Vol.12 (1), p.462-465

2002

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Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures

Microelectronic engineering, 2000-06, Vol.53 (1-4), p.205-208

2000

Volltextzugriff (PDF)

Time-resolved magneto-photoluminescence measurements of the integer QHE, fractional QHE and extreme quantum limit

Surface science, 1994-03, Vol.305 (1), p.42-49

1994

Volltextzugriff (PDF)

Magneto-optical probe of two-dimensional electron liquid and solid phases

Physical review. B, Condensed matter, 1992-09, Vol.46 (12), p.7957-7960

1992

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A tunable ballistic electron cavity exhibiting geometry-induced weak localisation

Superlattices and microstructures, 1994, Vol.16 (3), p.317-320

1994

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Australian national pulsed magnet laboratory for condensed matter physics research

Physica. B, Condensed matter, 1994-07, Vol.201, p.565-571

1994

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The extreme quantum regime of 2D electron and hole systems

Physica. B, Condensed matter, 1994-07, Vol.201, p.301-314

1994

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Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect

Microelectronics, 2005-03, Vol.36 (3-6), p.469-471

2005

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Schottky gating high mobility Si/Si sub(1-x)Ge sub(x) 2D electron systems

Thin solid films, 2000-07, Vol.369 (1), p.316-319

2000

Volltextzugriff (PDF)

Inverted modulation-doped n-type Si/Si sub(0.77)Ge sub(0.23) heterostructures

Microelectronic engineering, 2000-06, Vol.53 (1), p.205-208

2000

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Inter-edge-mode scattering in a high-mobility strained silicon two-dimensional electron system

Si/SiGe n-type inverted modulation doping using ion implantation

Weak localisation and inter-quantum Hall effect transitions in a 2D Si/SiGe hole system

Schottky gating high mobility Si/Si1-xGex 2D electron systems

Si/Si1-xGex heterostructure field effect transistors fabricated using a low thermal budget CMOS process

Surface acoustic wave study of a double layer AlGaAs/GaAs 2D hole system

The use of wide ballistic cavities to investigate local weak localization processes induced by geometric scattering

FQHE states of high mobility n-Si/Si1-xGex heterostructures in pulsed magnetic fields

Classical and weak localization processes in a tunable ballistic-electron cavity

Universality at a quantum Hall–Hall insulator transition in a Si/Si0.87Ge0.13 2D hole system

Low-temperature transport and photoconductivity response of high mobility Si-SiGe heterostructures in strong magnetic fields

Microwave and transport studies of the magnetically-induced insulating phase of bilayer hole systems

High-field photoluminescence in GaAs single heterojunctions: Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition

Integer quantum Hall effect in a high electron density Al0.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well

Surface acoustic wave comparison of single and double layer AlGaAs/GaAs 2D hole systems

The acoustoelectric effect in double layer AlGaAs/GaAs 2D hole systems

Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures

Time-resolved magneto-photoluminescence measurements of the integer QHE, fractional QHE and extreme quantum limit

Magneto-optical probe of two-dimensional electron liquid and solid phases

A tunable ballistic electron cavity exhibiting geometry-induced weak localisation

Australian national pulsed magnet laboratory for condensed matter physics research

The extreme quantum regime of 2D electron and hole systems

Effects of Zeeman spin splitting on the modular symmetry in the quantum Hall effect

Schottky gating high mobility Si/Si sub(1-x)Ge sub(x) 2D electron systems

Inverted modulation-doped n-type Si/Si sub(0.77)Ge sub(0.23) heterostructures

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