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Single versus dual Kirschner wires for closed reduction and intramedullary nailing of displaced fractures of the fifth metacarpal neck (1-2 KiWi): a randomized controlled trial

The bone & joint journal, 2019-10, Vol.101-B (10), p.1263-1271

2019

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Influence of different seed materials on multi-crystalline silicon ingot properties

Journal of crystal growth, 2016-01, Vol.434, p.88-95

2016

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Accuracy of simple plain radiographic signs and measures to diagnose acute scapholunate ligament injuries of the wrist

European radiology, 2015-12, Vol.25 (12), p.3488-3498

2015

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What Is the Diagnostic Accuracy of Flat-panel Cone-beam CT Arthrography for Diagnosis of Scapholunate Ligament Tears?

Clinical orthopaedics and related research, 2021-01, Vol.479 (1), p.151-160

2021

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The impact of nitrogen on the defect aggregation in silicon

Journal of crystal growth, 2001-06, Vol.226 (1), p.19-30

2001

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Körperliche Erziehung und Schule

Doernberger, E

2021

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Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations

Journal of crystal growth, 2003-03, Vol.250 (1), p.203-208

2003

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Defect engineering of Czochralski single-crystal silicon

Materials science & engineering. R, Reports : a review journal, 2000-07, Vol.28 (5), p.149-198

2000

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Defects in Silicon Crystals and Their Impact on DRAM Device Characteristics

Journal of the Electrochemical Society, 2002-04, Vol.149 (4), p.G226

2002

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Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields

Journal of crystal growth, 2001-08, Vol.230 (1), p.92-99

2001

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Modeling of transient point defect dynamics in Czochralski silicon crystals

Journal of crystal growth, 2001-08, Vol.230 (1), p.291-299

2001

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Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals

Journal of crystal growth, 2001-08, Vol.230 (1), p.22-29

2001

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Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals

Journal of crystal growth, 1997-10, Vol.180 (3-4), p.343-352

1997

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Analysis of magnetic field effect on 3D melt flow in CZ Si growth

Journal of crystal growth, 2003-03, Vol.250 (1), p.183-188

2003

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Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results

Journal of crystal growth, 1997-10, Vol.180 (3-4), p.461-467

1997

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Bulk properties of very large diameter silicon single crystals

Journal of crystal growth, 1999-03, Vol.198, p.390-398

1999

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Silicon crystals for future requirements of 300 mm wafers

Journal of crystal growth, 2001-07, Vol.229 (1), p.11-16

2001

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Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection

Materials science in semiconductor processing, 2002-08, Vol.5 (4), p.369-373

2002

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Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth

Journal of crystal growth, 2002-04, Vol.237, p.1757-1761

2002

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Structure and properties of hydrated La(III), Nd(III) and Er(III) methanesulfonates

Journal of alloys and compounds, 2001-07, Vol.323, p.39-44

2001

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Oxygen distribution in silicon melt during a standard Czochralski process studied by sensor measurements and comparison to numerical simulation

Journal of crystal growth, 1999-03, Vol.198, p.409-413

1999

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Influence of Residual Point Defect Supersaturation on the Formation of Grown‐In Oxide Precipitate Nuclei in CZ‐Si

Journal of the Electrochemical Society, 1998-05, Vol.145 (5), p.L75-L78

1998

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Transient and quasi-stationary simulation of heat and mass transfer in Czochralski silicon crystal growth

Crystal research and technology (1979), 2003-06, Vol.38 (6), p.499-505

2003

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Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface

Microelectronic engineering, 2001-05, Vol.56 (1), p.139-142

2001

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Erratum to “The impact of nitrogen on the defect aggregation in silicon”: [J. Crystal Growth 226 (2001) 19–30]

Journal of crystal growth, 2002-04, Vol.240 (1), p.330-330

2002

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Single versus dual Kirschner wires for closed reduction and intramedullary nailing of displaced fractures of the fifth metacarpal neck (1-2 KiWi): a randomized controlled trial

Influence of different seed materials on multi-crystalline silicon ingot properties

Accuracy of simple plain radiographic signs and measures to diagnose acute scapholunate ligament injuries of the wrist

What Is the Diagnostic Accuracy of Flat-panel Cone-beam CT Arthrography for Diagnosis of Scapholunate Ligament Tears?

The impact of nitrogen on the defect aggregation in silicon

Körperliche Erziehung und Schule

Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations

Defect engineering of Czochralski single-crystal silicon

Defects in Silicon Crystals and Their Impact on DRAM Device Characteristics

Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields

Modeling of transient point defect dynamics in Czochralski silicon crystals

Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals

Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals

Analysis of magnetic field effect on 3D melt flow in CZ Si growth

Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results

Bulk properties of very large diameter silicon single crystals

Silicon crystals for future requirements of 300 mm wafers

Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection

Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth

Structure and properties of hydrated La(III), Nd(III) and Er(III) methanesulfonates

Oxygen distribution in silicon melt during a standard Czochralski process studied by sensor measurements and comparison to numerical simulation

Influence of Residual Point Defect Supersaturation on the Formation of Grown‐In Oxide Precipitate Nuclei in CZ‐Si

Transient and quasi-stationary simulation of heat and mass transfer in Czochralski silicon crystal growth

Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface

Erratum to “The impact of nitrogen on the defect aggregation in silicon”: [J. Crystal Growth 226 (2001) 19–30]

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