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Selective growth of GaAs by organometallic vapor phase epitaxy at atmospheric pressure

Applied physics letters, 1991-01, Vol.58 (2), p.128-130

1991

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Application of organometallic vapor phase epitaxy on patterned substrates for a new monolithic laser waveguide butt coupling technique

Applied physics letters, 1989-05, Vol.54 (19), p.1857-1858

1989

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In situ metalorganic vapor phase epitaxy control of GaAs/AlAs Bragg reflectors by laser reflectometry at 514 nm

Applied physics letters, 1993-12, Vol.63 (25), p.3479-3481

1993

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Optical bistability at 980 nm in a strained InGaAs/GaAs multiple quantum well microcavity with resonant periodic nonlinearity

Applied physics letters, 1993-05, Vol.62 (20), p.2489-2491

1993

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In situ metalorganic growth control of GaAlAs thick layers using 1.32 μm laser reflectometry

Journal of crystal growth, 1995-02, Vol.147 (3), p.251-255

1995

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In situ control of the growth of GaAs / GaAlAs structures in a metalorganic vapour phase epitaxy reactor by laser reflectometry

Journal of crystal growth, 1994-12, Vol.145 (1), p.61-67

1994

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Autodoping of GaAs grown by organometallic vapor phase epitaxy on silicon substrates

Applied physics letters, 1989-06, Vol.54 (24), p.2402-2404

1989

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Performance characteristics of strained layer InGaAs/GaAs broad area and ridge waveguide lasers

Electronics letters, 1991-05, Vol.27 (10), p.865-866

1991

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Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs

Journal of crystal growth, 1991, Vol.107 (1), p.926-931

1991

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MOCVD n-type doping of GaAs and GaAlAs using silicon and selenium and fabrication of double heterostructure bipolar transistor

Journal of crystal growth, 1984-09, Vol.68 (1), p.453-460

1984

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In-situ thickness measurement of MOVPE grown GaAs GaAlAs by laser reflectometry

Microelectronic engineering, 1994-08, Vol.25 (2), p.229-234

1994

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Selective growth of GaAs and GaAlAs by Cl-assisted OMVPE at atmospheric pressure

Journal of electronic materials, 1992-03, Vol.21 (3), p.281-288

1992

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Focused ion beam machining of mirror facets of a monolithically integrated GaAs/GaAlAs double heterojunction (DH) laser and its optical waveguide

Microelectronic engineering, 1990, Vol.11 (1), p.413-416

1990

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Optical quality improvement of MOVPE grown GaAlAs/GaAs double heterostructures on silicon substrates

Journal of crystal growth, 1991, Vol.107 (1), p.483-488

1991

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Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressure

Journal of electronic materials, 1984-05, Vol.13 (3), p.603-620

1984

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Selective MOCVD epitaxy for optoelectronic devices

Journal of crystal growth, 1981-01, Vol.55 (1), p.229-234

1981

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Low threshold and low dispersion MOCVD/LPE buried-heterostructure GaAs/GaAlAs lasers

Electronics letters, 1984-10, Vol.20 (21), p.857-859

1984

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Low-threshold GaAs/GaAlAs buried heterostructure laser with an ion-beam-etched quarter ring cavity

Electronics letters, 1987-05, Vol.23 (10), p.485-487

1987

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Design and fabrication process of GaAsGaAlAs ECL inverters

Physica B + C, 1985-01, Vol.129 (1), p.361-365

1985

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FOLDED AND UNFOLDED ACOUSTIC MODES IN LONG-PERIOD GaAs-AlAs SUPERLATTICES. A COMBINED RAMAN-BRILLOUIN STUDY

Le Journal de Physique Colloques, 1987-11, Vol.48 (C5), p.C5-C5-576

1987

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MOCVD growth and characterization by Raman scattering, x-ray diffraction and Auger spectroscopy of short period GaAs/AlAs and GaAs/Ga1−xAlxAs superlattices

Journal of crystal growth, 1986-09, Vol.77 (1-3), p.546-552

1986

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Metalorganic InP and InxGa1-xAsyP1-y on InP epitaxy at atmospheric pressure

Journal of electronic materials, 1984, Vol.13 (3), p.603-620

1984

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In situ control of the growth of GaAs/GaAlAs structures in a nmetalorganic vapour phase epitaxy reactor by laser reflectometry

Journal of crystal growth, 1994, Vol.145 (1-4), p.61-67

1994

Volltextzugriff (PDF)

Growth and characterization of low threshold, continuous-wave-operated ridge waveguide strained layer InGaAs/GaAs single-quantum-well lasers

Materials science & engineering. B, Solid-state materials for advanced technology, 1991-07, Vol.9 (1), p.351-354

1991

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GaAs/GaAlAs RIB waveguide grating filters for λ = 1.5μm

Electronics letters, 1987-06, Vol.23 (12), p.622-624

1987

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Selective growth of GaAs by organometallic vapor phase epitaxy at atmospheric pressure

Application of organometallic vapor phase epitaxy on patterned substrates for a new monolithic laser waveguide butt coupling technique

In situ metalorganic vapor phase epitaxy control of GaAs/AlAs Bragg reflectors by laser reflectometry at 514 nm

Optical bistability at 980 nm in a strained InGaAs/GaAs multiple quantum well microcavity with resonant periodic nonlinearity

In situ metalorganic growth control of GaAlAs thick layers using 1.32 μm laser reflectometry

In situ control of the growth of GaAs / GaAlAs structures in a metalorganic vapour phase epitaxy reactor by laser reflectometry

Autodoping of GaAs grown by organometallic vapor phase epitaxy on silicon substrates

Performance characteristics of strained layer InGaAs/GaAs broad area and ridge waveguide lasers

Electrical and structural characterization of GaAs on InP grown by OMCVD; application to GaAs MESFETs

MOCVD n-type doping of GaAs and GaAlAs using silicon and selenium and fabrication of double heterostructure bipolar transistor

In-situ thickness measurement of MOVPE grown GaAs GaAlAs by laser reflectometry

Selective growth of GaAs and GaAlAs by Cl-assisted OMVPE at atmospheric pressure

Focused ion beam machining of mirror facets of a monolithically integrated GaAs/GaAlAs double heterojunction (DH) laser and its optical waveguide

Optical quality improvement of MOVPE grown GaAlAs/GaAs double heterostructures on silicon substrates

Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressure

Selective MOCVD epitaxy for optoelectronic devices

Low threshold and low dispersion MOCVD/LPE buried-heterostructure GaAs/GaAlAs lasers

Low-threshold GaAs/GaAlAs buried heterostructure laser with an ion-beam-etched quarter ring cavity

Design and fabrication process of GaAsGaAlAs ECL inverters

FOLDED AND UNFOLDED ACOUSTIC MODES IN LONG-PERIOD GaAs-AlAs SUPERLATTICES. A COMBINED RAMAN-BRILLOUIN STUDY

MOCVD growth and characterization by Raman scattering, x-ray diffraction and Auger spectroscopy of short period GaAs/AlAs and GaAs/Ga1−xAlxAs superlattices

Metalorganic InP and InxGa1-xAsyP1-y on InP epitaxy at atmospheric pressure

In situ control of the growth of GaAs/GaAlAs structures in a nmetalorganic vapour phase epitaxy reactor by laser reflectometry

Growth and characterization of low threshold, continuous-wave-operated ridge waveguide strained layer InGaAs/GaAs single-quantum-well lasers

GaAs/GaAlAs RIB waveguide grating filters for λ = 1.5μm

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