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Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

Nanoscale, 2016, Vol.8 (19), p.9997-10003

2016

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Silica coating enhances the stability of inorganic perovskite nanocrystals for efficient and stable down-conversion in white light-emitting devices

Nanoscale, 2018-11, Vol.10 (43), p.20131-20139

2018

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High-efficiency and air-stable photodetectors based on lead-free double perovskite Cs2AgBiBr6 thin films

Journal of materials chemistry. C, Materials for optical and electronic devices, 2018, Vol.6 (3), p.7982-7988

2018

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High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

Nanoscale, 2016-05, Vol.8 (19), p.135-142

2016

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A (4,6)-c copper–organic framework constructed from triazole-inserted dicarboxylate linker with CO2 selective adsorption

CrystEngComm, 2024-02, Vol.26 (9), p.1204-1208

2024

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Near infrared electroluminescence from n-InN/p-GaN light-emitting diodes

Applied physics letters, 2012-03, Vol.100 (10), p.103504-103504-3

2012

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Polynuclear Rare-Earth Cluster-Directed Self-Assembly of Highly Porous Zeolite-like Metal–Organic Frameworks with Methane Storage Property

Inorganic chemistry, 2023-11, Vol.62 (44), p.18014-18019

2023

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Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Japanese Journal of Applied Physics, 2018-07, Vol.57 (7), p.70307

2018

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Near-infrared random lasing realized in a perovskite CH3NH3PbI3 thin film

Journal of materials chemistry. C, Materials for optical and electronic devices, 2016-01, Vol.4 (36), p.8373-8379

2016

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Photoluminescence performance enhancement of ZnO/MgO heterostructured nanowires and their applications in ultraviolet laser diodes

Physical chemistry chemical physics : PCCP, 2015-06, Vol.17 (21), p.13813-13820

2015

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Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications

CrystEngComm, 2015-01, Vol.17 (1), p.40-49

2015

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ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD

Chinese physics letters, 2010-12, Vol.27 (12), p.128504

2010

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Electrically Pumped Ultraviolet Random Lasing from p-ZnO：As Based on p-ZnO/N-GaN Heterojunction

Chinese physics letters, 2014-05, Vol.31 (5), p.179-182

张源涛夏晓川伍斌史志锋杨帆杨小天张宝林杜国同

2014

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Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

Chinese physics letters, 2017-08, Vol.34 (9), p.97301

2017

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Study on high-temperature and high-pressure measurement by using metal-coated FBG

Microwave and optical technology letters, 2008-05, Vol.50 (5), p.1138-1140

2008

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Properties of p-NiO/n-GaN Diodes Fabricated by Magnetron Sputtering

Chinese physics letters, 2012-10, Vol.29 (10), p.107304-1-107304-3

2012

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The growth of ZnO on stainless steel foils by MOCVD and its application in light emitting devices

Physical chemistry chemical physics : PCCP, 2016-02, Vol.18 (7), p.5614-5621

2016

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Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction

Nanoscale, 2013-06, Vol.5 (11), p.58-585

2013

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Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method

Chinese physics letters, 2011-10, Vol.28 (10), p.108101-1-108101-4, Article 108101

2011

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Effect of Au/Ni/4H–SiC Schottky junction thermal stability on performance of alpha particle detection

Chinese physics B, 2018-08, Vol.27 (8), p.87304

2018

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Crystalline, Optical and Electrical Properties of NiZnO Thin Films Fabricated by MOCVD

Chinese physics letters, 2011-07, Vol.28 (7), p.77301-1-077301-4

2011

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Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

Journal of applied physics, 2017-06, Vol.121 (23)

2017

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Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes

Applied physics letters, 2012-07, Vol.101 (5), p.53503

2012

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Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

Chinese physics letters, 2014-02, Vol.31 (2), p.97-100, Article 27101

王东盛张克雄梁红伟宋世巍杨德超申人升柳阳夏晓川骆英民杜国同

2014

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Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

Chinese physics B, 2018-02, Vol.27 (2), p.588-593

2018

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Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

Silica coating enhances the stability of inorganic perovskite nanocrystals for efficient and stable down-conversion in white light-emitting devices

High-efficiency and air-stable photodetectors based on lead-free double perovskite Cs2AgBiBr6 thin films

High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

A (4,6)-c copper–organic framework constructed from triazole-inserted dicarboxylate linker with CO2 selective adsorption

Near infrared electroluminescence from n-InN/p-GaN light-emitting diodes

Polynuclear Rare-Earth Cluster-Directed Self-Assembly of Highly Porous Zeolite-like Metal–Organic Frameworks with Methane Storage Property

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Near-infrared random lasing realized in a perovskite CH3NH3PbI3 thin film

Photoluminescence performance enhancement of ZnO/MgO heterostructured nanowires and their applications in ultraviolet laser diodes

Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications

ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD

Electrically Pumped Ultraviolet Random Lasing from p-ZnO：As Based on p-ZnO/N-GaN Heterojunction

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

Study on high-temperature and high-pressure measurement by using metal-coated FBG

Properties of p-NiO/n-GaN Diodes Fabricated by Magnetron Sputtering

The growth of ZnO on stainless steel foils by MOCVD and its application in light emitting devices

Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction

Ultraviolet-Visible Electroluminescence of a p-ZnO:As/n-Si Device Formed by the GaAs Interlayer Doping Method

Effect of Au/Ni/4H–SiC Schottky junction thermal stability on performance of alpha particle detection

Crystalline, Optical and Electrical Properties of NiZnO Thin Films Fabricated by MOCVD

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes

Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes

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