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Metastable boron active concentrations in Si using flash assisted solid phase epitaxy

Journal of applied physics, 2004-12, Vol.96 (12), p.7357-7360

2004

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Defect evolution of low energy, amorphizing germanium implants in silicon

Journal of applied physics, 2003-03, Vol.93 (5), p.2449-2452

2003

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Characterization of ultra-shallow p+-n junctions formed by plasma doping with BF3 and N2 plasmas

Materials chemistry and physics, 1998-07, Vol.54 (1-3), p.37-43

1998

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Enhanced Boron Diffusion in Amorphous Silicon

MRS proceedings, 2004, Vol.810, Article C10.3

2004

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Low resistance, low-leakage ultrashallow p+-junction formation using millisecond flash anneals

IEEE transactions on electron devices, 2005-07, Vol.52 (7), p.1610-1615

2005

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Ion Implantation Technology - 92

1, 1993

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Effect of fluorine on the diffusion of boron in ion implanted Si

Applied physics letters, 1998-08, Vol.73 (9), p.1263-1265

1998

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Low resistance, low-leakage ultrashallow p/sup %2B/-junction formation using millisecond flash anneals

IEEE transactions on electron devices, 2005-07, Vol.52 (7), p.1610-1615

2005

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Ultra-shallow junctions produced by plasma doping and flash lamp annealing

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-12, Vol.114, p.358-361

2004

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Low resistance, low-leakage ultrashallow p super(+)-junction formation using millisecond flash anneals

IEEE transactions on electron devices, 2005-01, Vol.52 (7)

2005

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Simulation of Rapid Thermal Annealed Boron Ultra-Shallow Junctions in Inert and Oxidizing Ambient

MRS proceedings, 1998, Vol.525, Article 237

1998

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Effects of “fast” rapid thermal anneals on sub-keV boron and BF2 ion implants

Journal of electronic materials, 1999-12, Vol.28 (12), p.1340-1344

1999

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Secondary ion mass spectrometry analysis of implanted and rapid thermal processing annealed wafers for sub-100 nanometer technology

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-01, Vol.22 (1), p.346-349

2004

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Characterizing implant behavior during flash RTP by means of backside diagnostics

10th IEEE International Conference of Advanced Thermal Processing of Semiconductors, 2002, p.99-105

2002

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Boron Activation During Solid Phase Epitaxial Regrowth

MRS proceedings, 2000, Vol.610, Article B10.2

2000

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Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation

MRS proceedings, 2000, Vol.610, Article B4.2

2000

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Understanding and Modeling Ramp Rate Effects on Shallow Junction Formation

MRS proceedings, 2000, Vol.610, Article B4.8

2000

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Defect Reduction in Laser Thermal Processing

MRS proceedings, 2000, Vol.610, Article B10.3

2000

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The Effect of Impurities on Diffusion and Activation of ion Implanted Boron in Silicon

MRS proceedings, 2000, Vol.610, Article B5.8

2000

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Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF2+, and As+ ion implanted junctions

Journal of electronic materials, 1998-12, Vol.27 (12), p.1296

1998

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Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants

Thin solid films, 1997-10, Vol.308-309, p.562-569

1997

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Varying implant dose rate for defect reduction in laser thermal processing

Materials science in semiconductor processing, 2001-08, Vol.4 (4), p.339-343

2001

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RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants

Journal of electronic materials, 1998-12, Vol.27 (12), p.1291-1295

1998

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Depth Profiles of Medium Energy Phosphorus Implants into Silicon

MRS proceedings, 1995, Vol.396, Article 51

1995

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Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants

MRS proceedings, 1999, Vol.568, Article 9

1999

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Metastable boron active concentrations in Si using flash assisted solid phase epitaxy

Defect evolution of low energy, amorphizing germanium implants in silicon

Characterization of ultra-shallow p+-n junctions formed by plasma doping with BF3 and N2 plasmas

Enhanced Boron Diffusion in Amorphous Silicon

Low resistance, low-leakage ultrashallow p+-junction formation using millisecond flash anneals

Ion Implantation Technology - 92

Effect of fluorine on the diffusion of boron in ion implanted Si

Low resistance, low-leakage ultrashallow p/sup %2B/-junction formation using millisecond flash anneals

Ultra-shallow junctions produced by plasma doping and flash lamp annealing

Low resistance, low-leakage ultrashallow p super(+)-junction formation using millisecond flash anneals

Simulation of Rapid Thermal Annealed Boron Ultra-Shallow Junctions in Inert and Oxidizing Ambient

Effects of “fast” rapid thermal anneals on sub-keV boron and BF2 ion implants

Secondary ion mass spectrometry analysis of implanted and rapid thermal processing annealed wafers for sub-100 nanometer technology

Characterizing implant behavior during flash RTP by means of backside diagnostics

Boron Activation During Solid Phase Epitaxial Regrowth

Junction Depth Reduction of ion Implanted Boron in Silicon Through Fluorine ion Implantation

Understanding and Modeling Ramp Rate Effects on Shallow Junction Formation

Defect Reduction in Laser Thermal Processing

The Effect of Impurities on Diffusion and Activation of ion Implanted Boron in Silicon

Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF2+, and As+ ion implanted junctions

Dose-rate effects on the formation of ultra-shallow junctions with low-energy B+ and BF2+ ion implants

Varying implant dose rate for defect reduction in laser thermal processing

RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants

Depth Profiles of Medium Energy Phosphorus Implants into Silicon

Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants

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